Facile fabrication of free-standing light emitting diode by combination of wet chemical etchings

Lee Woon Jang, Dae Woo Jeon, Tae Hoon Chung, Alexander Y. Polyakov, Han Su Cho, Jin Hyeon Yun, Jin Woo Ju, Jong Hyeob Baek, Joo Won Choi, In Hwan Lee

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9 Citations (Scopus)

Abstract

Free-standing GaN light-emitting diode (LED) structure with high crystalline quality was fabricated by combining electrochemical and photoelectrochemical etching followed by regrowth of LED structure and subsequent mechanical detachment from a substrate. The structural quality and composition of the regrown LED film thus produced was similar to standard LED, but the photoluminescence and electroluminescence intensity of the LED structures on the etched template were several times higher than for standard LED. The performance enhancement was attributable to additional light scattering and improved crystalline quality as a result of the combined etching scheme.

Original languageEnglish
Pages (from-to)985-989
Number of pages5
JournalACS Applied Materials and Interfaces
Volume6
Issue number2
DOIs
Publication statusPublished - 2014 Jan 22

Keywords

  • EC-PEC
  • GaN LED
  • lift-off
  • nanostructure

ASJC Scopus subject areas

  • Materials Science(all)

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    Jang, L. W., Jeon, D. W., Chung, T. H., Polyakov, A. Y., Cho, H. S., Yun, J. H., Ju, J. W., Baek, J. H., Choi, J. W., & Lee, I. H. (2014). Facile fabrication of free-standing light emitting diode by combination of wet chemical etchings. ACS Applied Materials and Interfaces, 6(2), 985-989. https://doi.org/10.1021/am404285s