Facile fabrication of self-assembled ZnO nanowire network channels and its gate-controlled UV detection

Hochan Chang, Do Hoon Lee, Hyun Soo Kim, Jonghyurk Park, Byung Yang Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We demonstrate a facile way to fabricate an array of gate-controllable UV sensors based on assembled zinc oxide nanowire (ZnO NW) network field-effect transistor (FET). This was realized by combining both molecular surface programmed patterning and selective NW assembly on the polar regions avoiding the nonpolar regions, followed by heat treatment at 300 °C to ensure stable contact between NWs. The ZnO NW network FET devices showed typical n-type characteristic with an on-off ratio of 105, transconductance around 47 nS, and mobility around 0.175 cm2 V− 1 s− 1. In addition, the devices showed photoresponsive behavior to UV light that can be controlled by the applied gate voltage. The photoresponsivity was found to be linearly proportional to the channel voltage Vds, showing maximum photoresponsivity at Vds = 7 V.

Original languageEnglish
Article number413
JournalNanoscale Research Letters
Volume13
DOIs
Publication statusPublished - 2018 Jan 1

Fingerprint

Zinc Oxide
Field effect transistors
Zinc oxide
zinc oxides
Nanowires
nanowires
field effect transistors
Fabrication
fabrication
Transconductance
Electric potential
electric potential
transconductance
Ultraviolet radiation
polar regions
heat treatment
assembly
Heat treatment
sensors
Sensors

Keywords

  • Heat treatment
  • Photodetectors
  • Self-assembly
  • Zinc oxide nanowires

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Facile fabrication of self-assembled ZnO nanowire network channels and its gate-controlled UV detection. / Chang, Hochan; Lee, Do Hoon; Kim, Hyun Soo; Park, Jonghyurk; Lee, Byung Yang.

In: Nanoscale Research Letters, Vol. 13, 413, 01.01.2018.

Research output: Contribution to journalArticle

@article{622fbb3f9d674315853140e171b4aea3,
title = "Facile fabrication of self-assembled ZnO nanowire network channels and its gate-controlled UV detection",
abstract = "We demonstrate a facile way to fabricate an array of gate-controllable UV sensors based on assembled zinc oxide nanowire (ZnO NW) network field-effect transistor (FET). This was realized by combining both molecular surface programmed patterning and selective NW assembly on the polar regions avoiding the nonpolar regions, followed by heat treatment at 300 °C to ensure stable contact between NWs. The ZnO NW network FET devices showed typical n-type characteristic with an on-off ratio of 105, transconductance around 47 nS, and mobility around 0.175 cm2 V− 1 s− 1. In addition, the devices showed photoresponsive behavior to UV light that can be controlled by the applied gate voltage. The photoresponsivity was found to be linearly proportional to the channel voltage Vds, showing maximum photoresponsivity at Vds = 7 V.",
keywords = "Heat treatment, Photodetectors, Self-assembly, Zinc oxide nanowires",
author = "Hochan Chang and Lee, {Do Hoon} and Kim, {Hyun Soo} and Jonghyurk Park and Lee, {Byung Yang}",
year = "2018",
month = "1",
day = "1",
doi = "10.1186/s11671-018-2774-0",
language = "English",
volume = "13",
journal = "Nanoscale Research Letters",
issn = "1931-7573",
publisher = "Springer New York",

}

TY - JOUR

T1 - Facile fabrication of self-assembled ZnO nanowire network channels and its gate-controlled UV detection

AU - Chang, Hochan

AU - Lee, Do Hoon

AU - Kim, Hyun Soo

AU - Park, Jonghyurk

AU - Lee, Byung Yang

PY - 2018/1/1

Y1 - 2018/1/1

N2 - We demonstrate a facile way to fabricate an array of gate-controllable UV sensors based on assembled zinc oxide nanowire (ZnO NW) network field-effect transistor (FET). This was realized by combining both molecular surface programmed patterning and selective NW assembly on the polar regions avoiding the nonpolar regions, followed by heat treatment at 300 °C to ensure stable contact between NWs. The ZnO NW network FET devices showed typical n-type characteristic with an on-off ratio of 105, transconductance around 47 nS, and mobility around 0.175 cm2 V− 1 s− 1. In addition, the devices showed photoresponsive behavior to UV light that can be controlled by the applied gate voltage. The photoresponsivity was found to be linearly proportional to the channel voltage Vds, showing maximum photoresponsivity at Vds = 7 V.

AB - We demonstrate a facile way to fabricate an array of gate-controllable UV sensors based on assembled zinc oxide nanowire (ZnO NW) network field-effect transistor (FET). This was realized by combining both molecular surface programmed patterning and selective NW assembly on the polar regions avoiding the nonpolar regions, followed by heat treatment at 300 °C to ensure stable contact between NWs. The ZnO NW network FET devices showed typical n-type characteristic with an on-off ratio of 105, transconductance around 47 nS, and mobility around 0.175 cm2 V− 1 s− 1. In addition, the devices showed photoresponsive behavior to UV light that can be controlled by the applied gate voltage. The photoresponsivity was found to be linearly proportional to the channel voltage Vds, showing maximum photoresponsivity at Vds = 7 V.

KW - Heat treatment

KW - Photodetectors

KW - Self-assembly

KW - Zinc oxide nanowires

UR - http://www.scopus.com/inward/record.url?scp=85059039457&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85059039457&partnerID=8YFLogxK

U2 - 10.1186/s11671-018-2774-0

DO - 10.1186/s11671-018-2774-0

M3 - Article

AN - SCOPUS:85059039457

VL - 13

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

SN - 1931-7573

M1 - 413

ER -