A new method of forming an ohmic contact without an increase in parasitic resistance is proposed in the Ti/GeO2/Ge substrate. Fermi-level depinning in Ti/GeO2/n-Ge contacts is possible with the formation of an interfacial TiOx layer in the contacts via an interfacial reaction. Unlike the intentional deposition of a metal oxide on a Ge substrate, this method provides easy process integration to lessen Fermi-level pinning in n-type Ge substrates.
- Fermi-level pinning (FLP)
- Schottky barrier height (SBH)
- Titanium oxide
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering