Fabrication of nanometer-scale carbon nanotube field-effect transistors on flexible and transparent substrate

Tae Geun Kim, Jongseung Hwang, Jeongmin Kang, Sangsig Kim, Sung Woo Hwang

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We have successfully fabricated nanometer-scale carbon nanotube field effect transistors (CNT FETs) on a flexible and transparent substrate by electron-beam lithography. The measured currentvoltage data show good hole conduction FET characteristics, and the on/off ratio of the current is more than 102. The conductance (as well as current) systematically decreases with the increase of the strain, suggesting that the bending of the substrate still affects the deformation condition of the short channel CNT FETs.

Original languageEnglish
Pages (from-to)1393-1396
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Issue number2
Publication statusPublished - 2011 Feb 1



  • Carbon nanotube
  • Electron-beam lithography
  • Field-effect transistor
  • Flexible
  • Nanometer-scale
  • Transport characteristics

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

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