Fabrications of 6,13-bis(triisopropylsilylethynyl)-pentacene thin-film transistors via metal transfer method using a polymer stamp

T. Y. Oh, J. H. Kwon, M. H. Chung, H. S. Bae, S. Chang, J. H. Park, K. Y. Dong, B. K. Ju

Research output: Contribution to conferencePaper

Abstract

We fabricated 6,13-bis(triisopropylsilylethynyl) -pentacene thin-film transistors using direct metal transfer method. With different surface adhesion of substrates, patterns are formed from the relief region of the polymer mold. We obtained an electrical characteristic, including field-effect mobility of 0.008 cm2/Vs, current on/off ratio of 1.6×103, and subthreshold slope of 0.59 V/dec.

Original languageEnglish
Pages1841-1842
Number of pages2
Publication statusPublished - 2009
Event16th International Display Workshops, IDW '09 - Miyazaki, Japan
Duration: 2009 Dec 92009 Dec 11

Other

Other16th International Display Workshops, IDW '09
CountryJapan
CityMiyazaki
Period09/12/909/12/11

ASJC Scopus subject areas

  • Hardware and Architecture
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Oh, T. Y., Kwon, J. H., Chung, M. H., Bae, H. S., Chang, S., Park, J. H., Dong, K. Y., & Ju, B. K. (2009). Fabrications of 6,13-bis(triisopropylsilylethynyl)-pentacene thin-film transistors via metal transfer method using a polymer stamp. 1841-1842. Paper presented at 16th International Display Workshops, IDW '09, Miyazaki, Japan.