Electrical characteristics of field-effect thin-film transistors (TFTs) with p-channels composed of CdTe/CdHgTe core-shell nanocrystals are investigated in this work. For the fabrication of bottom- and top-gate TFTs, CdTe/CdHgTe core-shell nanocrystals synthesized by the colloidal method are first dispersed on oxidized p+ Si substrates by spin-coating, the dispersed nanocrystals are sintered at 150 °C to form the channels for the TFTs, and Al2O3 layers are deposited on the channels. A representative bottom-gate field-effect TFT with a bottom-gate SiO2 layer exhibits a mobility of 0.21 cm2/V s and an Ion/Ioff ratio of 1.5 × 102, and a representative top-gate field-effect TFT with a top-gate Al2O3 layer provides a field-effect mobility of 0.026 cm2/V s and an Ion/Ioff ratio of 2.5 × 102. The CdTe/CdHgTe nanocrystal-based TFTs with bottom- and top-gate geometries are compared in this paper.
- Top-gate and TFT
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Atomic and Molecular Physics, and Optics