Abstract
A phase change memory device, consisting of Ge2Sb 2Te5 chalcogenide, a Mo electrode and a SiO2 dielectric layer, was fabricated in order to investigate the failure mechanism. During the pulsed mode switching of the device with a reset pulse (5.0 V, 90 ns) and a set pulse (1.5 V, 30 μs), some devices failed to reset stuck. Those reset stuck devices showed a delaminated interface with decomposed Ge 2Sb2Te5 chalcogenide. A thin layer of elemental Te or a Te rich phase was observed at the interface. A working device, switched over 600 times, shows no delamination between Ge2Sb 2Te5 chalcogenide and the Mo electrode and no sign or decomposition.
| Original language | English |
|---|---|
| Pages (from-to) | 3372-3375 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 47 |
| Issue number | 5 PART 1 |
| DOIs | |
| Publication status | Published - 2008 May 16 |
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Keywords
- Delamination
- GeSbTe
- Phase change memory
- Reset stuck
- Set stuck
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Failure analysis of Ge2Sb2Te5 based phase change memory. / Hong, Sung Hoon; Lee, Heon.
In: Japanese Journal of Applied Physics, Vol. 47, No. 5 PART 1, 16.05.2008, p. 3372-3375.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Failure analysis of Ge2Sb2Te5 based phase change memory
AU - Hong, Sung Hoon
AU - Lee, Heon
PY - 2008/5/16
Y1 - 2008/5/16
N2 - A phase change memory device, consisting of Ge2Sb 2Te5 chalcogenide, a Mo electrode and a SiO2 dielectric layer, was fabricated in order to investigate the failure mechanism. During the pulsed mode switching of the device with a reset pulse (5.0 V, 90 ns) and a set pulse (1.5 V, 30 μs), some devices failed to reset stuck. Those reset stuck devices showed a delaminated interface with decomposed Ge 2Sb2Te5 chalcogenide. A thin layer of elemental Te or a Te rich phase was observed at the interface. A working device, switched over 600 times, shows no delamination between Ge2Sb 2Te5 chalcogenide and the Mo electrode and no sign or decomposition.
AB - A phase change memory device, consisting of Ge2Sb 2Te5 chalcogenide, a Mo electrode and a SiO2 dielectric layer, was fabricated in order to investigate the failure mechanism. During the pulsed mode switching of the device with a reset pulse (5.0 V, 90 ns) and a set pulse (1.5 V, 30 μs), some devices failed to reset stuck. Those reset stuck devices showed a delaminated interface with decomposed Ge 2Sb2Te5 chalcogenide. A thin layer of elemental Te or a Te rich phase was observed at the interface. A working device, switched over 600 times, shows no delamination between Ge2Sb 2Te5 chalcogenide and the Mo electrode and no sign or decomposition.
KW - Delamination
KW - GeSbTe
KW - Phase change memory
KW - Reset stuck
KW - Set stuck
UR - http://www.scopus.com/inward/record.url?scp=55049141125&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=55049141125&partnerID=8YFLogxK
U2 - 10.1143/JJAP.47.3372
DO - 10.1143/JJAP.47.3372
M3 - Article
AN - SCOPUS:55049141125
VL - 47
SP - 3372
EP - 3375
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 5 PART 1
ER -