We report on the fabrication and the characterization of quantum dot transistors incorporating a single self-assembled quantum dot. The current-voltage characteristics exhibit clear staircase structures at room temperature. They are attributed to electron tunneling through the quantized energy levels of a single quantum dot.
|Number of pages||5|
|Journal||Physica E: Low-Dimensional Systems and Nanostructures|
|Publication status||Published - 2000 May 1|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics