Ferroelectric Na 0.5K 0.5NbO 3 thin films by pulsed laser deposition

C. R. Cho, A. Grishin, Byung-Moo Moon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

Highly c-axis oriented single phase Na 0.5K 0.5NbO 3 (NKN) thin films have been deposited onto polycrystalline Pt 80Ir 20 substrates and SiO 2/Si(001) wafers using pulsed laser ablation of stoichiometric ceramic target. Strong self-assembling of NKN films along the [001] direction has been observed. Properties of NKN/Pt thin film structures have been successfully tailored by oxygen pressure control from the ferroelectric state, characterized by the remnant polarization of 12 μC/cm 2, dielectric constant ε ∼ 520 and tan δ ∼ 0.024 @ 100 kHz, to superparaelectric state with tan δ as low as 0.003 and ε = 210 with very small 1.7% dispersion in the frequency domain 0.4-100 kHz and less than 10% variation in the temperature range 77-415 K. NKN films grown onto SiO 2/Si(001) substrates show quadrupled super-lattice structure along c-axis, loss tan δ less than 0.01, and ε ∼ 110 @ 1 MHz. C-V measurements for Au/NKN(270nm)/SiO 2/Si MFIS-diode structure yield memory window of 3.26 V at the programmable voltage of 8 V.

Original languageEnglish
Title of host publicationIntegrated Ferroelectrics
Volume31
Edition1-4
Publication statusPublished - 2000
Externally publishedYes
Event12th International Symposium on Integrated Ferroelectrics - Aachen, Germany
Duration: 2000 Mar 122000 Mar 15

Other

Other12th International Symposium on Integrated Ferroelectrics
CountryGermany
CityAachen
Period00/3/1200/3/15

Fingerprint

Pulsed laser deposition
Ferroelectric materials
pulsed laser deposition
Thin films
Pressure control
Laser ablation
Substrates
thin films
assembling
Pulsed lasers
laser ablation
pulsed lasers
Diodes
Permittivity
diodes
wafers
ceramics
Polarization
permittivity
Oxygen

Keywords

  • Low loss
  • MFIS-diode
  • Preferential orientation
  • Self-assembling

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

Cite this

Cho, C. R., Grishin, A., & Moon, B-M. (2000). Ferroelectric Na 0.5K 0.5NbO 3 thin films by pulsed laser deposition In Integrated Ferroelectrics (1-4 ed., Vol. 31)

Ferroelectric Na 0.5K 0.5NbO 3 thin films by pulsed laser deposition . / Cho, C. R.; Grishin, A.; Moon, Byung-Moo.

Integrated Ferroelectrics. Vol. 31 1-4. ed. 2000.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Cho, CR, Grishin, A & Moon, B-M 2000, Ferroelectric Na 0.5K 0.5NbO 3 thin films by pulsed laser deposition in Integrated Ferroelectrics. 1-4 edn, vol. 31, 12th International Symposium on Integrated Ferroelectrics, Aachen, Germany, 00/3/12.
Cho CR, Grishin A, Moon B-M. Ferroelectric Na 0.5K 0.5NbO 3 thin films by pulsed laser deposition In Integrated Ferroelectrics. 1-4 ed. Vol. 31. 2000
Cho, C. R. ; Grishin, A. ; Moon, Byung-Moo. / Ferroelectric Na 0.5K 0.5NbO 3 thin films by pulsed laser deposition Integrated Ferroelectrics. Vol. 31 1-4. ed. 2000.
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AB - Highly c-axis oriented single phase Na 0.5K 0.5NbO 3 (NKN) thin films have been deposited onto polycrystalline Pt 80Ir 20 substrates and SiO 2/Si(001) wafers using pulsed laser ablation of stoichiometric ceramic target. Strong self-assembling of NKN films along the [001] direction has been observed. Properties of NKN/Pt thin film structures have been successfully tailored by oxygen pressure control from the ferroelectric state, characterized by the remnant polarization of 12 μC/cm 2, dielectric constant ε ∼ 520 and tan δ ∼ 0.024 @ 100 kHz, to superparaelectric state with tan δ as low as 0.003 and ε = 210 with very small 1.7% dispersion in the frequency domain 0.4-100 kHz and less than 10% variation in the temperature range 77-415 K. NKN films grown onto SiO 2/Si(001) substrates show quadrupled super-lattice structure along c-axis, loss tan δ less than 0.01, and ε ∼ 110 @ 1 MHz. C-V measurements for Au/NKN(270nm)/SiO 2/Si MFIS-diode structure yield memory window of 3.26 V at the programmable voltage of 8 V.

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