Fabrication of suspended thin film resonator for application of RF bandpass filter

Hyun Ho Kim, Byeong Kwon Ju, Yun-Hi Lee, Si Hyung Lee, Jeon Kook Lee, Soo-Won Kim

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Characteristics of AlN thin film and thin film resonator for RF bandpass filter have been studied. AlN thin films were deposited by RF magnetron sputter system. Deposition parameters such as N2 contents, Ar and N 2 partial pressures, and the distance between metal target and substrate were found to affect the piezoelectric response. To fabricate the suspended thin film resonator (STFR) using the piezoelectric AlN thin film, the etching of AlN and the surface micromachining process were conducted. The thickness of AlN film and membrane for the STFR are 2 and 15 μm, respectively. This membrane was fabricated by SOI technology. The device with the dimension of 160×160 μm2 has a resonant frequency of 1.653 GHz, a Keff 2 of 2.4%, a bandwidth of 17 MHz, and a quality factor of 91.7. The device with the dimension of 200×200 μm2 has a resonant frequency of 1.641 GHz, a Keff 2 of 1.2%, and a bandwidth of 9 MHz, and a quality factor of 50.2.

Original languageEnglish
Pages (from-to)237-243
Number of pages7
JournalMicroelectronics Reliability
Volume44
Issue number2
DOIs
Publication statusPublished - 2004 Feb 1

Fingerprint

Bandpass filters
bandpass filters
Resonators
resonators
Fabrication
Thin films
fabrication
thin films
resonant frequencies
Q factors
Natural frequencies
membranes
bandwidth
Membranes
Bandwidth
Surface micromachining
SOI (semiconductors)
micromachining
Partial pressure
partial pressure

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Fabrication of suspended thin film resonator for application of RF bandpass filter. / Kim, Hyun Ho; Ju, Byeong Kwon; Lee, Yun-Hi; Lee, Si Hyung; Lee, Jeon Kook; Kim, Soo-Won.

In: Microelectronics Reliability, Vol. 44, No. 2, 01.02.2004, p. 237-243.

Research output: Contribution to journalArticle

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AU - Kim, Soo-Won

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AB - Characteristics of AlN thin film and thin film resonator for RF bandpass filter have been studied. AlN thin films were deposited by RF magnetron sputter system. Deposition parameters such as N2 contents, Ar and N 2 partial pressures, and the distance between metal target and substrate were found to affect the piezoelectric response. To fabricate the suspended thin film resonator (STFR) using the piezoelectric AlN thin film, the etching of AlN and the surface micromachining process were conducted. The thickness of AlN film and membrane for the STFR are 2 and 15 μm, respectively. This membrane was fabricated by SOI technology. The device with the dimension of 160×160 μm2 has a resonant frequency of 1.653 GHz, a Keff 2 of 2.4%, a bandwidth of 17 MHz, and a quality factor of 91.7. The device with the dimension of 200×200 μm2 has a resonant frequency of 1.641 GHz, a Keff 2 of 1.2%, and a bandwidth of 9 MHz, and a quality factor of 50.2.

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