Abstract
A phase change memory device, consisting of Ge2Sb 2Te5 chalcogenide, a Mo electrode and a SiO2 dielectric layer, was fabricated in order to investigate the failure mechanism. During the pulsed mode switching of the device with a reset pulse (5.0 V, 90 ns) and a set pulse (1.5 V, 30 μs), some devices failed to reset stuck. Those reset stuck devices showed a delaminated interface with decomposed Ge 2Sb2Te5 chalcogenide. A thin layer of elemental Te or a Te rich phase was observed at the interface. A working device, switched over 600 times, shows no delamination between Ge2Sb 2Te5 chalcogenide and the Mo electrode and no sign or decomposition.
Original language | English |
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Pages (from-to) | 3372-3375 |
Number of pages | 4 |
Journal | Japanese journal of applied physics |
Volume | 47 |
Issue number | 5 PART 1 |
DOIs | |
Publication status | Published - 2008 May 16 |
Keywords
- Delamination
- GeSbTe
- Phase change memory
- Reset stuck
- Set stuck
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)