Abstract
Electrical properties of piezoelectric thick films with controlled microstructure were investigated. In order to enhance the electromechanical properties (e.g. d31, d33) of a thick film by control of its microstructure, a mixed powder, referred to as BNP, consisting of both nano-sized and micro-sized piezoelectric particles, was employed as a starting precursor in the film fabrication process. According to a scanning electron microscopy study, it is shown that a BNP thick film exhibits the densest homogeneous microstructures. According to surface area measurements, the BNP thick film was sufficiently densified without an additional infiltration process of Pb(Zr1-xTix)O3 sol for densification. The screen-printed BNP thick film possesses a dielectric constant and a remanent polarization much higher than those of a thick film composed of only micro-sized piezoelectric particles by a factor of more than two. This suggests the potential application of the BNP thick film, in conjunction with a silicon substrate, to a micromachined monolithic PZT thick film device on the silicon substrate.
| Original language | English |
|---|---|
| Pages (from-to) | 627-632 |
| Number of pages | 6 |
| Journal | Applied Physics A: Materials Science and Processing |
| Volume | 88 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2007 Sep 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)
Cite this
Fabrication of stabilized piezoelectric thick film for silicon-based MEMS device. / Kwon, T. Y.; Kim, Y. B.; Eom, K.; Yoon, Dae Sung; Lee, H. L.; Kim, T. S.
In: Applied Physics A: Materials Science and Processing, Vol. 88, No. 4, 01.09.2007, p. 627-632.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication of stabilized piezoelectric thick film for silicon-based MEMS device
AU - Kwon, T. Y.
AU - Kim, Y. B.
AU - Eom, K.
AU - Yoon, Dae Sung
AU - Lee, H. L.
AU - Kim, T. S.
PY - 2007/9/1
Y1 - 2007/9/1
N2 - Electrical properties of piezoelectric thick films with controlled microstructure were investigated. In order to enhance the electromechanical properties (e.g. d31, d33) of a thick film by control of its microstructure, a mixed powder, referred to as BNP, consisting of both nano-sized and micro-sized piezoelectric particles, was employed as a starting precursor in the film fabrication process. According to a scanning electron microscopy study, it is shown that a BNP thick film exhibits the densest homogeneous microstructures. According to surface area measurements, the BNP thick film was sufficiently densified without an additional infiltration process of Pb(Zr1-xTix)O3 sol for densification. The screen-printed BNP thick film possesses a dielectric constant and a remanent polarization much higher than those of a thick film composed of only micro-sized piezoelectric particles by a factor of more than two. This suggests the potential application of the BNP thick film, in conjunction with a silicon substrate, to a micromachined monolithic PZT thick film device on the silicon substrate.
AB - Electrical properties of piezoelectric thick films with controlled microstructure were investigated. In order to enhance the electromechanical properties (e.g. d31, d33) of a thick film by control of its microstructure, a mixed powder, referred to as BNP, consisting of both nano-sized and micro-sized piezoelectric particles, was employed as a starting precursor in the film fabrication process. According to a scanning electron microscopy study, it is shown that a BNP thick film exhibits the densest homogeneous microstructures. According to surface area measurements, the BNP thick film was sufficiently densified without an additional infiltration process of Pb(Zr1-xTix)O3 sol for densification. The screen-printed BNP thick film possesses a dielectric constant and a remanent polarization much higher than those of a thick film composed of only micro-sized piezoelectric particles by a factor of more than two. This suggests the potential application of the BNP thick film, in conjunction with a silicon substrate, to a micromachined monolithic PZT thick film device on the silicon substrate.
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U2 - 10.1007/s00339-007-4025-6
DO - 10.1007/s00339-007-4025-6
M3 - Article
AN - SCOPUS:34547396532
VL - 88
SP - 627
EP - 632
JO - Applied Physics
JF - Applied Physics
SN - 0340-3793
IS - 4
ER -