Fabrication of V-grooved inner stripe GaAs-AlGaAs quantum-wire lasers

Tae Geun Kim, Sung Min Hwang, Eun Kyu Kim, Suk Ki Min, Jong Il Jeon, Si Jong Leem, Jichai Jeong, Jung ho Park

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

V-grooved inner stripe (VIS) GaAs-AlGaAs quantum-wire (QWR) lasers were successfully fabricated by combining two-step metalorganic chemical vapor deposition (MOCVD) growth with a wet-etching technique. In order to achieve low threshold current density and high reliability, a conductive stripe width (W), a thickness (tp-CBL), and a doping concentration (np-CBL) of the p-GaAs current-blocking layer (CBL) were determined to be W = 1.2 μm, tp-CBL = 2 μm, and np-CBL = 1 × 1018 cm-3. The leakage currents passing through the CBL were also estimated using a modified P-SPICE. Thus far, a threshold current of 45 mA and an output power of 4 mW at 51 mA have been achieved under room-temperature pulsed operation for some devices with uncoated facets.

Original languageEnglish
Pages (from-to)274-276
Number of pages3
JournalIEEE Photonics Technology Letters
Volume9
Issue number3
DOIs
Publication statusPublished - 1997 Mar 1

Fingerprint

Threshold current density
Semiconductor quantum wires
Wet etching
Metallorganic chemical vapor deposition
SPICE
quantum wires
Leakage currents
aluminum gallium arsenides
Doping (additives)
Fabrication
fabrication
Lasers
lasers
Temperature
threshold currents
gallium arsenide
metalorganic chemical vapor deposition
flat surfaces
leakage
etching

Keywords

  • MOCVD
  • p-n junction isolation
  • Two-step growth with a wet etching technique
  • V-grooved inner stripe quantum-wire laser

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

Cite this

Fabrication of V-grooved inner stripe GaAs-AlGaAs quantum-wire lasers. / Kim, Tae Geun; Hwang, Sung Min; Kim, Eun Kyu; Min, Suk Ki; Jeon, Jong Il; Leem, Si Jong; Jeong, Jichai; Park, Jung ho.

In: IEEE Photonics Technology Letters, Vol. 9, No. 3, 01.03.1997, p. 274-276.

Research output: Contribution to journalArticle

Kim, Tae Geun ; Hwang, Sung Min ; Kim, Eun Kyu ; Min, Suk Ki ; Jeon, Jong Il ; Leem, Si Jong ; Jeong, Jichai ; Park, Jung ho. / Fabrication of V-grooved inner stripe GaAs-AlGaAs quantum-wire lasers. In: IEEE Photonics Technology Letters. 1997 ; Vol. 9, No. 3. pp. 274-276.
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