Abstract
SiNx-based photonic crystal (PhC) patterns were fabricated on the ITO electrode layer of a GaN-based light-emitting diode (LED) device on a patterned sapphire substrate (PSS) by a UV nanoimprint lithography process in order to improve the light extraction of the device. A three-dimensional finite-difference time-domain simulation confirmed that the light extraction of a GaN LED structure on a PSS is enhanced when SiNx PhC patterns are formed on the ITO top layer. From the I-V characteristics, the electrical properties of patterned LED devices with SiNx-based PhC were not degraded compared to the unpatterned LED device, since plasma etching of the p-GaN or the ITO layers was not involved in the patterning process. Additionally, the patterned LED devices with SiNx-based PhCs showed 19%-increased electroluminescence intensity compared with the unpatterned LED device at 445 nm wavelength when a 20 mA current is driven.
| Original language | English |
|---|---|
| Pages (from-to) | 11423-11432 |
| Number of pages | 10 |
| Journal | Optics Express |
| Volume | 20 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2012 May 7 |
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ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
Cite this
Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography. / Byeon, Kyeong Jae; Cho, Joong Yeon; Kim, Jinseung; Park, Hyoungwon; Lee, Heon.
In: Optics Express, Vol. 20, No. 10, 07.05.2012, p. 11423-11432.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography
AU - Byeon, Kyeong Jae
AU - Cho, Joong Yeon
AU - Kim, Jinseung
AU - Park, Hyoungwon
AU - Lee, Heon
PY - 2012/5/7
Y1 - 2012/5/7
N2 - SiNx-based photonic crystal (PhC) patterns were fabricated on the ITO electrode layer of a GaN-based light-emitting diode (LED) device on a patterned sapphire substrate (PSS) by a UV nanoimprint lithography process in order to improve the light extraction of the device. A three-dimensional finite-difference time-domain simulation confirmed that the light extraction of a GaN LED structure on a PSS is enhanced when SiNx PhC patterns are formed on the ITO top layer. From the I-V characteristics, the electrical properties of patterned LED devices with SiNx-based PhC were not degraded compared to the unpatterned LED device, since plasma etching of the p-GaN or the ITO layers was not involved in the patterning process. Additionally, the patterned LED devices with SiNx-based PhCs showed 19%-increased electroluminescence intensity compared with the unpatterned LED device at 445 nm wavelength when a 20 mA current is driven.
AB - SiNx-based photonic crystal (PhC) patterns were fabricated on the ITO electrode layer of a GaN-based light-emitting diode (LED) device on a patterned sapphire substrate (PSS) by a UV nanoimprint lithography process in order to improve the light extraction of the device. A three-dimensional finite-difference time-domain simulation confirmed that the light extraction of a GaN LED structure on a PSS is enhanced when SiNx PhC patterns are formed on the ITO top layer. From the I-V characteristics, the electrical properties of patterned LED devices with SiNx-based PhC were not degraded compared to the unpatterned LED device, since plasma etching of the p-GaN or the ITO layers was not involved in the patterning process. Additionally, the patterned LED devices with SiNx-based PhCs showed 19%-increased electroluminescence intensity compared with the unpatterned LED device at 445 nm wavelength when a 20 mA current is driven.
UR - http://www.scopus.com/inward/record.url?scp=84861140849&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84861140849&partnerID=8YFLogxK
U2 - 10.1364/OE.20.011423
DO - 10.1364/OE.20.011423
M3 - Article
C2 - 22565762
AN - SCOPUS:84861140849
VL - 20
SP - 11423
EP - 11432
JO - Optics Express
JF - Optics Express
SN - 1094-4087
IS - 10
ER -