Fabrication of quantum dot transistors incorporating a single self-assembled quantum dot

S. K. Jung, S. W. Hwang, D. Ahn, J. H. Park, Yong Kim, E. K. Kim

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

We report on the fabrication and the characterization of quantum dot transistors incorporating a single self-assembled quantum dot. The current-voltage characteristics exhibit clear staircase structures at room temperature. They are attributed to electron tunneling through the quantized energy levels of a single quantum dot.

Original languageEnglish
Pages (from-to)430-434
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume7
Issue number3
DOIs
Publication statusPublished - 2000 May
EventMSS9: The 9th International Conference on Modulated Semiconductor Structures - Fukuoka, Jpn
Duration: 1999 Jul 121999 Jul 16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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