TY - JOUR
T1 - Ferroelectric and piezoelectric properties of 0.72Pb(Zr 0.47Ti 0.53)O 3-0.28Pb[(Zn 0.45Ni 0.55) 1/3Nb 2/3]O 3 thick films for energy harvesting device application
AU - Jeong, Young Hun
AU - Kim, Kyoung Bum
AU - Lee, Young Jin
AU - Cho, Jeong Ho
AU - Kim, Byoung Ik
AU - Paik, Jong Hoo
AU - Nahm, Sahn
PY - 2012/9/1
Y1 - 2012/9/1
N2 - The Ferroelectric and piezoelectric properties of 0.72Pb(Zr 0.47Ti 0.53)O 3-0.28Pb[(Zn 0.45Ni 0.55) 1/3Nb 2/3]O 3 (PZT-PZNN) piezoelectric thick films were investigated for application to energy harvesting devices. The PZT-PZNN thick films were fabricated by a conventional tape casting process. The sintered PZT-PZNN thick film was highly dense and flat when the annealed temperature was 1100 °C. It exhibited substantial ferroelectric and piezoelectric properties of P r = 20.6 μC/cm 2, d 33 = 370 pC/N, ε T 33/ ε 0 = 1185, and k p = 0.44. Moreover, its d 33 · g 33, which can characterize high energy density material, is as large as approximately 13050 × 10 -15 m 2/N. Therefore, the PZT-PZNN thick film can be a potential piezoelectric material for application to energy harvesting devices.
AB - The Ferroelectric and piezoelectric properties of 0.72Pb(Zr 0.47Ti 0.53)O 3-0.28Pb[(Zn 0.45Ni 0.55) 1/3Nb 2/3]O 3 (PZT-PZNN) piezoelectric thick films were investigated for application to energy harvesting devices. The PZT-PZNN thick films were fabricated by a conventional tape casting process. The sintered PZT-PZNN thick film was highly dense and flat when the annealed temperature was 1100 °C. It exhibited substantial ferroelectric and piezoelectric properties of P r = 20.6 μC/cm 2, d 33 = 370 pC/N, ε T 33/ ε 0 = 1185, and k p = 0.44. Moreover, its d 33 · g 33, which can characterize high energy density material, is as large as approximately 13050 × 10 -15 m 2/N. Therefore, the PZT-PZNN thick film can be a potential piezoelectric material for application to energy harvesting devices.
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U2 - 10.1143/JJAP.51.09MD04
DO - 10.1143/JJAP.51.09MD04
M3 - Article
AN - SCOPUS:84867731206
VL - 51
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 9 PART3
M1 - 09MD04
ER -