Fabrication of V-grooved inner stripe GaAs-AlGaAs quantum-wire lasers

Tae Geun Kim; Sung Min Hwang; Eun Kyu Kim; Suk Ki Min; Jong Il Jeon; Si Jong Leem; Jichai Jeong; Jung Ho Park

doi:10.1109/68.556044

Fabrication of V-grooved inner stripe GaAs-AlGaAs quantum-wire lasers

Tae Geun Kim, Sung Min Hwang, Eun Kyu Kim, Suk Ki Min, Jong Il Jeon, Si Jong Leem, Jichai Jeong, Jung Ho Park

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

V-grooved inner stripe (VIS) GaAs-AlGaAs quantum-wire (QWR) lasers were successfully fabricated by combining two-step metalorganic chemical vapor deposition (MOCVD) growth with a wet-etching technique. In order to achieve low threshold current density and high reliability, a conductive stripe width (W), a thickness (t_p-CBL), and a doping concentration (n_p-CBL) of the p-GaAs current-blocking layer (CBL) were determined to be W = 1.2 μm, t_p-CBL = 2 μm, and n_p-CBL = 1 × 10¹⁸ cm^-3. The leakage currents passing through the CBL were also estimated using a modified P-SPICE. Thus far, a threshold current of 45 mA and an output power of 4 mW at 51 mA have been achieved under room-temperature pulsed operation for some devices with uncoated facets.

Original language	English
Pages (from-to)	274-276
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	9
Issue number	3
DOIs	https://doi.org/10.1109/68.556044
Publication status	Published - 1997 Mar

Keywords

MOCVD
Two-step growth with a wet etching technique
V-grooved inner stripe quantum-wire laser
p-n junction isolation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.556044

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title = "Fabrication of V-grooved inner stripe GaAs-AlGaAs quantum-wire lasers",

abstract = "V-grooved inner stripe (VIS) GaAs-AlGaAs quantum-wire (QWR) lasers were successfully fabricated by combining two-step metalorganic chemical vapor deposition (MOCVD) growth with a wet-etching technique. In order to achieve low threshold current density and high reliability, a conductive stripe width (W), a thickness (tp-CBL), and a doping concentration (np-CBL) of the p-GaAs current-blocking layer (CBL) were determined to be W = 1.2 μm, tp-CBL = 2 μm, and np-CBL = 1 × 1018 cm-3. The leakage currents passing through the CBL were also estimated using a modified P-SPICE. Thus far, a threshold current of 45 mA and an output power of 4 mW at 51 mA have been achieved under room-temperature pulsed operation for some devices with uncoated facets.",

keywords = "MOCVD, Two-step growth with a wet etching technique, V-grooved inner stripe quantum-wire laser, p-n junction isolation",

author = "Kim, {Tae Geun} and Hwang, {Sung Min} and Kim, {Eun Kyu} and Min, {Suk Ki} and Jeon, {Jong Il} and Leem, {Si Jong} and Jichai Jeong and Park, {Jung Ho}",

note = "Funding Information: Manuscript received September 26, 1996; revised November 4, 1996. This work was supported by KIST 2000 program under Contract 2V00152. T. G. Kim, S.-M. Hwang, E. K. Kim, and S.-K. Min are with the Semiconductor Materials Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650, Korea. J.-I. Jeon, S.-J. Leem, J. Jeong, and J.-Ho. Park are with the Department of Electronics Engineering, Korea University, Seoul 136-701, Korea. Publisher Item Identifier S 1041-1135(97)01933-2.",

year = "1997",

month = mar,

doi = "10.1109/68.556044",

language = "English",

volume = "9",

pages = "274--276",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Fabrication of V-grooved inner stripe GaAs-AlGaAs quantum-wire lasers

AU - Kim, Tae Geun

AU - Hwang, Sung Min

AU - Kim, Eun Kyu

AU - Min, Suk Ki

AU - Jeon, Jong Il

AU - Leem, Si Jong

AU - Jeong, Jichai

AU - Park, Jung Ho

N1 - Funding Information: Manuscript received September 26, 1996; revised November 4, 1996. This work was supported by KIST 2000 program under Contract 2V00152. T. G. Kim, S.-M. Hwang, E. K. Kim, and S.-K. Min are with the Semiconductor Materials Research Center, Korea Institute of Science and Technology, Cheongryang, Seoul 130-650, Korea. J.-I. Jeon, S.-J. Leem, J. Jeong, and J.-Ho. Park are with the Department of Electronics Engineering, Korea University, Seoul 136-701, Korea. Publisher Item Identifier S 1041-1135(97)01933-2.

PY - 1997/3

Y1 - 1997/3

N2 - V-grooved inner stripe (VIS) GaAs-AlGaAs quantum-wire (QWR) lasers were successfully fabricated by combining two-step metalorganic chemical vapor deposition (MOCVD) growth with a wet-etching technique. In order to achieve low threshold current density and high reliability, a conductive stripe width (W), a thickness (tp-CBL), and a doping concentration (np-CBL) of the p-GaAs current-blocking layer (CBL) were determined to be W = 1.2 μm, tp-CBL = 2 μm, and np-CBL = 1 × 1018 cm-3. The leakage currents passing through the CBL were also estimated using a modified P-SPICE. Thus far, a threshold current of 45 mA and an output power of 4 mW at 51 mA have been achieved under room-temperature pulsed operation for some devices with uncoated facets.

AB - V-grooved inner stripe (VIS) GaAs-AlGaAs quantum-wire (QWR) lasers were successfully fabricated by combining two-step metalorganic chemical vapor deposition (MOCVD) growth with a wet-etching technique. In order to achieve low threshold current density and high reliability, a conductive stripe width (W), a thickness (tp-CBL), and a doping concentration (np-CBL) of the p-GaAs current-blocking layer (CBL) were determined to be W = 1.2 μm, tp-CBL = 2 μm, and np-CBL = 1 × 1018 cm-3. The leakage currents passing through the CBL were also estimated using a modified P-SPICE. Thus far, a threshold current of 45 mA and an output power of 4 mW at 51 mA have been achieved under room-temperature pulsed operation for some devices with uncoated facets.

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Fabrication of V-grooved inner stripe GaAs-AlGaAs quantum-wire lasers

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Keywords

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