Fabrication of quantum dot transistors incorporating a single self-assembled quantum dot

S. K. Jung, S. W. Hwang, D. Ahn, Jung ho Park, Yong Kim, E. K. Kim

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We report on the fabrication and the characterization of quantum dot transistors incorporating a single self-assembled quantum dot. The current-voltage characteristics exhibit clear staircase structures at room temperature. They are attributed to electron tunneling through the quantized energy levels of a single quantum dot.

Original languageEnglish
Pages (from-to)430-434
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume7
Issue number3
DOIs
Publication statusPublished - 2000 May 1

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this