Fabrication of Silicon Nano-Crystals via a Hemispherically Grained Si Process

Tae Woong Kang, Jonghyurk Park, Sunglyul Maeng, Moon Gue Jang, Seong Jae Lee, Young Ho Yang, Woo Jae Hur, Kyoungwan Park, Jeong Sook Ha

Research output: Contribution to journalArticle

Abstract

We propose a new fabrication method for silicon nano-crystals with a high density and uniform sizes via a hemispherically grained Si (HSG-Si) process. The growth reaction was investigated by varying the thickness of the substrate's amorphous Si layer, as well as the growth temperature and the reaction time. The resultant size, density, and crystallinity of Si dots were examined by using scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (TEM). The size and the density of silicon nano-crystals were observed to be greatly influenced by the thickness of the substrate's amorphous silicon film. The thinner the substrate Si layer was, the smaller and the higher the average size and the density of Si nano-crystals were, respectively. Using a 5-nm-thick amorphous Si film, silicon nano-crystals with a size of 7 nm and a density of 2.6 × 10 11/cm 2 were successfully fabricated.

Original languageEnglish
Pages (from-to)898-902
Number of pages5
JournalJournal of the Korean Physical Society
Volume43
Issue number5 II
Publication statusPublished - 2003 Nov 1

Fingerprint

fabrication
silicon
crystals
silicon films
reaction time
amorphous silicon
crystallinity
transmission electron microscopy
scanning electron microscopy
high resolution
temperature

Keywords

  • Growth mechanism
  • HSG-Si process
  • Nano-crystal
  • Si

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Kang, T. W., Park, J., Maeng, S., Jang, M. G., Lee, S. J., Yang, Y. H., ... Ha, J. S. (2003). Fabrication of Silicon Nano-Crystals via a Hemispherically Grained Si Process. Journal of the Korean Physical Society, 43(5 II), 898-902.

Fabrication of Silicon Nano-Crystals via a Hemispherically Grained Si Process. / Kang, Tae Woong; Park, Jonghyurk; Maeng, Sunglyul; Jang, Moon Gue; Lee, Seong Jae; Yang, Young Ho; Hur, Woo Jae; Park, Kyoungwan; Ha, Jeong Sook.

In: Journal of the Korean Physical Society, Vol. 43, No. 5 II, 01.11.2003, p. 898-902.

Research output: Contribution to journalArticle

Kang, TW, Park, J, Maeng, S, Jang, MG, Lee, SJ, Yang, YH, Hur, WJ, Park, K & Ha, JS 2003, 'Fabrication of Silicon Nano-Crystals via a Hemispherically Grained Si Process', Journal of the Korean Physical Society, vol. 43, no. 5 II, pp. 898-902.
Kang TW, Park J, Maeng S, Jang MG, Lee SJ, Yang YH et al. Fabrication of Silicon Nano-Crystals via a Hemispherically Grained Si Process. Journal of the Korean Physical Society. 2003 Nov 1;43(5 II):898-902.
Kang, Tae Woong ; Park, Jonghyurk ; Maeng, Sunglyul ; Jang, Moon Gue ; Lee, Seong Jae ; Yang, Young Ho ; Hur, Woo Jae ; Park, Kyoungwan ; Ha, Jeong Sook. / Fabrication of Silicon Nano-Crystals via a Hemispherically Grained Si Process. In: Journal of the Korean Physical Society. 2003 ; Vol. 43, No. 5 II. pp. 898-902.
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