Fast concurrent growth of Ni 3Sn 4 and voids during solid-state reaction between Sn-rich solder and Ni substrates

Bo Mook Chung, Jaeho Choi, Joo Youl Huh

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

To simulate the growth of Ni 3Sn 4 phase layers in Sn-based solder joints with Ni substrates during solid-state aging, Sn/(Cu 1-x Ni x ) 6Sn 5/Ni and Sn/Ni diffusion couples were aged isothermally at 180°C and 200°C, and the growth kinetics of the (Ni,Cu) 3Sn 4 and Ni 3Sn 4 layers in the respective couples were monitored during the isothermal aging. Once the (Ni,Cu) 3Sn 4 layer was formed at the (Cu,Ni) 6Sn 5/Ni interface, it grew unexpectedly fast with concurrent growth of voids formed in the Sn layer during prolonged aging at both temperatures. The results obtained from the various types of diffusion couples revealed that the voids formed in the Sn layer were Kirkendall voids, due to the (Ni,Cu) 3Sn 4 layer growing predominantly at the (Ni,Cu) 3Sn 4/Ni interface by fast diffusion of Sn across the (Ni,Cu) 3Sn 4 layer. It is proposed that the accelerated growth of the (Ni,Cu) 3Sn 4 and Ni 3Sn 4 layers after the formation of voids in the Sn layer is due to the relaxation of vacancy oversaturation and the enhanced annihilation rate of incoming vacancies in the presence of the voids in the Sn layer.

Original languageEnglish
Pages (from-to)44-52
Number of pages9
JournalJournal of Electronic Materials
Volume41
Issue number1
DOIs
Publication statusPublished - 2012 Jan 1

Fingerprint

solders
Solid state reactions
Soldering alloys
voids
Aging of materials
solid state
Vacancies
Substrates
Growth kinetics
Temperature
kinetics

Keywords

  • diffusion
  • interfacial reaction
  • Kirkendall void
  • Ni Sn
  • Solder/Ni joint

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Fast concurrent growth of Ni 3Sn 4 and voids during solid-state reaction between Sn-rich solder and Ni substrates. / Chung, Bo Mook; Choi, Jaeho; Huh, Joo Youl.

In: Journal of Electronic Materials, Vol. 41, No. 1, 01.01.2012, p. 44-52.

Research output: Contribution to journalArticle

@article{08656338f47e4d44a9d3bab4f0f546c3,
title = "Fast concurrent growth of Ni 3Sn 4 and voids during solid-state reaction between Sn-rich solder and Ni substrates",
abstract = "To simulate the growth of Ni 3Sn 4 phase layers in Sn-based solder joints with Ni substrates during solid-state aging, Sn/(Cu 1-x Ni x ) 6Sn 5/Ni and Sn/Ni diffusion couples were aged isothermally at 180°C and 200°C, and the growth kinetics of the (Ni,Cu) 3Sn 4 and Ni 3Sn 4 layers in the respective couples were monitored during the isothermal aging. Once the (Ni,Cu) 3Sn 4 layer was formed at the (Cu,Ni) 6Sn 5/Ni interface, it grew unexpectedly fast with concurrent growth of voids formed in the Sn layer during prolonged aging at both temperatures. The results obtained from the various types of diffusion couples revealed that the voids formed in the Sn layer were Kirkendall voids, due to the (Ni,Cu) 3Sn 4 layer growing predominantly at the (Ni,Cu) 3Sn 4/Ni interface by fast diffusion of Sn across the (Ni,Cu) 3Sn 4 layer. It is proposed that the accelerated growth of the (Ni,Cu) 3Sn 4 and Ni 3Sn 4 layers after the formation of voids in the Sn layer is due to the relaxation of vacancy oversaturation and the enhanced annihilation rate of incoming vacancies in the presence of the voids in the Sn layer.",
keywords = "diffusion, interfacial reaction, Kirkendall void, Ni Sn, Solder/Ni joint",
author = "Chung, {Bo Mook} and Jaeho Choi and Huh, {Joo Youl}",
year = "2012",
month = "1",
day = "1",
doi = "10.1007/s11664-011-1736-4",
language = "English",
volume = "41",
pages = "44--52",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "1",

}

TY - JOUR

T1 - Fast concurrent growth of Ni 3Sn 4 and voids during solid-state reaction between Sn-rich solder and Ni substrates

AU - Chung, Bo Mook

AU - Choi, Jaeho

AU - Huh, Joo Youl

PY - 2012/1/1

Y1 - 2012/1/1

N2 - To simulate the growth of Ni 3Sn 4 phase layers in Sn-based solder joints with Ni substrates during solid-state aging, Sn/(Cu 1-x Ni x ) 6Sn 5/Ni and Sn/Ni diffusion couples were aged isothermally at 180°C and 200°C, and the growth kinetics of the (Ni,Cu) 3Sn 4 and Ni 3Sn 4 layers in the respective couples were monitored during the isothermal aging. Once the (Ni,Cu) 3Sn 4 layer was formed at the (Cu,Ni) 6Sn 5/Ni interface, it grew unexpectedly fast with concurrent growth of voids formed in the Sn layer during prolonged aging at both temperatures. The results obtained from the various types of diffusion couples revealed that the voids formed in the Sn layer were Kirkendall voids, due to the (Ni,Cu) 3Sn 4 layer growing predominantly at the (Ni,Cu) 3Sn 4/Ni interface by fast diffusion of Sn across the (Ni,Cu) 3Sn 4 layer. It is proposed that the accelerated growth of the (Ni,Cu) 3Sn 4 and Ni 3Sn 4 layers after the formation of voids in the Sn layer is due to the relaxation of vacancy oversaturation and the enhanced annihilation rate of incoming vacancies in the presence of the voids in the Sn layer.

AB - To simulate the growth of Ni 3Sn 4 phase layers in Sn-based solder joints with Ni substrates during solid-state aging, Sn/(Cu 1-x Ni x ) 6Sn 5/Ni and Sn/Ni diffusion couples were aged isothermally at 180°C and 200°C, and the growth kinetics of the (Ni,Cu) 3Sn 4 and Ni 3Sn 4 layers in the respective couples were monitored during the isothermal aging. Once the (Ni,Cu) 3Sn 4 layer was formed at the (Cu,Ni) 6Sn 5/Ni interface, it grew unexpectedly fast with concurrent growth of voids formed in the Sn layer during prolonged aging at both temperatures. The results obtained from the various types of diffusion couples revealed that the voids formed in the Sn layer were Kirkendall voids, due to the (Ni,Cu) 3Sn 4 layer growing predominantly at the (Ni,Cu) 3Sn 4/Ni interface by fast diffusion of Sn across the (Ni,Cu) 3Sn 4 layer. It is proposed that the accelerated growth of the (Ni,Cu) 3Sn 4 and Ni 3Sn 4 layers after the formation of voids in the Sn layer is due to the relaxation of vacancy oversaturation and the enhanced annihilation rate of incoming vacancies in the presence of the voids in the Sn layer.

KW - diffusion

KW - interfacial reaction

KW - Kirkendall void

KW - Ni Sn

KW - Solder/Ni joint

UR - http://www.scopus.com/inward/record.url?scp=84855466280&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84855466280&partnerID=8YFLogxK

U2 - 10.1007/s11664-011-1736-4

DO - 10.1007/s11664-011-1736-4

M3 - Article

AN - SCOPUS:84855466280

VL - 41

SP - 44

EP - 52

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 1

ER -