Abstract
The well-crystallized and highly (111)-oriented Pb(Zr 0.4Ti 0.6)O 3(PZT) thin films were prepared using sol-gel process. The P-V curves and switching current characteristics of PZT thin films were investigated as a function of annealing temperature. With increasing the annealing temperature from 400°C to 700°C, the P-V hysteresis loop became more rectangular shaped, the remnant and saturated polarizations increased, and the activation field decreased. The remnant polarization (P r) of the film annealed at 400°C and 700°C was 23 μC/cm 2 and 29 μC/cm 2, respectively. The switching current behavior depending on the annealing temperature was successfully observed. The value of activation field (a) decreased from 422 ±27 kV/cm to 339 ±28 kV/cm with increasing the annealing temperature. These ferroelectric properties of highly (111)-oriented PZT films were discussed in terms of the change in the grain size and domain configuration.
| Original language | English |
|---|---|
| Pages (from-to) | 181-190 |
| Number of pages | 10 |
| Journal | Integrated Ferroelectrics |
| Volume | 67 |
| DOIs | |
| Publication status | Published - 2004 Dec 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Control and Systems Engineering
- Ceramics and Composites
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
Ferroelectric properties of highly (111) oriented Pb(Zr 0.4Ti 0.6)O 3 thin films fabricated using sol-gel process. / Hyun, Suk Jung; Noh, Jun Hong; Jong, Sung Park; Kug, Sun Hong; Lee, Jung Kun.
In: Integrated Ferroelectrics, Vol. 67, 01.12.2004, p. 181-190.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Ferroelectric properties of highly (111) oriented Pb(Zr 0.4Ti 0.6)O 3 thin films fabricated using sol-gel process
AU - Hyun, Suk Jung
AU - Noh, Jun Hong
AU - Jong, Sung Park
AU - Kug, Sun Hong
AU - Lee, Jung Kun
PY - 2004/12/1
Y1 - 2004/12/1
N2 - The well-crystallized and highly (111)-oriented Pb(Zr 0.4Ti 0.6)O 3(PZT) thin films were prepared using sol-gel process. The P-V curves and switching current characteristics of PZT thin films were investigated as a function of annealing temperature. With increasing the annealing temperature from 400°C to 700°C, the P-V hysteresis loop became more rectangular shaped, the remnant and saturated polarizations increased, and the activation field decreased. The remnant polarization (P r) of the film annealed at 400°C and 700°C was 23 μC/cm 2 and 29 μC/cm 2, respectively. The switching current behavior depending on the annealing temperature was successfully observed. The value of activation field (a) decreased from 422 ±27 kV/cm to 339 ±28 kV/cm with increasing the annealing temperature. These ferroelectric properties of highly (111)-oriented PZT films were discussed in terms of the change in the grain size and domain configuration.
AB - The well-crystallized and highly (111)-oriented Pb(Zr 0.4Ti 0.6)O 3(PZT) thin films were prepared using sol-gel process. The P-V curves and switching current characteristics of PZT thin films were investigated as a function of annealing temperature. With increasing the annealing temperature from 400°C to 700°C, the P-V hysteresis loop became more rectangular shaped, the remnant and saturated polarizations increased, and the activation field decreased. The remnant polarization (P r) of the film annealed at 400°C and 700°C was 23 μC/cm 2 and 29 μC/cm 2, respectively. The switching current behavior depending on the annealing temperature was successfully observed. The value of activation field (a) decreased from 422 ±27 kV/cm to 339 ±28 kV/cm with increasing the annealing temperature. These ferroelectric properties of highly (111)-oriented PZT films were discussed in terms of the change in the grain size and domain configuration.
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UR - http://www.scopus.com/inward/citedby.url?scp=33751204492&partnerID=8YFLogxK
U2 - 10.1080/10584580490898984
DO - 10.1080/10584580490898984
M3 - Article
AN - SCOPUS:33751204492
VL - 67
SP - 181
EP - 190
JO - Integrated Ferroelectrics
JF - Integrated Ferroelectrics
SN - 1058-4587
ER -