We present the fabrication and the characteristic analysis of SLS (sequential lateral solidification) poly-Si thin-film transistors (TFT's). An initially prepared amorphous silicon film was crystallized by using the SLS process and the characteristics of device were analyzed by varying the channel length of TFT's. The fabricated p-type SLS poly-Si TFT's (width / length = 20 μm / 2.5 μm) showed a mobility of 105.2 cm2/V-sec, a threshold voltage of -3.21 V, a sub-threshold slope of 0.324 V/dec, an off-current of 9.19×10-11 A at VDS = -5 V, and an on/off current ratio of 9.68×106 at VDS = -5 V. In particular, the threshold voltage of the fabricated p-type SLS poly-Si TFT's improved from -4.59 V to -3.2 V as the channel length improved from 8 μm to 2.5 μm.
|Number of pages||5|
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2002 Dec|
- Sequential lateral solidification(SLS)
- Thin film transistor(TFT)
ASJC Scopus subject areas
- Physics and Astronomy(all)