Fabrication of thin-film transistors based on CdTe/CdHgTe core-shell nanocrystals

Dong Won Kim, Kyoungah Cho, Hyunsuk Kim, Byung Moo Moon, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


Electrical characteristics of field-effect thin-film transistors (TFTs) with p-channels composed of CdTe/CdHgTe core-shell nanocrystals are investigated in this work. For the fabrication of bottom- and top-gate TFTs, CdTe/CdHgTe core-shell nanocrystals synthesized by the colloidal method are first dispersed on oxidized p+ Si substrates by spin-coating, the dispersed nanocrystals are sintered at 150 °C to form the channels for the TFTs, and Al2O3 layers are deposited on the channels. A representative bottom-gate field-effect TFT with a bottom-gate SiO2 layer exhibits a mobility of 0.21 cm2/V s and an Ion/Ioff ratio of 1.5 × 102, and a representative top-gate field-effect TFT with a top-gate Al2O3 layer provides a field-effect mobility of 0.026 cm2/V s and an Ion/Ioff ratio of 2.5 × 102. The CdTe/CdHgTe nanocrystal-based TFTs with bottom- and top-gate geometries are compared in this paper.

Original languageEnglish
Pages (from-to)1643-1646
Number of pages4
JournalMicroelectronic Engineering
Issue number5-8
Publication statusPublished - 2007 May


  • Bottom-gate
  • Core-shell
  • Nanocrystal
  • Top-gate and TFT

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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