Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography

Kyeong Jae Byeon, Joong Yeon Cho, Jinseung Kim, Hyoungwon Park, Heon Lee

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

SiNx-based photonic crystal (PhC) patterns were fabricated on the ITO electrode layer of a GaN-based light-emitting diode (LED) device on a patterned sapphire substrate (PSS) by a UV nanoimprint lithography process in order to improve the light extraction of the device. A three-dimensional finite-difference time-domain simulation confirmed that the light extraction of a GaN LED structure on a PSS is enhanced when SiNx PhC patterns are formed on the ITO top layer. From the I-V characteristics, the electrical properties of patterned LED devices with SiNx-based PhC were not degraded compared to the unpatterned LED device, since plasma etching of the p-GaN or the ITO layers was not involved in the patterning process. Additionally, the patterned LED devices with SiNx-based PhCs showed 19%-increased electroluminescence intensity compared with the unpatterned LED device at 445 nm wavelength when a 20 mA current is driven.

Original languageEnglish
Pages (from-to)11423-11432
Number of pages10
JournalOptics Express
Volume20
Issue number10
DOIs
Publication statusPublished - 2012 May 7

Fingerprint

sapphire
light emitting diodes
lithography
photonics
fabrication
ITO (semiconductors)
crystals
plasma etching
electroluminescence
electrical properties
electrodes
wavelengths
simulation

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography. / Byeon, Kyeong Jae; Cho, Joong Yeon; Kim, Jinseung; Park, Hyoungwon; Lee, Heon.

In: Optics Express, Vol. 20, No. 10, 07.05.2012, p. 11423-11432.

Research output: Contribution to journalArticle

Byeon, Kyeong Jae ; Cho, Joong Yeon ; Kim, Jinseung ; Park, Hyoungwon ; Lee, Heon. / Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography. In: Optics Express. 2012 ; Vol. 20, No. 10. pp. 11423-11432.
@article{49fad89008af4e859dc2cd48987f91f6,
title = "Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography",
abstract = "SiNx-based photonic crystal (PhC) patterns were fabricated on the ITO electrode layer of a GaN-based light-emitting diode (LED) device on a patterned sapphire substrate (PSS) by a UV nanoimprint lithography process in order to improve the light extraction of the device. A three-dimensional finite-difference time-domain simulation confirmed that the light extraction of a GaN LED structure on a PSS is enhanced when SiNx PhC patterns are formed on the ITO top layer. From the I-V characteristics, the electrical properties of patterned LED devices with SiNx-based PhC were not degraded compared to the unpatterned LED device, since plasma etching of the p-GaN or the ITO layers was not involved in the patterning process. Additionally, the patterned LED devices with SiNx-based PhCs showed 19{\%}-increased electroluminescence intensity compared with the unpatterned LED device at 445 nm wavelength when a 20 mA current is driven.",
author = "Byeon, {Kyeong Jae} and Cho, {Joong Yeon} and Jinseung Kim and Hyoungwon Park and Heon Lee",
year = "2012",
month = "5",
day = "7",
doi = "10.1364/OE.20.011423",
language = "English",
volume = "20",
pages = "11423--11432",
journal = "Optics Express",
issn = "1094-4087",
publisher = "The Optical Society",
number = "10",

}

TY - JOUR

T1 - Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography

AU - Byeon, Kyeong Jae

AU - Cho, Joong Yeon

AU - Kim, Jinseung

AU - Park, Hyoungwon

AU - Lee, Heon

PY - 2012/5/7

Y1 - 2012/5/7

N2 - SiNx-based photonic crystal (PhC) patterns were fabricated on the ITO electrode layer of a GaN-based light-emitting diode (LED) device on a patterned sapphire substrate (PSS) by a UV nanoimprint lithography process in order to improve the light extraction of the device. A three-dimensional finite-difference time-domain simulation confirmed that the light extraction of a GaN LED structure on a PSS is enhanced when SiNx PhC patterns are formed on the ITO top layer. From the I-V characteristics, the electrical properties of patterned LED devices with SiNx-based PhC were not degraded compared to the unpatterned LED device, since plasma etching of the p-GaN or the ITO layers was not involved in the patterning process. Additionally, the patterned LED devices with SiNx-based PhCs showed 19%-increased electroluminescence intensity compared with the unpatterned LED device at 445 nm wavelength when a 20 mA current is driven.

AB - SiNx-based photonic crystal (PhC) patterns were fabricated on the ITO electrode layer of a GaN-based light-emitting diode (LED) device on a patterned sapphire substrate (PSS) by a UV nanoimprint lithography process in order to improve the light extraction of the device. A three-dimensional finite-difference time-domain simulation confirmed that the light extraction of a GaN LED structure on a PSS is enhanced when SiNx PhC patterns are formed on the ITO top layer. From the I-V characteristics, the electrical properties of patterned LED devices with SiNx-based PhC were not degraded compared to the unpatterned LED device, since plasma etching of the p-GaN or the ITO layers was not involved in the patterning process. Additionally, the patterned LED devices with SiNx-based PhCs showed 19%-increased electroluminescence intensity compared with the unpatterned LED device at 445 nm wavelength when a 20 mA current is driven.

UR - http://www.scopus.com/inward/record.url?scp=84861140849&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861140849&partnerID=8YFLogxK

U2 - 10.1364/OE.20.011423

DO - 10.1364/OE.20.011423

M3 - Article

C2 - 22565762

AN - SCOPUS:84861140849

VL - 20

SP - 11423

EP - 11432

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 10

ER -