Fabrication of two-dimensional photonic crystal patterns on GaN-based light-emitting diodes using thermally curable monomer-based nanoimprint lithography

Kyeong Jae Byeon, Seon Yong Hwang, Heon Lee

Research output: Contribution to journalArticle

77 Citations (Scopus)

Abstract

The fabrication process of photonic crystals in a p-GaN layer was established to improve the light extraction efficiency of light-emitting diodes (LEDs) by using nanoimprint lithography and inductively coupled plasma (ICP) etching process. Due to low etch selectivity of imprinted pattern, Cr mask patterns were lifted-off from the p-GaN surface and ICP etch process was followed using Si Cl4 -based plasma. As a result, two-dimensional pillar array patterns were uniformly fabricated on the p-GaN layer and the photoluminescence intensity of the photonic crystal patterned LED was increased by 2.6 fold compared to that of the same LED sample without photonic crystal patterns.

Original languageEnglish
Article number091106
JournalApplied Physics Letters
Volume91
Issue number9
DOIs
Publication statusPublished - 2007 Sep 7

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light emitting diodes
lithography
monomers
photonics
fabrication
crystals
plasma etching
masks
selectivity
photoluminescence

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Fabrication of two-dimensional photonic crystal patterns on GaN-based light-emitting diodes using thermally curable monomer-based nanoimprint lithography. / Byeon, Kyeong Jae; Hwang, Seon Yong; Lee, Heon.

In: Applied Physics Letters, Vol. 91, No. 9, 091106, 07.09.2007.

Research output: Contribution to journalArticle

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