Fermi surface distortion induced by interaction between Rashba and Zeeman effects

Won Young Choi, Joonyeon Chang, Hyung Jun Kim, Kyoung Jin Lee, Hyun Cheol Koo

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

To evaluate Fermi surface distortion induced by interaction between Rashba and Zeeman effects, the channel resistance in an InAs quantum well layer is investigated with an in-plane magnetic field transverse to the current direction. In the magnetoresistance curve, the critical point occurs at ∼3.5T, which is approximately half of the independently measured Rashba field. To get an insight into the correlation between the critical point in magnetoresistance curve and the Rashba strength, the channel conductivity is calculated using a two-dimensional free-electron model with relaxation time approximation. The critical point obtained from the model calculation is in agreement with the experiment, suggesting that the observation of critical point can be an alternative method to experimentally determine the Rashba parameter.

Original languageEnglish
Article number17C111
JournalJournal of Applied Physics
Volume117
Issue number17
DOIs
Publication statusPublished - 2015 May 7

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surface distortion
Zeeman effect
Fermi surfaces
critical point
interactions
curves
free electrons
relaxation time
quantum wells
conductivity
approximation
magnetic fields

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Fermi surface distortion induced by interaction between Rashba and Zeeman effects. / Choi, Won Young; Chang, Joonyeon; Kim, Hyung Jun; Lee, Kyoung Jin; Koo, Hyun Cheol.

In: Journal of Applied Physics, Vol. 117, No. 17, 17C111, 07.05.2015.

Research output: Contribution to journalArticle

Choi, Won Young ; Chang, Joonyeon ; Kim, Hyung Jun ; Lee, Kyoung Jin ; Koo, Hyun Cheol. / Fermi surface distortion induced by interaction between Rashba and Zeeman effects. In: Journal of Applied Physics. 2015 ; Vol. 117, No. 17.
@article{d622d1ca451a4c42a005d2a635a1bf3e,
title = "Fermi surface distortion induced by interaction between Rashba and Zeeman effects",
abstract = "To evaluate Fermi surface distortion induced by interaction between Rashba and Zeeman effects, the channel resistance in an InAs quantum well layer is investigated with an in-plane magnetic field transverse to the current direction. In the magnetoresistance curve, the critical point occurs at ∼3.5T, which is approximately half of the independently measured Rashba field. To get an insight into the correlation between the critical point in magnetoresistance curve and the Rashba strength, the channel conductivity is calculated using a two-dimensional free-electron model with relaxation time approximation. The critical point obtained from the model calculation is in agreement with the experiment, suggesting that the observation of critical point can be an alternative method to experimentally determine the Rashba parameter.",
author = "Choi, {Won Young} and Joonyeon Chang and Kim, {Hyung Jun} and Lee, {Kyoung Jin} and Koo, {Hyun Cheol}",
year = "2015",
month = "5",
day = "7",
doi = "10.1063/1.4908147",
language = "English",
volume = "117",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "17",

}

TY - JOUR

T1 - Fermi surface distortion induced by interaction between Rashba and Zeeman effects

AU - Choi, Won Young

AU - Chang, Joonyeon

AU - Kim, Hyung Jun

AU - Lee, Kyoung Jin

AU - Koo, Hyun Cheol

PY - 2015/5/7

Y1 - 2015/5/7

N2 - To evaluate Fermi surface distortion induced by interaction between Rashba and Zeeman effects, the channel resistance in an InAs quantum well layer is investigated with an in-plane magnetic field transverse to the current direction. In the magnetoresistance curve, the critical point occurs at ∼3.5T, which is approximately half of the independently measured Rashba field. To get an insight into the correlation between the critical point in magnetoresistance curve and the Rashba strength, the channel conductivity is calculated using a two-dimensional free-electron model with relaxation time approximation. The critical point obtained from the model calculation is in agreement with the experiment, suggesting that the observation of critical point can be an alternative method to experimentally determine the Rashba parameter.

AB - To evaluate Fermi surface distortion induced by interaction between Rashba and Zeeman effects, the channel resistance in an InAs quantum well layer is investigated with an in-plane magnetic field transverse to the current direction. In the magnetoresistance curve, the critical point occurs at ∼3.5T, which is approximately half of the independently measured Rashba field. To get an insight into the correlation between the critical point in magnetoresistance curve and the Rashba strength, the channel conductivity is calculated using a two-dimensional free-electron model with relaxation time approximation. The critical point obtained from the model calculation is in agreement with the experiment, suggesting that the observation of critical point can be an alternative method to experimentally determine the Rashba parameter.

UR - http://www.scopus.com/inward/record.url?scp=84923677601&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84923677601&partnerID=8YFLogxK

U2 - 10.1063/1.4908147

DO - 10.1063/1.4908147

M3 - Article

AN - SCOPUS:84923677601

VL - 117

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 17

M1 - 17C111

ER -