A metal-ferroelectric-insulator-semiconductor field-effect transistor (MFISFET) was fabricated with an etch-stop process based on the selectivity between SrBi2Ta2O9 (SBT) and Y 2O3. Depending on the selectivity with various Ar/Cl 2 gas mixture, we could find the acceptable thickness of Y 2O3 for a successful etch-stop process. The electrical characteristics of the MFISFET fabricated with the developed etch-stop process showed no damage of the silicon surface of source/drain regions, resulting in good ferroelectric memory characteristics and programmable operation.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics