Fabrication of p-type poly-Si thin-film transistors using sequential lateral solidification and analysis of the device characteristics for various channel lengths

Youngwoon Kho, James Jungho Pak, Jaeyoung Oh, Donghwan Kim, Won Kyu Park, Myoung Su Yang

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We present the fabrication and the characteristic analysis of SLS (sequential lateral solidification) poly-Si thin-film transistors (TFT's). An initially prepared amorphous silicon film was crystallized by using the SLS process and the characteristics of device were analyzed by varying the channel length of TFT's. The fabricated p-type SLS poly-Si TFT's (width / length = 20 μm / 2.5 μm) showed a mobility of 105.2 cm 2/V-sec, a threshold voltage of -3.21 V, a sub-threshold slope of 0.324 V/dec, an off-current of 9.19×10 -11 A at V DS = -5 V, and an on/off current ratio of 9.68×10 6 at V DS = -5 V. In particular, the threshold voltage of the fabricated p-type SLS poly-Si TFT's improved from -4.59 V to -3.2 V as the channel length improved from 8 μm to 2.5 μm.

Original languageEnglish
Pages (from-to)1068-1072
Number of pages5
JournalJournal of the Korean Physical Society
Volume41
Issue number6
Publication statusPublished - 2002 Dec 1

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solidification
transistors
fabrication
thin films
threshold voltage
silicon films
amorphous silicon
slopes
thresholds

Keywords

  • Fabrication
  • Polysilicon
  • Sequential lateral solidification(SLS)
  • Thin film transistor(TFT)

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Fabrication of p-type poly-Si thin-film transistors using sequential lateral solidification and analysis of the device characteristics for various channel lengths. / Kho, Youngwoon; Pak, James Jungho; Oh, Jaeyoung; Kim, Donghwan; Park, Won Kyu; Yang, Myoung Su.

In: Journal of the Korean Physical Society, Vol. 41, No. 6, 01.12.2002, p. 1068-1072.

Research output: Contribution to journalArticle

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abstract = "We present the fabrication and the characteristic analysis of SLS (sequential lateral solidification) poly-Si thin-film transistors (TFT's). An initially prepared amorphous silicon film was crystallized by using the SLS process and the characteristics of device were analyzed by varying the channel length of TFT's. The fabricated p-type SLS poly-Si TFT's (width / length = 20 μm / 2.5 μm) showed a mobility of 105.2 cm 2/V-sec, a threshold voltage of -3.21 V, a sub-threshold slope of 0.324 V/dec, an off-current of 9.19×10 -11 A at V DS = -5 V, and an on/off current ratio of 9.68×10 6 at V DS = -5 V. In particular, the threshold voltage of the fabricated p-type SLS poly-Si TFT's improved from -4.59 V to -3.2 V as the channel length improved from 8 μm to 2.5 μm.",
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AU - Kho, Youngwoon

AU - Pak, James Jungho

AU - Oh, Jaeyoung

AU - Kim, Donghwan

AU - Park, Won Kyu

AU - Yang, Myoung Su

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N2 - We present the fabrication and the characteristic analysis of SLS (sequential lateral solidification) poly-Si thin-film transistors (TFT's). An initially prepared amorphous silicon film was crystallized by using the SLS process and the characteristics of device were analyzed by varying the channel length of TFT's. The fabricated p-type SLS poly-Si TFT's (width / length = 20 μm / 2.5 μm) showed a mobility of 105.2 cm 2/V-sec, a threshold voltage of -3.21 V, a sub-threshold slope of 0.324 V/dec, an off-current of 9.19×10 -11 A at V DS = -5 V, and an on/off current ratio of 9.68×10 6 at V DS = -5 V. In particular, the threshold voltage of the fabricated p-type SLS poly-Si TFT's improved from -4.59 V to -3.2 V as the channel length improved from 8 μm to 2.5 μm.

AB - We present the fabrication and the characteristic analysis of SLS (sequential lateral solidification) poly-Si thin-film transistors (TFT's). An initially prepared amorphous silicon film was crystallized by using the SLS process and the characteristics of device were analyzed by varying the channel length of TFT's. The fabricated p-type SLS poly-Si TFT's (width / length = 20 μm / 2.5 μm) showed a mobility of 105.2 cm 2/V-sec, a threshold voltage of -3.21 V, a sub-threshold slope of 0.324 V/dec, an off-current of 9.19×10 -11 A at V DS = -5 V, and an on/off current ratio of 9.68×10 6 at V DS = -5 V. In particular, the threshold voltage of the fabricated p-type SLS poly-Si TFT's improved from -4.59 V to -3.2 V as the channel length improved from 8 μm to 2.5 μm.

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