Fabrication of oxide-based nano-patterned sapphire substrate to improve the efficiency of GaN-based of LED

Joong Yeon Cho, Jin Seung Kim, Yang Doo Kim, Hyuk Jin Cha, Heon Lee

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

In this study, an oxide-based nano-patterned sapphire substrate (ONPSS) was used as the substrate for a nitride-based light emitting diode (LED) in order to enhance the LED's internal quantum efficiency and light extraction efficiency. The ONPSS was fabricated by a direct spin-on-glass printing technique, which is simple, easy, and relatively low-cost technique. Conventional PSSs are generally fabricated by photolithography and a sapphire etching process. However, the process reported here, it is possible to fabricate an oxide-based PSS without the sapphire etching process. After a GaN-based blue LED device was grown on the ONPSS, we measured the photoluminescence and electroluminescence intensity to confirm the light extraction efficiency and internal quantum efficiency of the LED. Compared to a GaN LED grown on an unpatterned sapphire, the ONPSS-based LED exhibited a 100% increase in light output power without electrical degradation.

Original languageEnglish
Article number02BA04
JournalJapanese Journal of Applied Physics
Volume54
Issue number2
DOIs
Publication statusPublished - 2015 Feb 1

Fingerprint

Sapphire
Light emitting diodes
sapphire
light emitting diodes
Fabrication
fabrication
Oxides
oxides
Substrates
Quantum efficiency
quantum efficiency
Etching
etching
Electroluminescence
Photolithography
photolithography
Nitrides
printing
electroluminescence
nitrides

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Fabrication of oxide-based nano-patterned sapphire substrate to improve the efficiency of GaN-based of LED. / Cho, Joong Yeon; Kim, Jin Seung; Kim, Yang Doo; Cha, Hyuk Jin; Lee, Heon.

In: Japanese Journal of Applied Physics, Vol. 54, No. 2, 02BA04, 01.02.2015.

Research output: Contribution to journalArticle

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