Fabrication of multi-bit crossbar circuits at sub-50 nm half-pitch by using UV-based nanoimprint lithography

Gun Young Jung, Wei Wu, Heon Lee, S. Y. Wang, William M. Tong, R. Stanley Williams

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Nanoimprinting lithography was initiated as an alternative way to achieve nanoscale structures with high throughput and low cost. We have developed a UV-nanoimprint process to fabricate 34×34 crossbar circuits at 50 nm half-pitch (equivalent to a bit density of 10 Gbit/cm2) with single-layer structure. We devised a technique that exploits the opposite free energies of the mold and substrate surfaces to produce a very uniform resist film without any trap air. As the pitch size decreases, lift-off process with single-layer structure was difficult to define metal wires. Sixty-six by sixty-six crossbar structures with a half-pitch of 30 nm (equivalent to a bit density of 30 Gbit/cm2) were produced with bi-layer structure.

Original languageEnglish
Pages (from-to)565-570
Number of pages6
JournalJournal of Photopolymer Science and Technology
Volume18
Issue number5
DOIs
Publication statusPublished - 2005

Keywords

  • Crossbar
  • Drop method
  • Lithography
  • Nanoimprint
  • UV process

ASJC Scopus subject areas

  • Polymers and Plastics
  • Organic Chemistry
  • Materials Chemistry

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