Failure analysis of Ge2Sb2Te5 based phase change memory

Sung Hoon Hong, Heon Lee

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

A phase change memory device, consisting of Ge2Sb 2Te5 chalcogenide, a Mo electrode and a SiO2 dielectric layer, was fabricated in order to investigate the failure mechanism. During the pulsed mode switching of the device with a reset pulse (5.0 V, 90 ns) and a set pulse (1.5 V, 30 μs), some devices failed to reset stuck. Those reset stuck devices showed a delaminated interface with decomposed Ge 2Sb2Te5 chalcogenide. A thin layer of elemental Te or a Te rich phase was observed at the interface. A working device, switched over 600 times, shows no delamination between Ge2Sb 2Te5 chalcogenide and the Mo electrode and no sign or decomposition.

Original languageEnglish
Pages (from-to)3372-3375
Number of pages4
JournalJapanese Journal of Applied Physics
Volume47
Issue number5 PART 1
DOIs
Publication statusPublished - 2008 May 16

Fingerprint

Phase change memory
failure analysis
Failure analysis
Electrodes
Delamination
Decomposition
Data storage equipment
electrodes
pulses
decomposition

Keywords

  • Delamination
  • GeSbTe
  • Phase change memory
  • Reset stuck
  • Set stuck

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Failure analysis of Ge2Sb2Te5 based phase change memory. / Hong, Sung Hoon; Lee, Heon.

In: Japanese Journal of Applied Physics, Vol. 47, No. 5 PART 1, 16.05.2008, p. 3372-3375.

Research output: Contribution to journalArticle

Hong, Sung Hoon ; Lee, Heon. / Failure analysis of Ge2Sb2Te5 based phase change memory. In: Japanese Journal of Applied Physics. 2008 ; Vol. 47, No. 5 PART 1. pp. 3372-3375.
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