Fabrication of V-grooved inner stripe GaAs-AlGaAs quantum-wire lasers

Tae Geun Kim, Sung Min Hwang, Eun Kyu Kim, Suk Ki Min, Jong Il Jeon, Si Jong Leem, Jichai Jeong, Jung Ho Park

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

V-grooved inner stripe (VIS) GaAs-AlGaAs quantum-wire (QWR) lasers were successfully fabricated by combining two-step metalorganic chemical vapor deposition (MOCVD) growth with a wet-etching technique. In order to achieve low threshold current density and high reliability, a conductive stripe width (W), a thickness (tp-CBL), and a doping concentration (np-CBL) of the p-GaAs current-blocking layer (CBL) were determined to be W = 1.2 μm, tp-CBL = 2 μm, and np-CBL = 1 × 1018 cm-3. The leakage currents passing through the CBL were also estimated using a modified P-SPICE. Thus far, a threshold current of 45 mA and an output power of 4 mW at 51 mA have been achieved under room-temperature pulsed operation for some devices with uncoated facets.

Original languageEnglish
Pages (from-to)274-276
Number of pages3
JournalIEEE Photonics Technology Letters
Volume9
Issue number3
DOIs
Publication statusPublished - 1997 Mar

Keywords

  • MOCVD
  • Two-step growth with a wet etching technique
  • V-grooved inner stripe quantum-wire laser
  • p-n junction isolation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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