Abstract
V-grooved inner stripe (VIS) GaAs-AlGaAs quantum-wire (QWR) lasers were successfully fabricated by combining two-step metalorganic chemical vapor deposition (MOCVD) growth with a wet-etching technique. In order to achieve low threshold current density and high reliability, a conductive stripe width (W), a thickness (tp-CBL), and a doping concentration (np-CBL) of the p-GaAs current-blocking layer (CBL) were determined to be W = 1.2 μm, tp-CBL = 2 μm, and np-CBL = 1 × 1018 cm-3. The leakage currents passing through the CBL were also estimated using a modified P-SPICE. Thus far, a threshold current of 45 mA and an output power of 4 mW at 51 mA have been achieved under room-temperature pulsed operation for some devices with uncoated facets.
Original language | English |
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Pages (from-to) | 274-276 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 9 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1997 Mar |
Keywords
- MOCVD
- Two-step growth with a wet etching technique
- V-grooved inner stripe quantum-wire laser
- p-n junction isolation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering