Fabrication of self-aligned silicon field emitters coated with diamond-like carbon

Sanjo Lee, Sunnup Lee, Sungwoon Lee, D. Jeon, Kwang Ryeol Lee, Byeong Kwon Ju, Myung Hwan Oh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A silicon emitter array was fabricated on an n-type wafer using conventional dry etch and sharpening oxidation method. The diamond-like carbon (DLC) film was deposited onto the silicon tips using radio frequency plasma-assisted chemical vapor deposition. The silicon tips were cleaned either by dipping in buffered hydrofluoric acid (HF) for a minute or argon ion bombarding in the deposition chamber. HF cleaning did not result in uniform DLC coating, while argon bombarding increased the aspect ratio of the tips due to the angle dependence etching. Furthermore, DLC films adhere better on the argon bombardment tips than on the HF-treated silicon tips producing samples which emitted current at the onset voltage as low as 20 V.

Original languageEnglish
Title of host publicationProceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages283-287
Number of pages5
Publication statusPublished - 1996 Dec 1
Externally publishedYes
EventProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia
Duration: 1996 Jul 71996 Jul 12

Other

OtherProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC
CitySt.Petersburg, Russia
Period96/7/796/7/12

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ASJC Scopus subject areas

  • Surfaces and Interfaces

Cite this

Lee, S., Lee, S., Lee, S., Jeon, D., Lee, K. R., Ju, B. K., & Oh, M. H. (1996). Fabrication of self-aligned silicon field emitters coated with diamond-like carbon. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC (pp. 283-287). Piscataway, NJ, United States: IEEE.