Fermi Level Depinning in Ti/GeO2/n-Ge via the Interfacial Reaction Between Ti and GeO2

Yujin Seo, Tae In Lee, Hyun Jun Ahn, Jungmin Moon, Wan Sik Hwang, Hyun Yong Yu, Byung Jin Cho

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


A new method of forming an ohmic contact without an increase in parasitic resistance is proposed in the Ti/GeO2/Ge substrate. Fermi-level depinning in Ti/GeO2/n-Ge contacts is possible with the formation of an interfacial TiOx layer in the contacts via an interfacial reaction. Unlike the intentional deposition of a metal oxide on a Ge substrate, this method provides easy process integration to lessen Fermi-level pinning in n-type Ge substrates.

Original languageEnglish
Article number8010309
Pages (from-to)4242-4245
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number10
Publication statusPublished - 2017 Oct


  • Fermi-level pinning (FLP)
  • Germanium
  • Schottky barrier height (SBH)
  • Titanium oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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