Fabrication of solution-processed SnO₂–Based flexible ReRAM using laser-induced graphene transferred onto PDMS

In this paper, we are reporting the fabrication of a solution-processed SnO₂-based flexible ReRAM using laser-induced graphene (LIG) transferred onto polydimethylsiloxane (PDMS). The fabricated ReRAM showed forming-free and self-compliance bipolar resistive switching characteristics when the applied voltage was swept from 0 V to 4.5 V for SET and from 0 V to - 4.5 V for RESET. The device operates as a filamentary type ReRAM and its conduction mechanism analysis indicates that the space charge limited conduction (SCLC) is dominant mechanism in the analog resistive switching of the fabricated device. For the reliability analysis, 100 cycles of endurance test and 1.8 × 10³ s of retention test were performed. The flexibility of the fabricated ReRAM device was demonstrated by showing that the resistive switching characteristics were still obtained after bending 200 times repeatedly down to 1 mm radius. Our study suggests the new fabrication process of a solution-processed flexible ReRAM and proves its potential applications to flexible electronics.