Fast switching behavior of nanoscale Ag6In5Sb59Te30 based nanopillar type phase change memory.

Sung Hoon Hong, Byeong Ju Bae, Heon Lee

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Ag and In co-doped SbTe phase change material (AgInSbTe) was used to fabricate nanopillar phase change memory. The AgInSbTe nanopillar type phase change device with 200 nm of diameter was fabricated by nanoimprint lithography and was reversibly changed between the resistances of 10(4) and 10(6) Omega by applying set/reset pulses using conducting atomic force microscopy. Due to the fast crystallization nature of AgInSbTe, the set operation of the device could be done with only 50 ns of set pulse. The fast crystallization nature of AgInSbTe is also responsible for the decrease in reset voltage of devices set with a short pulse.

Original languageEnglish
JournalNanotechnology
Volume21
Issue number2
Publication statusPublished - 2010 Jan 15

Fingerprint

Phase change memory
Crystallization
Nanoimprint lithography
Equipment and Supplies
Phase change materials
Atomic force microscopy
Atomic Force Microscopy
Electric potential

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

Cite this

Fast switching behavior of nanoscale Ag6In5Sb59Te30 based nanopillar type phase change memory. / Hong, Sung Hoon; Bae, Byeong Ju; Lee, Heon.

In: Nanotechnology, Vol. 21, No. 2, 15.01.2010.

Research output: Contribution to journalArticle

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