Fatigue behaviors of silicon nanowire field-effect transistors on bendable substrate

Yoonjoong Kim, Youngin Jeon, Doohyeok Lim, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


In this study, we fabricated an island-structured silicon nanowire (SiNW) field-effect transistor (FET) on an Ecoflex substrate and analyzed the device reliability against the bending fatigue. A SiNW-FET was fabricated on a plastic substrate and this FET on the plastic substrate was transferred onto the Ecoflex substrate. Compared to a SiNW-FET on a plastic substrate, the SiNW-FET with the island plastic structure on the Ecoflex substrate showed the stable electrical characteristics under various bending strain. Variations less than 10% of the threshold voltage and transconductance were observed under the bending strain of 15%. Moreover, the electrical characteristics were maintained even after 2000 bending cycles.

Original languageEnglish
Pages (from-to)12823-12826
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Issue number12
Publication statusPublished - 2016 Dec 1


  • Ecoflex substrate
  • Field-effect transistor
  • Island structure
  • Silicon-nanowire

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics


Dive into the research topics of 'Fatigue behaviors of silicon nanowire field-effect transistors on bendable substrate'. Together they form a unique fingerprint.

Cite this