Fabrication of oxidation-free contacts to nanopatterned Permalloy structures

Hye Young Kim, Kang Ho Lee, Gyu-Tae Kim, Woun Kang, Kyoung Jin Lee

Research output: Contribution to journalArticle

Abstract

A simple way to avoid the oxidation layer on the surface of Permalloy by improving the fabrication process was investigated. Electron-beam lithography (EBL) was used to define patterns with a very high resolution positive tone resist, ZEP 520A-7 for high dry-etch resistance, on a prepatterned silicon substrate including contact pads. Reactive ion etching (RIE) was carried out at 50 mTorr vacuum with a 100 W rf power and 50 SCCM of CH4 gas flow rate for 100s. A Piranha etch is required to remove the residual resist because the degenerated resist is not easy to remove with a solvent after the RIE process. A 4:1 mixture of sulfuric acid (H2SO4) and hydrogen peroxide (H2O2) was prepared at 110 °C. With an optimal alignment on the predefined grooves, the gold electrodes could be selectively deposited by the liftoff process with a controlled height or width. The results show that embedded structure of the electrodes minimizes the perturbation to the magnetic metallic channel with a good electrical contact.

Original languageEnglish
Pages (from-to)2487-2489
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume27
Issue number6
DOIs
Publication statusPublished - 2009 Dec 1

Fingerprint

Reactive ion etching
Permalloys (trademark)
etching
Fabrication
Oxidation
oxidation
Electrodes
fabrication
electrodes
Electron beam lithography
sulfuric acid
hydrogen peroxide
Sulfuric acid
Hydrogen peroxide
grooves
gas flow
Flow of gases
electric contacts
ions
lithography

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Fabrication of oxidation-free contacts to nanopatterned Permalloy structures. / Kim, Hye Young; Lee, Kang Ho; Kim, Gyu-Tae; Kang, Woun; Lee, Kyoung Jin.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, No. 6, 01.12.2009, p. 2487-2489.

Research output: Contribution to journalArticle

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