Fermi Level Depinning in Ti/GeO₂/n-Ge via the Interfacial Reaction Between Ti and GeO₂

Yujin Seo, Tae In Lee, Hyun Jun Ahn, Jungmin Moon, Wan Sik Hwang, Hyun-Yong Yu, Byung Jin Cho

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A new method of forming an ohmic contact without an increase in parasitic resistance is proposed in the Ti/GeO₂/Ge substrate. Fermi-level depinning in Ti/GeO₂/n-Ge contacts is possible with the formation of an interfacial TiOx layer in the contacts via an interfacial reaction. Unlike the intentional deposition of a metal oxide on a Ge substrate, this method provides easy process integration to lessen Fermi-level pinning in n-type Ge substrates.

Original languageEnglish
JournalIEEE Transactions on Electron Devices
DOIs
Publication statusAccepted/In press - 2017 Aug 12

Fingerprint

Surface chemistry
Fermi level
Substrates
Ohmic contacts
Oxides
Metals

Keywords

  • Color
  • Conductivity
  • Contact resistance
  • Fermi-level pinning (FLP)
  • germanium
  • Metals
  • Resistance
  • Schottky barrier height (SBH)
  • Silicon
  • Substrates
  • titanium oxide.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Fermi Level Depinning in Ti/GeO₂/n-Ge via the Interfacial Reaction Between Ti and GeO₂ / Seo, Yujin; Lee, Tae In; Ahn, Hyun Jun; Moon, Jungmin; Hwang, Wan Sik; Yu, Hyun-Yong; Cho, Byung Jin.

In: IEEE Transactions on Electron Devices, 12.08.2017.

Research output: Contribution to journalArticle

Seo, Yujin ; Lee, Tae In ; Ahn, Hyun Jun ; Moon, Jungmin ; Hwang, Wan Sik ; Yu, Hyun-Yong ; Cho, Byung Jin. / Fermi Level Depinning in Ti/GeO₂/n-Ge via the Interfacial Reaction Between Ti and GeO₂. In: IEEE Transactions on Electron Devices. 2017.
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AU - Hwang, Wan Sik

AU - Yu, Hyun-Yong

AU - Cho, Byung Jin

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