Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography

Kyeong Jae Byeon, Joong Yeon Cho, Jinseung Kim, Hyoungwon Park, Heon Lee

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

SiNx-based photonic crystal (PhC) patterns were fabricated on the ITO electrode layer of a GaN-based light-emitting diode (LED) device on a patterned sapphire substrate (PSS) by a UV nanoimprint lithography process in order to improve the light extraction of the device. A three-dimensional finite-difference time-domain simulation confirmed that the light extraction of a GaN LED structure on a PSS is enhanced when SiNx PhC patterns are formed on the ITO top layer. From the I-V characteristics, the electrical properties of patterned LED devices with SiNx-based PhC were not degraded compared to the unpatterned LED device, since plasma etching of the p-GaN or the ITO layers was not involved in the patterning process. Additionally, the patterned LED devices with SiNx-based PhCs showed 19%-increased electroluminescence intensity compared with the unpatterned LED device at 445 nm wavelength when a 20 mA current is driven.

Original languageEnglish
Pages (from-to)11423-11432
Number of pages10
JournalOptics Express
Volume20
Issue number10
DOIs
Publication statusPublished - 2012 May 7

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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