Fabrication of MFISFETs with Pt/SrBi2Ta2O 9/Y2O3Si gate structure by developing an etch-stop process

Sun Il Shim, Young Suk Kwon, Seong Il Kim, Yong Tae Kim, Jung Ho Park

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A metal-ferroelectric-insulator-semiconductor field-effect transistor (MFISFET) was fabricated with an etch-stop process based on the selectivity between SrBi2Ta2O9 (SBT) and Y 2O3. Depending on the selectivity with various Ar/Cl 2 gas mixture, we could find the acceptable thickness of Y 2O3 for a successful etch-stop process. The electrical characteristics of the MFISFET fabricated with the developed etch-stop process showed no damage of the silicon surface of source/drain regions, resulting in good ferroelectric memory characteristics and programmable operation.

Original languageEnglish
Pages (from-to)R65-R68
JournalPhysica Status Solidi (A) Applied Research
Volume201
Issue number10
DOIs
Publication statusPublished - 2004 Aug

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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