Fabrication of nanometer-scale pillar structures by using nanosphere lithography

Ji Won Yang, Jae In Sim, Ho Myoung An, Tae Geun Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

In this work, we have successfully fabricated a periodic array of nanostructures on the GaN, sapphire and silicon substrates by using a nanosphere lithography. First, a polystyrene nanosphere monolayer with a diameter of 500 nm was spin-coated on the substrates; then, an oxygen plasma was applied to the monolayer using a reactive ion etching system to make spacings among the nanospheres so that one could control the on/off ratio of the pitch and the shape of the nanoscale pillar structures. Next, evenly-spaced polystyrene nanospheres were used as a mask for inductively coupled plasma reactive ion etching to make nanoscale pillar structures of different shapes and depths on the substrates. These experimental results are expected to offer a milestone for the application of nanostructures to various semiconductor devices.

Original languageEnglish
Pages (from-to)994-997
Number of pages4
JournalJournal of the Korean Physical Society
Volume58
Issue number42
DOIs
Publication statusPublished - 2011 Apr 4

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lithography
fabrication
polystyrene
etching
oxygen plasma
semiconductor devices
ions
sapphire
masks
spacing
silicon

Keywords

  • Gallium nitride (GaN)
  • Light-emitting diode (LED)
  • Nanosphere lithography (NSLl)

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Fabrication of nanometer-scale pillar structures by using nanosphere lithography. / Yang, Ji Won; Sim, Jae In; An, Ho Myoung; Kim, Tae Geun.

In: Journal of the Korean Physical Society, Vol. 58, No. 42, 04.04.2011, p. 994-997.

Research output: Contribution to journalArticle

Yang, Ji Won ; Sim, Jae In ; An, Ho Myoung ; Kim, Tae Geun. / Fabrication of nanometer-scale pillar structures by using nanosphere lithography. In: Journal of the Korean Physical Society. 2011 ; Vol. 58, No. 42. pp. 994-997.
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