Ferroelectric Na 0.5K 0.5NbO 3 thin films by pulsed laser deposition

C. R. Cho, A. Grishin, Byung-Moo Moon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)


Highly c-axis oriented single phase Na 0.5K 0.5NbO 3 (NKN) thin films have been deposited onto polycrystalline Pt 80Ir 20 substrates and SiO 2/Si(001) wafers using pulsed laser ablation of stoichiometric ceramic target. Strong self-assembling of NKN films along the [001] direction has been observed. Properties of NKN/Pt thin film structures have been successfully tailored by oxygen pressure control from the ferroelectric state, characterized by the remnant polarization of 12 μC/cm 2, dielectric constant ε ∼ 520 and tan δ ∼ 0.024 @ 100 kHz, to superparaelectric state with tan δ as low as 0.003 and ε = 210 with very small 1.7% dispersion in the frequency domain 0.4-100 kHz and less than 10% variation in the temperature range 77-415 K. NKN films grown onto SiO 2/Si(001) substrates show quadrupled super-lattice structure along c-axis, loss tan δ less than 0.01, and ε ∼ 110 @ 1 MHz. C-V measurements for Au/NKN(270nm)/SiO 2/Si MFIS-diode structure yield memory window of 3.26 V at the programmable voltage of 8 V.

Original languageEnglish
Title of host publicationIntegrated Ferroelectrics
Publication statusPublished - 2000
Externally publishedYes
Event12th International Symposium on Integrated Ferroelectrics - Aachen, Germany
Duration: 2000 Mar 122000 Mar 15


Other12th International Symposium on Integrated Ferroelectrics


  • Low loss
  • MFIS-diode
  • Preferential orientation
  • Self-assembling

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

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  • Cite this

    Cho, C. R., Grishin, A., & Moon, B-M. (2000). Ferroelectric Na 0.5K 0.5NbO 3 thin films by pulsed laser deposition In Integrated Ferroelectrics (1-4 ed., Vol. 31)