Failure analysis of Ge2Sb2Te5 based phase change memory

Sung Hoon Hong, Heon Lee

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

A phase change memory device, consisting of Ge2Sb 2Te5 chalcogenide, a Mo electrode and a SiO2 dielectric layer, was fabricated in order to investigate the failure mechanism. During the pulsed mode switching of the device with a reset pulse (5.0 V, 90 ns) and a set pulse (1.5 V, 30 μs), some devices failed to reset stuck. Those reset stuck devices showed a delaminated interface with decomposed Ge 2Sb2Te5 chalcogenide. A thin layer of elemental Te or a Te rich phase was observed at the interface. A working device, switched over 600 times, shows no delamination between Ge2Sb 2Te5 chalcogenide and the Mo electrode and no sign or decomposition.

Original languageEnglish
Pages (from-to)3372-3375
Number of pages4
JournalJapanese journal of applied physics
Volume47
Issue number5 PART 1
DOIs
Publication statusPublished - 2008 May 16

Keywords

  • Delamination
  • GeSbTe
  • Phase change memory
  • Reset stuck
  • Set stuck

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Failure analysis of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> based phase change memory'. Together they form a unique fingerprint.

Cite this