Ferroelectric properties of highly (111) oriented Pb(Zr 0.4Ti 0.6)O 3 thin films fabricated using sol-gel process

Suk Jung Hyun; Hong No Jun; Sung Park Jong; Sun Hong Kug; Jung Kun Lee

doi:10.1080/10584580490898984

Ferroelectric properties of highly (111) oriented Pb(Zr _0.4Ti _0.6)O ₃ thin films fabricated using sol-gel process

Suk Jung Hyun, Hong No Jun, Sung Park Jong, Sun Hong Kug, Jung Kun Lee

Research output: Contribution to journal › Article › peer-review

Abstract

The well-crystallized and highly (111)-oriented Pb(Zr _0.4Ti _0.6)O ₃(PZT) thin films were prepared using sol-gel process. The P-V curves and switching current characteristics of PZT thin films were investigated as a function of annealing temperature. With increasing the annealing temperature from 400°C to 700°C, the P-V hysteresis loop became more rectangular shaped, the remnant and saturated polarizations increased, and the activation field decreased. The remnant polarization (P _r) of the film annealed at 400°C and 700°C was 23 μC/cm ² and 29 μC/cm ², respectively. The switching current behavior depending on the annealing temperature was successfully observed. The value of activation field (a) decreased from 422 ±27 kV/cm to 339 ±28 kV/cm with increasing the annealing temperature. These ferroelectric properties of highly (111)-oriented PZT films were discussed in terms of the change in the grain size and domain configuration.

Original language	English
Pages (from-to)	181-190
Number of pages	10
Journal	Integrated Ferroelectrics
Volume	67
DOIs	https://doi.org/10.1080/10584580490898984
Publication status	Published - 2004
Externally published	Yes

ASJC Scopus subject areas

Control and Systems Engineering
Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Ferroelectric properties of highly (111) oriented Pb(Zr 0.4Ti 0.6)O 3 thin films fabricated using sol-gel process",

abstract = "The well-crystallized and highly (111)-oriented Pb(Zr 0.4Ti 0.6)O 3(PZT) thin films were prepared using sol-gel process. The P-V curves and switching current characteristics of PZT thin films were investigated as a function of annealing temperature. With increasing the annealing temperature from 400°C to 700°C, the P-V hysteresis loop became more rectangular shaped, the remnant and saturated polarizations increased, and the activation field decreased. The remnant polarization (P r) of the film annealed at 400°C and 700°C was 23 μC/cm 2 and 29 μC/cm 2, respectively. The switching current behavior depending on the annealing temperature was successfully observed. The value of activation field (a) decreased from 422 ±27 kV/cm to 339 ±28 kV/cm with increasing the annealing temperature. These ferroelectric properties of highly (111)-oriented PZT films were discussed in terms of the change in the grain size and domain configuration.",

author = "Hyun, {Suk Jung} and Jun, {Hong No} and Jong, {Sung Park} and Kug, {Sun Hong} and Lee, {Jung Kun}",

year = "2004",

doi = "10.1080/10584580490898984",

language = "English",

volume = "67",

pages = "181--190",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

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T1 - Ferroelectric properties of highly (111) oriented Pb(Zr 0.4Ti 0.6)O 3 thin films fabricated using sol-gel process

AU - Hyun, Suk Jung

AU - Jun, Hong No

AU - Jong, Sung Park

AU - Kug, Sun Hong

AU - Lee, Jung Kun

PY - 2004

Y1 - 2004

N2 - The well-crystallized and highly (111)-oriented Pb(Zr 0.4Ti 0.6)O 3(PZT) thin films were prepared using sol-gel process. The P-V curves and switching current characteristics of PZT thin films were investigated as a function of annealing temperature. With increasing the annealing temperature from 400°C to 700°C, the P-V hysteresis loop became more rectangular shaped, the remnant and saturated polarizations increased, and the activation field decreased. The remnant polarization (P r) of the film annealed at 400°C and 700°C was 23 μC/cm 2 and 29 μC/cm 2, respectively. The switching current behavior depending on the annealing temperature was successfully observed. The value of activation field (a) decreased from 422 ±27 kV/cm to 339 ±28 kV/cm with increasing the annealing temperature. These ferroelectric properties of highly (111)-oriented PZT films were discussed in terms of the change in the grain size and domain configuration.

AB - The well-crystallized and highly (111)-oriented Pb(Zr 0.4Ti 0.6)O 3(PZT) thin films were prepared using sol-gel process. The P-V curves and switching current characteristics of PZT thin films were investigated as a function of annealing temperature. With increasing the annealing temperature from 400°C to 700°C, the P-V hysteresis loop became more rectangular shaped, the remnant and saturated polarizations increased, and the activation field decreased. The remnant polarization (P r) of the film annealed at 400°C and 700°C was 23 μC/cm 2 and 29 μC/cm 2, respectively. The switching current behavior depending on the annealing temperature was successfully observed. The value of activation field (a) decreased from 422 ±27 kV/cm to 339 ±28 kV/cm with increasing the annealing temperature. These ferroelectric properties of highly (111)-oriented PZT films were discussed in terms of the change in the grain size and domain configuration.

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JO - Integrated Ferroelectrics

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SN - 1058-4587

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Ferroelectric properties of highly (111) oriented Pb(Zr _0.4Ti _0.6)O ₃ thin films fabricated using sol-gel process

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