Abstract
V-grooved inner stripe (VIS) GaAs-AlGaAs quantum-wire (QWR) lasers were successfully fabricated by combining two-step metalorganic chemical vapor deposition (MOCVD) growth with a wet-etching technique. In order to achieve low threshold current density and high reliability, a conductive stripe width (W), a thickness (tp-CBL), and a doping concentration (np-CBL) of the p-GaAs current-blocking layer (CBL) were determined to be W = 1.2 μm, tp-CBL = 2 μm, and np-CBL = 1 × 1018 cm-3. The leakage currents passing through the CBL were also estimated using a modified P-SPICE. Thus far, a threshold current of 45 mA and an output power of 4 mW at 51 mA have been achieved under room-temperature pulsed operation for some devices with uncoated facets.
| Original language | English |
|---|---|
| Pages (from-to) | 274-276 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 9 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1997 Mar 1 |
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Keywords
- MOCVD
- p-n junction isolation
- Two-step growth with a wet etching technique
- V-grooved inner stripe quantum-wire laser
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
- Physics and Astronomy (miscellaneous)
Cite this
Fabrication of V-grooved inner stripe GaAs-AlGaAs quantum-wire lasers. / Kim, Tae Geun; Hwang, Sung Min; Kim, Eun Kyu; Min, Suk Ki; Jeon, Jong Il; Leem, Si Jong; Jeong, Jichai; Park, Jung ho.
In: IEEE Photonics Technology Letters, Vol. 9, No. 3, 01.03.1997, p. 274-276.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication of V-grooved inner stripe GaAs-AlGaAs quantum-wire lasers
AU - Kim, Tae Geun
AU - Hwang, Sung Min
AU - Kim, Eun Kyu
AU - Min, Suk Ki
AU - Jeon, Jong Il
AU - Leem, Si Jong
AU - Jeong, Jichai
AU - Park, Jung ho
PY - 1997/3/1
Y1 - 1997/3/1
N2 - V-grooved inner stripe (VIS) GaAs-AlGaAs quantum-wire (QWR) lasers were successfully fabricated by combining two-step metalorganic chemical vapor deposition (MOCVD) growth with a wet-etching technique. In order to achieve low threshold current density and high reliability, a conductive stripe width (W), a thickness (tp-CBL), and a doping concentration (np-CBL) of the p-GaAs current-blocking layer (CBL) were determined to be W = 1.2 μm, tp-CBL = 2 μm, and np-CBL = 1 × 1018 cm-3. The leakage currents passing through the CBL were also estimated using a modified P-SPICE. Thus far, a threshold current of 45 mA and an output power of 4 mW at 51 mA have been achieved under room-temperature pulsed operation for some devices with uncoated facets.
AB - V-grooved inner stripe (VIS) GaAs-AlGaAs quantum-wire (QWR) lasers were successfully fabricated by combining two-step metalorganic chemical vapor deposition (MOCVD) growth with a wet-etching technique. In order to achieve low threshold current density and high reliability, a conductive stripe width (W), a thickness (tp-CBL), and a doping concentration (np-CBL) of the p-GaAs current-blocking layer (CBL) were determined to be W = 1.2 μm, tp-CBL = 2 μm, and np-CBL = 1 × 1018 cm-3. The leakage currents passing through the CBL were also estimated using a modified P-SPICE. Thus far, a threshold current of 45 mA and an output power of 4 mW at 51 mA have been achieved under room-temperature pulsed operation for some devices with uncoated facets.
KW - MOCVD
KW - p-n junction isolation
KW - Two-step growth with a wet etching technique
KW - V-grooved inner stripe quantum-wire laser
UR - http://www.scopus.com/inward/record.url?scp=0031104012&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031104012&partnerID=8YFLogxK
U2 - 10.1109/68.556044
DO - 10.1109/68.556044
M3 - Article
AN - SCOPUS:0031104012
VL - 9
SP - 274
EP - 276
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
IS - 3
ER -