Fabrication of vertical organic junction transistor by direct printing method

Gunchul Shin, Gyu-Tae Kim, Jeong Sook Ha

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

An organic junction transistor with a vertical structure based on an active layer of poly(3-hexylthiophene) was fabricated by facile micro-contact printing combined with the Langmuir-Schaefer technique, without conventional e-beam or photo-lithography. Direct printing and subsequent annealing of Au-nanoparticles provided control over the thickness of the Au electrode and hence control of the electrical contact between the Au electrode and the active layer, ohmic or Schottky. The junction showed similar current-voltage characteristics to an NPN-type transistor. Current through the emitter was simply controllable by the base voltage and a high transconductance of ~0.2 mS was obtained. This novel fabrication method can be applied to amplifying or fast switching organic devices.

Original languageEnglish
Pages (from-to)731-736
Number of pages6
JournalBulletin of the Korean Chemical Society
Volume35
Issue number3
DOIs
Publication statusPublished - 2014 Mar 20

Fingerprint

Printing
Transistors
Fabrication
Electrodes
Transconductance
Current voltage characteristics
Lithography
Annealing
Nanoparticles
Electric potential
poly(3-hexylthiophene)

Keywords

  • Au-nanoparticle
  • Langmuir-Schaefer technique
  • Micro-contact printing
  • Organic junction transistor
  • Poly(3-hexylthiophene)

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Fabrication of vertical organic junction transistor by direct printing method. / Shin, Gunchul; Kim, Gyu-Tae; Ha, Jeong Sook.

In: Bulletin of the Korean Chemical Society, Vol. 35, No. 3, 20.03.2014, p. 731-736.

Research output: Contribution to journalArticle

@article{dcd197d188a346c4b05a9b57cbda1b13,
title = "Fabrication of vertical organic junction transistor by direct printing method",
abstract = "An organic junction transistor with a vertical structure based on an active layer of poly(3-hexylthiophene) was fabricated by facile micro-contact printing combined with the Langmuir-Schaefer technique, without conventional e-beam or photo-lithography. Direct printing and subsequent annealing of Au-nanoparticles provided control over the thickness of the Au electrode and hence control of the electrical contact between the Au electrode and the active layer, ohmic or Schottky. The junction showed similar current-voltage characteristics to an NPN-type transistor. Current through the emitter was simply controllable by the base voltage and a high transconductance of ~0.2 mS was obtained. This novel fabrication method can be applied to amplifying or fast switching organic devices.",
keywords = "Au-nanoparticle, Langmuir-Schaefer technique, Micro-contact printing, Organic junction transistor, Poly(3-hexylthiophene)",
author = "Gunchul Shin and Gyu-Tae Kim and Ha, {Jeong Sook}",
year = "2014",
month = "3",
day = "20",
doi = "10.5012/bkcs.2014.35.3.731",
language = "English",
volume = "35",
pages = "731--736",
journal = "Bulletin of the Korean Chemical Society",
issn = "0253-2964",
publisher = "Wiley-Blackwell",
number = "3",

}

TY - JOUR

T1 - Fabrication of vertical organic junction transistor by direct printing method

AU - Shin, Gunchul

AU - Kim, Gyu-Tae

AU - Ha, Jeong Sook

PY - 2014/3/20

Y1 - 2014/3/20

N2 - An organic junction transistor with a vertical structure based on an active layer of poly(3-hexylthiophene) was fabricated by facile micro-contact printing combined with the Langmuir-Schaefer technique, without conventional e-beam or photo-lithography. Direct printing and subsequent annealing of Au-nanoparticles provided control over the thickness of the Au electrode and hence control of the electrical contact between the Au electrode and the active layer, ohmic or Schottky. The junction showed similar current-voltage characteristics to an NPN-type transistor. Current through the emitter was simply controllable by the base voltage and a high transconductance of ~0.2 mS was obtained. This novel fabrication method can be applied to amplifying or fast switching organic devices.

AB - An organic junction transistor with a vertical structure based on an active layer of poly(3-hexylthiophene) was fabricated by facile micro-contact printing combined with the Langmuir-Schaefer technique, without conventional e-beam or photo-lithography. Direct printing and subsequent annealing of Au-nanoparticles provided control over the thickness of the Au electrode and hence control of the electrical contact between the Au electrode and the active layer, ohmic or Schottky. The junction showed similar current-voltage characteristics to an NPN-type transistor. Current through the emitter was simply controllable by the base voltage and a high transconductance of ~0.2 mS was obtained. This novel fabrication method can be applied to amplifying or fast switching organic devices.

KW - Au-nanoparticle

KW - Langmuir-Schaefer technique

KW - Micro-contact printing

KW - Organic junction transistor

KW - Poly(3-hexylthiophene)

UR - http://www.scopus.com/inward/record.url?scp=84896507302&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896507302&partnerID=8YFLogxK

U2 - 10.5012/bkcs.2014.35.3.731

DO - 10.5012/bkcs.2014.35.3.731

M3 - Article

VL - 35

SP - 731

EP - 736

JO - Bulletin of the Korean Chemical Society

JF - Bulletin of the Korean Chemical Society

SN - 0253-2964

IS - 3

ER -