Feedback and tunneling operations of a p +-i-n + silicon nanowire field-effect transistor

Yoonjoong Kim, Doohyeok Lim, Jinsun Cho, Sangsig Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this paper, we describe the feedback and tunneling operations of a dual top gate field-effect transistor (FET) with a p +-i-n + doped silicon nanowire channel. The transistor functions selectively in either a feedback FET (FBFET) or a tunneling FET mode by modulating the source-to-drain voltage, and it features an outstanding subthreshold swing characteristic of 6.15 mV dec-1 with an on/off current ratio (I on/I off) of approximately 106 in the feedback operating mode and of 41.3 mV dec-1 with I on/I off of ∼107 in the tunneling operating mode. Moreover, our device in the FBFET operation mode has memory characteristics with a retention time of 104 s and a program/erase endurance up to 103 cycles owing to the positive feedback loop in the channel region. This study demonstrates the promising potential of our devices in the development of multifunctional electronics.

Original languageEnglish
Article number435202
JournalNanotechnology
Volume29
Issue number43
DOIs
Publication statusPublished - 2018 Aug 28

Keywords

  • band-to-band tunneling
  • feedback loop
  • field-effect transistor
  • silicon nanowires
  • subthreshold swing

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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