Fabrication of multi-level switching phase change nano-pillar device using InSe/GeSbTe stacked structure

Sung Hoon Hong, Heon Lee, Yunjung Choi, Young Kook Lee

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The InSe/GeSbTe stacked phase change materials were investigated at nano-scale for multi-level switching with a large sensing margin and fast switching. The 200 nm nano-pillar devices of InSe material and InSe/GeSbTe materials were fabricated using NIL, and its electrical properties were characterized using conducting AFM system, that was connected to a pulse generator and a voltage source. In case of InSe based nano-pillar device, it was evaluated that the fast switching speed (<100 ns) and large difference of resistance on-off ratio (>10,000) and exhibited only bi-level switching characteristics. In case of the InSe/GeSbTe PCMs structure exhibited three levels of resistance state with a few hundred times of difference between them with 100 ns reset pulse.

Original languageEnglish
JournalCurrent Applied Physics
Volume11
Issue number5 SUPPL.
DOIs
Publication statusPublished - 2011 Sep 1

Fingerprint

Fabrication
fabrication
phase change materials
Pulse generators
pulse generators
Phase change materials
Pulse code modulation
margins
Electric properties
electrical properties
atomic force microscopy
conduction
Electric potential
electric potential
pulses

Keywords

  • Conductive AFM
  • InSe
  • InSe/GeSbTe
  • Multi-level switching
  • Nanoimprint lithography

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Fabrication of multi-level switching phase change nano-pillar device using InSe/GeSbTe stacked structure. / Hong, Sung Hoon; Lee, Heon; Choi, Yunjung; Lee, Young Kook.

In: Current Applied Physics, Vol. 11, No. 5 SUPPL., 01.09.2011.

Research output: Contribution to journalArticle

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