Fatigue behaviors of silicon nanowire field-effect transistors on bendable substrate

Yoonjoong Kim, Youngin Jeon, Doohyeok Lim, Sangsig Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In this study, we fabricated an island-structured silicon nanowire (SiNW) field-effect transistor (FET) on an Ecoflex substrate and analyzed the device reliability against the bending fatigue. A SiNW-FET was fabricated on a plastic substrate and this FET on the plastic substrate was transferred onto the Ecoflex substrate. Compared to a SiNW-FET on a plastic substrate, the SiNW-FET with the island plastic structure on the Ecoflex substrate showed the stable electrical characteristics under various bending strain. Variations less than 10% of the threshold voltage and transconductance were observed under the bending strain of 15%. Moreover, the electrical characteristics were maintained even after 2000 bending cycles.

Original languageEnglish
Pages (from-to)12823-12826
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume16
Issue number12
DOIs
Publication statusPublished - 2016 Dec 1

Fingerprint

Nanowires
Silicon
Field effect transistors
Plastics
Fatigue
nanowires
field effect transistors
Fatigue of materials
silicon
Substrates
plastics
Islands
bending fatigue
Transconductance
transconductance
Threshold voltage
Equipment and Supplies
threshold voltage
ecoflex
cycles

Keywords

  • Ecoflex substrate
  • Field-effect transistor
  • Island structure
  • Silicon-nanowire

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Fatigue behaviors of silicon nanowire field-effect transistors on bendable substrate. / Kim, Yoonjoong; Jeon, Youngin; Lim, Doohyeok; Kim, Sangsig.

In: Journal of Nanoscience and Nanotechnology, Vol. 16, No. 12, 01.12.2016, p. 12823-12826.

Research output: Contribution to journalArticle

Kim, Yoonjoong ; Jeon, Youngin ; Lim, Doohyeok ; Kim, Sangsig. / Fatigue behaviors of silicon nanowire field-effect transistors on bendable substrate. In: Journal of Nanoscience and Nanotechnology. 2016 ; Vol. 16, No. 12. pp. 12823-12826.
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