Abstract
Aside from having very good optical properties, the good ARC needs passivation effect (Si dangling bonds reduced) and thermal stability (during the firing of screen-printed metal contact). SiNx and SiO2 are the most popular films as ARC and have been applied on the silicon solar cell for a long time. In order to prevent disadvantage like thermal degradation and combine the benefits (low reflectance, and good passivation) of the SiNx and SiO 2, the ARC was modified to incorporate a thermally grown thin SiO2 layer beneath the PECVD SiNx. The SiO2/SiNx double layer ARC has a better output performance in particular Voc and FF than SiNx single layer. The Si/SiO2 interface is grown into the silicon crystal at a relatively high temperature, and the subsequent very effective hydrogenation of dangling bond interface states during the SiNx deposition. The gain of FF is predicted due to fewer hole defects in the SiO2/SiNx double ARC layer. The surface passivation by thermally grown SiO2 and PECVD SiNx double ARC is more effective than the SiNx single layer. Adding only a short oxidation process, we can have a +0.4% improved conversion efficiency of screen-printed mc-Si solar cell.
| Original language | English |
|---|---|
| Title of host publication | Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 |
| Pages | 3604-3607 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 2010 Dec 20 |
| Externally published | Yes |
| Event | 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI, United States Duration: 2010 Jun 20 → 2010 Jun 25 |
Publication series
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Other
| Other | 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 |
|---|---|
| Country | United States |
| City | Honolulu, HI |
| Period | 10/6/20 → 10/6/25 |
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ASJC Scopus subject areas
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering
Cite this
Fabrication of screen-printed multi-crystalline silicon solar cells exceeding 16% efficiency using double layer anti-reflective coatings. / Shim, Ji Myung; Kim, Ii Hwan; Oh, Dong Joon; Cho, Kyeong Yeon; Lee, Eun Joo; Lee, Hyun Woo; Choi, Jun Young; Kim, Ji Sun; Shin, Jeong Eun; Lee, Soo Hong; Lee, Haeseok.
Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010. 2010. p. 3604-3607 5617335 (Conference Record of the IEEE Photovoltaic Specialists Conference).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Fabrication of screen-printed multi-crystalline silicon solar cells exceeding 16% efficiency using double layer anti-reflective coatings
AU - Shim, Ji Myung
AU - Kim, Ii Hwan
AU - Oh, Dong Joon
AU - Cho, Kyeong Yeon
AU - Lee, Eun Joo
AU - Lee, Hyun Woo
AU - Choi, Jun Young
AU - Kim, Ji Sun
AU - Shin, Jeong Eun
AU - Lee, Soo Hong
AU - Lee, Haeseok
PY - 2010/12/20
Y1 - 2010/12/20
N2 - Aside from having very good optical properties, the good ARC needs passivation effect (Si dangling bonds reduced) and thermal stability (during the firing of screen-printed metal contact). SiNx and SiO2 are the most popular films as ARC and have been applied on the silicon solar cell for a long time. In order to prevent disadvantage like thermal degradation and combine the benefits (low reflectance, and good passivation) of the SiNx and SiO 2, the ARC was modified to incorporate a thermally grown thin SiO2 layer beneath the PECVD SiNx. The SiO2/SiNx double layer ARC has a better output performance in particular Voc and FF than SiNx single layer. The Si/SiO2 interface is grown into the silicon crystal at a relatively high temperature, and the subsequent very effective hydrogenation of dangling bond interface states during the SiNx deposition. The gain of FF is predicted due to fewer hole defects in the SiO2/SiNx double ARC layer. The surface passivation by thermally grown SiO2 and PECVD SiNx double ARC is more effective than the SiNx single layer. Adding only a short oxidation process, we can have a +0.4% improved conversion efficiency of screen-printed mc-Si solar cell.
AB - Aside from having very good optical properties, the good ARC needs passivation effect (Si dangling bonds reduced) and thermal stability (during the firing of screen-printed metal contact). SiNx and SiO2 are the most popular films as ARC and have been applied on the silicon solar cell for a long time. In order to prevent disadvantage like thermal degradation and combine the benefits (low reflectance, and good passivation) of the SiNx and SiO 2, the ARC was modified to incorporate a thermally grown thin SiO2 layer beneath the PECVD SiNx. The SiO2/SiNx double layer ARC has a better output performance in particular Voc and FF than SiNx single layer. The Si/SiO2 interface is grown into the silicon crystal at a relatively high temperature, and the subsequent very effective hydrogenation of dangling bond interface states during the SiNx deposition. The gain of FF is predicted due to fewer hole defects in the SiO2/SiNx double ARC layer. The surface passivation by thermally grown SiO2 and PECVD SiNx double ARC is more effective than the SiNx single layer. Adding only a short oxidation process, we can have a +0.4% improved conversion efficiency of screen-printed mc-Si solar cell.
UR - http://www.scopus.com/inward/record.url?scp=78650078505&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78650078505&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2010.5617335
DO - 10.1109/PVSC.2010.5617335
M3 - Conference contribution
SN - 9781424458912
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 3604
EP - 3607
BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
ER -