Fabrication of three-dimensional GaAs-AlGaAS heterostructures for improving carrier injection efficiency in quantum-wire FETs

Y. J. Kim, Y. J. Seo, E. H. Kim, D. H. Kim, C. H. Roh, H. Kim, C. K. Hahn, Yun Mo Sung, M. Ogura, Tae Geun Kim

Research output: Contribution to journalArticle

Abstract

Three-dimensional (3D) GaAs-AlGaAS heterostructures were grown by selective-area molecular beam epitaxy on a patterned GaAs(0 0 1) substrate to improve the efficiency of carrier transport from the source to the drain through 1D channels in quantum-wire (QWR) field-effect transistors. Prior to the QWR growth, GaAs ridge structures with 2 μm line-and-space patterns, were prepared as the starting materials. The surface of the ridge was chemically treated with an NH3 solution to improve the surface roughness and thereby to minimize the defect density at the GaAs/AlGaAs interface. Then, GaAs/AlGaAs QWRs were grown on top of the ridge structures with optimum growth conditions. A scanning electron microscope and position-resolved μ-PL measurements along the QWR direction showed that 3D GaAs-AlGaAS heterostructures, where 1D QWRs were adiabatically coupled with a 2D electron gas, were successfully fabricated.

Original languageEnglish
Pages (from-to)328-331
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume40
Issue number2
DOIs
Publication statusPublished - 2007 Dec 1

Fingerprint

Semiconductor quantum wires
carrier injection
Field effect transistors
quantum wires
Heterojunctions
ridges
field effect transistors
Fabrication
fabrication
aluminum gallium arsenides
Electron gas
Carrier transport
Defect density
Molecular beam epitaxy
electron gas
surface roughness
Electron microscopes
molecular beam epitaxy
electron microscopes
Surface roughness

Keywords

  • FETs
  • GaAs-AlGaAS
  • Heterostructures
  • Quantum wire
  • Selective area MBE

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Fabrication of three-dimensional GaAs-AlGaAS heterostructures for improving carrier injection efficiency in quantum-wire FETs. / Kim, Y. J.; Seo, Y. J.; Kim, E. H.; Kim, D. H.; Roh, C. H.; Kim, H.; Hahn, C. K.; Sung, Yun Mo; Ogura, M.; Kim, Tae Geun.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 40, No. 2, 01.12.2007, p. 328-331.

Research output: Contribution to journalArticle

Kim, Y. J. ; Seo, Y. J. ; Kim, E. H. ; Kim, D. H. ; Roh, C. H. ; Kim, H. ; Hahn, C. K. ; Sung, Yun Mo ; Ogura, M. ; Kim, Tae Geun. / Fabrication of three-dimensional GaAs-AlGaAS heterostructures for improving carrier injection efficiency in quantum-wire FETs. In: Physica E: Low-Dimensional Systems and Nanostructures. 2007 ; Vol. 40, No. 2. pp. 328-331.
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AU - Roh, C. H.

AU - Kim, H.

AU - Hahn, C. K.

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AU - Ogura, M.

AU - Kim, Tae Geun

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AB - Three-dimensional (3D) GaAs-AlGaAS heterostructures were grown by selective-area molecular beam epitaxy on a patterned GaAs(0 0 1) substrate to improve the efficiency of carrier transport from the source to the drain through 1D channels in quantum-wire (QWR) field-effect transistors. Prior to the QWR growth, GaAs ridge structures with 2 μm line-and-space patterns, were prepared as the starting materials. The surface of the ridge was chemically treated with an NH3 solution to improve the surface roughness and thereby to minimize the defect density at the GaAs/AlGaAs interface. Then, GaAs/AlGaAs QWRs were grown on top of the ridge structures with optimum growth conditions. A scanning electron microscope and position-resolved μ-PL measurements along the QWR direction showed that 3D GaAs-AlGaAS heterostructures, where 1D QWRs were adiabatically coupled with a 2D electron gas, were successfully fabricated.

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