Fermi level pinning in heavily neutron-irradiated GaN

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, N. G. Kolin, D. I. Merkurisov, V. M. Boiko, K. D. Shcherbatchev, V. T. Bublik, M. I. Voronova, In-Hwan Lee, C. R. Lee, S. J. Pearton, A. Dabirian, A. V. Osinsky

Research output: Contribution to journalArticle

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Abstract

Undoped n-GaN grown by two different metallorganic chemical vapor deposition (MOCVD) techniques, standard MOCVD and epitaxial lateral overgrowth, and Mg-doped p-GaN prepared by hydride vapor phase epitaxy and molecular beam epitaxy were irradiated with fast reactor neutrons to the high fluence of 1018 cm-2. In such heavily irradiated samples the Fermi level is shown to be pinned in a narrow interval of Ec - (0.8-0.95) eV, irrespective of the starting sample properties. The Fermi level pinning position correlates with the measured Schottky barrier height in n -type GaN. The results are interpreted from the standpoint of the existence of the charge neutrality level in heavily disordered material. Based on published theoretical calculations and on deep level transient spectroscopy (measurements and lattice parameter measurements in irradiated material), it is proposed that the Fermi level could be pinned between the gallium-interstitial-related deep donors near Ec -0.8 eV and nitrogen-interstitial-related acceptors near Ec -0.9 eV

Original languageEnglish
Article number093715
JournalJournal of Applied Physics
Volume100
Issue number9
DOIs
Publication statusPublished - 2006 Nov 23
Externally publishedYes

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neutrons
interstitials
vapor deposition
vapor phase epitaxy
hydrides
gallium
lattice parameters
fluence
molecular beam epitaxy
reactors
intervals
nitrogen
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Kolin, N. G., Merkurisov, D. I., ... Osinsky, A. V. (2006). Fermi level pinning in heavily neutron-irradiated GaN. Journal of Applied Physics, 100(9), [093715]. https://doi.org/10.1063/1.2361157

Fermi level pinning in heavily neutron-irradiated GaN. / Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Markov, A. V.; Kolin, N. G.; Merkurisov, D. I.; Boiko, V. M.; Shcherbatchev, K. D.; Bublik, V. T.; Voronova, M. I.; Lee, In-Hwan; Lee, C. R.; Pearton, S. J.; Dabirian, A.; Osinsky, A. V.

In: Journal of Applied Physics, Vol. 100, No. 9, 093715, 23.11.2006.

Research output: Contribution to journalArticle

Polyakov, AY, Smirnov, NB, Govorkov, AV, Markov, AV, Kolin, NG, Merkurisov, DI, Boiko, VM, Shcherbatchev, KD, Bublik, VT, Voronova, MI, Lee, I-H, Lee, CR, Pearton, SJ, Dabirian, A & Osinsky, AV 2006, 'Fermi level pinning in heavily neutron-irradiated GaN', Journal of Applied Physics, vol. 100, no. 9, 093715. https://doi.org/10.1063/1.2361157
Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Kolin NG, Merkurisov DI et al. Fermi level pinning in heavily neutron-irradiated GaN. Journal of Applied Physics. 2006 Nov 23;100(9). 093715. https://doi.org/10.1063/1.2361157
Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Markov, A. V. ; Kolin, N. G. ; Merkurisov, D. I. ; Boiko, V. M. ; Shcherbatchev, K. D. ; Bublik, V. T. ; Voronova, M. I. ; Lee, In-Hwan ; Lee, C. R. ; Pearton, S. J. ; Dabirian, A. ; Osinsky, A. V. / Fermi level pinning in heavily neutron-irradiated GaN. In: Journal of Applied Physics. 2006 ; Vol. 100, No. 9.
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AU - Bublik, V. T.

AU - Voronova, M. I.

AU - Lee, In-Hwan

AU - Lee, C. R.

AU - Pearton, S. J.

AU - Dabirian, A.

AU - Osinsky, A. V.

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