Fabrication of Silicon Nano-Crystals via a Hemispherically Grained Si Process

Tae Woong Kang, Jonghyurk Park, Sunglyul Maeng, Moon Gue Jang, Seong Jae Lee, Young Ho Yang, Woo Jae Hur, Kyoungwan Park, Jeong Sook Ha

Research output: Contribution to journalArticle

Abstract

We propose a new fabrication method for silicon nano-crystals with a high density and uniform sizes via a hemispherically grained Si (HSG-Si) process. The growth reaction was investigated by varying the thickness of the substrate's amorphous Si layer, as well as the growth temperature and the reaction time. The resultant size, density, and crystallinity of Si dots were examined by using scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (TEM). The size and the density of silicon nano-crystals were observed to be greatly influenced by the thickness of the substrate's amorphous silicon film. The thinner the substrate Si layer was, the smaller and the higher the average size and the density of Si nano-crystals were, respectively. Using a 5-nm-thick amorphous Si film, silicon nano-crystals with a size of 7 nm and a density of 2.6 × 1011/cm2 were successfully fabricated.

Original languageEnglish
Pages (from-to)898-902
Number of pages5
JournalJournal of the Korean Physical Society
Volume43
Issue number5 II
DOIs
Publication statusPublished - 2003 Nov

Keywords

  • Growth mechanism
  • HSG-Si process
  • Nano-crystal
  • Si

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Kang, T. W., Park, J., Maeng, S., Jang, M. G., Lee, S. J., Yang, Y. H., Hur, W. J., Park, K., & Ha, J. S. (2003). Fabrication of Silicon Nano-Crystals via a Hemispherically Grained Si Process. Journal of the Korean Physical Society, 43(5 II), 898-902. https://doi.org/10.3938/jkps.43.898