Fabrication of optical sources using InGaAs quantum dots grown by atomic layer epitaxy

Du Chang Heo, Il Ki Han, Jin Dong Song, Won Jun Choi, Jung Il Lee, Jeong Yong Lee, Joo In Lee, Jichai Jeong

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We report that the characteristics and the device applications of InGaAs quantum dots (QD's) grown by using the atomic layer epitaxy (ALE) technique. The measured average diameter and height of the QD's are about 45 nm and 7 nm, respectively. The typical density of QD's is 1.4 × 1010/cm 2 for a single layer. Optical sources, like laser diodes (LD's) and superluminescent diodes (SLD's), are fabricated on epi-structures with an active medium consisting of InGaAs QD's. In the case of LD's, the lasing wavelength is about 1.02 μm, which reflects lasing at high-energy states. The internal quantum efficiency and the internal loss is about 66 % and 45 cm-1, respectively, In the case of SLD's. the output power is about 0.9 W, and the spectral bandwidth is 93 nm. Procedures to further improve device performances are also discussed.

Original languageEnglish
Pages (from-to)154-159
Number of pages6
JournalJournal of the Korean Physical Society
Volume43
Issue number1
Publication statusPublished - 2003 Jul 1

Keywords

  • Atomic layer epitaxy
  • Laser diodes
  • Quantum dots
  • Superluminescent diodes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Heo, D. C., Han, I. K., Song, J. D., Choi, W. J., Lee, J. I., Lee, J. Y., Lee, J. I., & Jeong, J. (2003). Fabrication of optical sources using InGaAs quantum dots grown by atomic layer epitaxy. Journal of the Korean Physical Society, 43(1), 154-159.