Fabrication of metal-semiconductor-metal (MSM) UV photodetectors with Al0.16Ga0.84N/GaN heterqstructures

Dong Wook Kim, Kyong Seok Chea, Yong Jo Park, In-Hwan Lee, Cheul Ro Lee

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Metal-semiconductor-metal (MSM) ultraviolet photodetectors were successfully fabricated and characterized. Al0.16Ga 0.84N/GaN heterostructures with HT-AlN interlayer whose thicknesses ranged from 30 to 70 nm were grown on sapphire (0001) to achieve high performance MSM UV photodetectors by MOCVD. The HT-AlN interlayer with a thickness of 30 nm showed the best results in terms of quality, so we fabricated and characterized MSM UV photodetectors with an interdigitated finger pattern using the Al0.16Ga0.84N/GaN heterostructure incorporating this layer. Their responsivity was 0.2 A/W under -10 V bias at a sharp cut-off of 330 nm. A fast response time of 15.4 ns was achieved, and the dark current of 3.1 p A/cm2 under zero bias shows that low leakage current was achieved.

Original languageEnglish
Pages (from-to)2686-2690
Number of pages5
JournalPhysica Status Solidi (A) Applied Research
Volume201
Issue number12
DOIs
Publication statusPublished - 2004 Sep 1
Externally publishedYes

Fingerprint

Photodetectors
photometers
Metals
Semiconductor materials
Fabrication
fabrication
metals
Heterojunctions
interlayers
Aluminum Oxide
Dark currents
Metallorganic chemical vapor deposition
dark current
Sapphire
Leakage currents
metalorganic chemical vapor deposition
sapphire
leakage
cut-off

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Fabrication of metal-semiconductor-metal (MSM) UV photodetectors with Al0.16Ga0.84N/GaN heterqstructures. / Kim, Dong Wook; Chea, Kyong Seok; Park, Yong Jo; Lee, In-Hwan; Lee, Cheul Ro.

In: Physica Status Solidi (A) Applied Research, Vol. 201, No. 12, 01.09.2004, p. 2686-2690.

Research output: Contribution to journalArticle

Kim, Dong Wook ; Chea, Kyong Seok ; Park, Yong Jo ; Lee, In-Hwan ; Lee, Cheul Ro. / Fabrication of metal-semiconductor-metal (MSM) UV photodetectors with Al0.16Ga0.84N/GaN heterqstructures. In: Physica Status Solidi (A) Applied Research. 2004 ; Vol. 201, No. 12. pp. 2686-2690.
@article{18602f70abcb4bc696db745360a17151,
title = "Fabrication of metal-semiconductor-metal (MSM) UV photodetectors with Al0.16Ga0.84N/GaN heterqstructures",
abstract = "Metal-semiconductor-metal (MSM) ultraviolet photodetectors were successfully fabricated and characterized. Al0.16Ga 0.84N/GaN heterostructures with HT-AlN interlayer whose thicknesses ranged from 30 to 70 nm were grown on sapphire (0001) to achieve high performance MSM UV photodetectors by MOCVD. The HT-AlN interlayer with a thickness of 30 nm showed the best results in terms of quality, so we fabricated and characterized MSM UV photodetectors with an interdigitated finger pattern using the Al0.16Ga0.84N/GaN heterostructure incorporating this layer. Their responsivity was 0.2 A/W under -10 V bias at a sharp cut-off of 330 nm. A fast response time of 15.4 ns was achieved, and the dark current of 3.1 p A/cm2 under zero bias shows that low leakage current was achieved.",
author = "Kim, {Dong Wook} and Chea, {Kyong Seok} and Park, {Yong Jo} and In-Hwan Lee and Lee, {Cheul Ro}",
year = "2004",
month = "9",
day = "1",
doi = "10.1002/pssa.200405048",
language = "English",
volume = "201",
pages = "2686--2690",
journal = "Physica Status Solidi (A) Applied Research",
issn = "0031-8965",
publisher = "Wiley-VCH Verlag",
number = "12",

}

TY - JOUR

T1 - Fabrication of metal-semiconductor-metal (MSM) UV photodetectors with Al0.16Ga0.84N/GaN heterqstructures

AU - Kim, Dong Wook

AU - Chea, Kyong Seok

AU - Park, Yong Jo

AU - Lee, In-Hwan

AU - Lee, Cheul Ro

PY - 2004/9/1

Y1 - 2004/9/1

N2 - Metal-semiconductor-metal (MSM) ultraviolet photodetectors were successfully fabricated and characterized. Al0.16Ga 0.84N/GaN heterostructures with HT-AlN interlayer whose thicknesses ranged from 30 to 70 nm were grown on sapphire (0001) to achieve high performance MSM UV photodetectors by MOCVD. The HT-AlN interlayer with a thickness of 30 nm showed the best results in terms of quality, so we fabricated and characterized MSM UV photodetectors with an interdigitated finger pattern using the Al0.16Ga0.84N/GaN heterostructure incorporating this layer. Their responsivity was 0.2 A/W under -10 V bias at a sharp cut-off of 330 nm. A fast response time of 15.4 ns was achieved, and the dark current of 3.1 p A/cm2 under zero bias shows that low leakage current was achieved.

AB - Metal-semiconductor-metal (MSM) ultraviolet photodetectors were successfully fabricated and characterized. Al0.16Ga 0.84N/GaN heterostructures with HT-AlN interlayer whose thicknesses ranged from 30 to 70 nm were grown on sapphire (0001) to achieve high performance MSM UV photodetectors by MOCVD. The HT-AlN interlayer with a thickness of 30 nm showed the best results in terms of quality, so we fabricated and characterized MSM UV photodetectors with an interdigitated finger pattern using the Al0.16Ga0.84N/GaN heterostructure incorporating this layer. Their responsivity was 0.2 A/W under -10 V bias at a sharp cut-off of 330 nm. A fast response time of 15.4 ns was achieved, and the dark current of 3.1 p A/cm2 under zero bias shows that low leakage current was achieved.

UR - http://www.scopus.com/inward/record.url?scp=6344282385&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=6344282385&partnerID=8YFLogxK

U2 - 10.1002/pssa.200405048

DO - 10.1002/pssa.200405048

M3 - Article

AN - SCOPUS:6344282385

VL - 201

SP - 2686

EP - 2690

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

IS - 12

ER -