Abstract
We demonstrate the fabrication of metal and semiconductor nanodot arrays on Si by pulsed laser deposition using an anodic alumina membrane as a mask. A Hexagonal-close-packed nanopore membrane mask was fabricated by the anodic oxidation of aluminum sheet. Pulsed laser deposition of Ag, Ni, ZnO, and Er-doped Si (Si:Er) nanodots was performed on a Si substrate to which an alumina membrane mask adheres by van der Waals interaction. Highly ordered arrays of Ag, Ni, ZnO, and Si:Er nanodots with average diameters ranging from 55 to 86 nm and a periodicity of ∼100 nm were obtained. Also, the time-resolved images of laser-produced plasma plumes were analyzed to examine the dynamical properties of the ejected materials.
| Original language | English |
|---|---|
| Pages (from-to) | 7793-7797 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 43 |
| Issue number | 11 A |
| DOIs | |
| Publication status | Published - 2004 Nov |
Keywords
- Anodic aluminum oxide
- Nanodot array
- Pulsed laser deposition
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Nam, W., Seo, H., Park, S. C., Bae, C. H., Nam, S. H., Park, S. M., & Ha, J. S. (2004). Fabrication of nanodot arrays on Si by pulsed laser deposition using anodic aluminum oxide nanopore membrane as mask. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 43(11 A), 7793-7797. https://doi.org/10.1143/JJAP.43.7793