Fabrication of MFISFETs with Pt/SrBi2Ta2O 9/Y2O3Si gate structure by developing an etch-stop process

Sun Il Shim, Young Suk Kwon, Seong Il Kim, Yong Tae Kim, Jung ho Park

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A metal-ferroelectric-insulator-semiconductor field-effect transistor (MFISFET) was fabricated with an etch-stop process based on the selectivity between SrBi2Ta2O9 (SBT) and Y 2O3. Depending on the selectivity with various Ar/Cl 2 gas mixture, we could find the acceptable thickness of Y 2O3 for a successful etch-stop process. The electrical characteristics of the MFISFET fabricated with the developed etch-stop process showed no damage of the silicon surface of source/drain regions, resulting in good ferroelectric memory characteristics and programmable operation.

Original languageEnglish
JournalPhysica Status Solidi (A) Applied Research
Volume201
Issue number10
DOIs
Publication statusPublished - 2004 Aug 1

Fingerprint

Ferroelectric materials
field effect transistors
selectivity
insulators
Field effect transistors
Fabrication
fabrication
Metals
metals
Semiconductor materials
gas mixtures
Silicon
damage
Gas mixtures
silicon
Data storage equipment

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Fabrication of MFISFETs with Pt/SrBi2Ta2O 9/Y2O3Si gate structure by developing an etch-stop process. / Shim, Sun Il; Kwon, Young Suk; Kim, Seong Il; Kim, Yong Tae; Park, Jung ho.

In: Physica Status Solidi (A) Applied Research, Vol. 201, No. 10, 01.08.2004.

Research output: Contribution to journalArticle

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