Ferroelectric and piezoelectric properties of 0.72Pb(Zr 0.47Ti 0.53)O 3-0.28Pb[(Zn 0.45Ni 0.55) 1/3Nb 2/3]O 3 thick films for energy harvesting device application

Young Hun Jeong; Kyoung Bum Kim; Young Jin Lee; Jeong Ho Cho; Byoung Ik Kim; Jong Hoo Paik; Sahn Nahm

doi:10.1143/JJAP.51.09MD04

Ferroelectric and piezoelectric properties of 0.72Pb(Zr _0.47Ti _0.53)O ₃-0.28Pb[(Zn _0.45Ni _0.55) _1/3Nb _2/3]O ₃ thick films for energy harvesting device application

Young Hun Jeong, Kyoung Bum Kim, Young Jin Lee, Jeong Ho Cho, Byoung Ik Kim, Jong Hoo Paik, Sahn Nahm

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The Ferroelectric and piezoelectric properties of 0.72Pb(Zr _0.47Ti _0.53)O ₃-0.28Pb[(Zn _0.45Ni _0.55) _1/3Nb _2/3]O ₃ (PZT-PZNN) piezoelectric thick films were investigated for application to energy harvesting devices. The PZT-PZNN thick films were fabricated by a conventional tape casting process. The sintered PZT-PZNN thick film was highly dense and flat when the annealed temperature was 1100 °C. It exhibited substantial ferroelectric and piezoelectric properties of P _r = 20.6 μC/cm ², d ₃₃ = 370 pC/N, ε ^T ₃₃/ ε ₀ = 1185, and k _p = 0.44. Moreover, its d ₃₃ · g ₃₃, which can characterize high energy density material, is as large as approximately 13050 × 10 ^-15 m ²/N. Therefore, the PZT-PZNN thick film can be a potential piezoelectric material for application to energy harvesting devices.

Original language	English
Article number	09MD04
Journal	Japanese journal of applied physics
Volume	51
Issue number	9 PART3
DOIs	https://doi.org/10.1143/JJAP.51.09MD04
Publication status	Published - 2012 Sep

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Ferroelectric and piezoelectric properties of 0.72Pb(Zr _0.47Ti _0.53)O ₃-0.28Pb[(Zn _0.45Ni _0.55) _1/3Nb _2/3]O ₃ thick films for energy harvesting device application. / Jeong, Young Hun; Kim, Kyoung Bum; Lee, Young Jin; Cho, Jeong Ho; Kim, Byoung Ik; Paik, Jong Hoo; Nahm, Sahn.

In: Japanese journal of applied physics, Vol. 51, No. 9 PART3, 09MD04, 09.2012.

Research output: Contribution to journal › Article › peer-review

@article{af850e5321384a6390a1c034271adca3,

title = "Ferroelectric and piezoelectric properties of 0.72Pb(Zr 0.47Ti 0.53)O 3-0.28Pb[(Zn 0.45Ni 0.55) 1/3Nb 2/3]O 3 thick films for energy harvesting device application",

abstract = "The Ferroelectric and piezoelectric properties of 0.72Pb(Zr 0.47Ti 0.53)O 3-0.28Pb[(Zn 0.45Ni 0.55) 1/3Nb 2/3]O 3 (PZT-PZNN) piezoelectric thick films were investigated for application to energy harvesting devices. The PZT-PZNN thick films were fabricated by a conventional tape casting process. The sintered PZT-PZNN thick film was highly dense and flat when the annealed temperature was 1100 °C. It exhibited substantial ferroelectric and piezoelectric properties of P r = 20.6 μC/cm 2, d 33 = 370 pC/N, ε T 33/ ε 0 = 1185, and k p = 0.44. Moreover, its d 33 · g 33, which can characterize high energy density material, is as large as approximately 13050 × 10 -15 m 2/N. Therefore, the PZT-PZNN thick film can be a potential piezoelectric material for application to energy harvesting devices.",

author = "Jeong, {Young Hun} and Kim, {Kyoung Bum} and Lee, {Young Jin} and Cho, {Jeong Ho} and Kim, {Byoung Ik} and Paik, {Jong Hoo} and Sahn Nahm",

year = "2012",

month = sep,

doi = "10.1143/JJAP.51.09MD04",

language = "English",

volume = "51",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "9 PART3",

}

TY - JOUR

T1 - Ferroelectric and piezoelectric properties of 0.72Pb(Zr 0.47Ti 0.53)O 3-0.28Pb[(Zn 0.45Ni 0.55) 1/3Nb 2/3]O 3 thick films for energy harvesting device application

AU - Jeong, Young Hun

AU - Kim, Kyoung Bum

AU - Lee, Young Jin

AU - Cho, Jeong Ho

AU - Kim, Byoung Ik

AU - Paik, Jong Hoo

AU - Nahm, Sahn

PY - 2012/9

Y1 - 2012/9

N2 - The Ferroelectric and piezoelectric properties of 0.72Pb(Zr 0.47Ti 0.53)O 3-0.28Pb[(Zn 0.45Ni 0.55) 1/3Nb 2/3]O 3 (PZT-PZNN) piezoelectric thick films were investigated for application to energy harvesting devices. The PZT-PZNN thick films were fabricated by a conventional tape casting process. The sintered PZT-PZNN thick film was highly dense and flat when the annealed temperature was 1100 °C. It exhibited substantial ferroelectric and piezoelectric properties of P r = 20.6 μC/cm 2, d 33 = 370 pC/N, ε T 33/ ε 0 = 1185, and k p = 0.44. Moreover, its d 33 · g 33, which can characterize high energy density material, is as large as approximately 13050 × 10 -15 m 2/N. Therefore, the PZT-PZNN thick film can be a potential piezoelectric material for application to energy harvesting devices.

AB - The Ferroelectric and piezoelectric properties of 0.72Pb(Zr 0.47Ti 0.53)O 3-0.28Pb[(Zn 0.45Ni 0.55) 1/3Nb 2/3]O 3 (PZT-PZNN) piezoelectric thick films were investigated for application to energy harvesting devices. The PZT-PZNN thick films were fabricated by a conventional tape casting process. The sintered PZT-PZNN thick film was highly dense and flat when the annealed temperature was 1100 °C. It exhibited substantial ferroelectric and piezoelectric properties of P r = 20.6 μC/cm 2, d 33 = 370 pC/N, ε T 33/ ε 0 = 1185, and k p = 0.44. Moreover, its d 33 · g 33, which can characterize high energy density material, is as large as approximately 13050 × 10 -15 m 2/N. Therefore, the PZT-PZNN thick film can be a potential piezoelectric material for application to energy harvesting devices.

UR - http://www.scopus.com/inward/record.url?scp=84867731206&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84867731206&partnerID=8YFLogxK

U2 - 10.1143/JJAP.51.09MD04

DO - 10.1143/JJAP.51.09MD04

M3 - Article

AN - SCOPUS:84867731206

VL - 51

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 9 PART3

M1 - 09MD04