Ferroelectric properties of highly (111) oriented Pb(Zr 0.4Ti 0.6)O 3 thin films fabricated using sol-gel process

Suk Jung Hyun; Hong No Jun; Sung Park Jong; Sun Hong Kug; Jung Kun Lee

doi:10.1080/10584580490898984

Ferroelectric properties of highly (111) oriented Pb(Zr _0.4Ti _0.6)O ₃ thin films fabricated using sol-gel process

Suk Jung Hyun, Hong No Jun, Sung Park Jong, Sun Hong Kug, Jung Kun Lee

Research output: Contribution to journal › Article › peer-review

Abstract

The well-crystallized and highly (111)-oriented Pb(Zr _0.4Ti _0.6)O ₃(PZT) thin films were prepared using sol-gel process. The P-V curves and switching current characteristics of PZT thin films were investigated as a function of annealing temperature. With increasing the annealing temperature from 400°C to 700°C, the P-V hysteresis loop became more rectangular shaped, the remnant and saturated polarizations increased, and the activation field decreased. The remnant polarization (P _r) of the film annealed at 400°C and 700°C was 23 μC/cm ² and 29 μC/cm ², respectively. The switching current behavior depending on the annealing temperature was successfully observed. The value of activation field (a) decreased from 422 ±27 kV/cm to 339 ±28 kV/cm with increasing the annealing temperature. These ferroelectric properties of highly (111)-oriented PZT films were discussed in terms of the change in the grain size and domain configuration.

Original language	English
Pages (from-to)	181-190
Number of pages	10
Journal	Integrated Ferroelectrics
Volume	67
DOIs	https://doi.org/10.1080/10584580490898984
Publication status	Published - 2004
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1080/10584580490898984

Fingerprint Dive into the research topics of 'Ferroelectric properties of highly (111) oriented Pb(Zr 0.4Ti 0.6)O 3 thin films fabricated using sol-gel process'. Together they form a unique fingerprint.

Cite this

@article{1abf3712f78448e2b7a475efe45b475c,

title = "Ferroelectric properties of highly (111) oriented Pb(Zr 0.4Ti 0.6)O 3 thin films fabricated using sol-gel process",

abstract = "The well-crystallized and highly (111)-oriented Pb(Zr 0.4Ti 0.6)O 3(PZT) thin films were prepared using sol-gel process. The P-V curves and switching current characteristics of PZT thin films were investigated as a function of annealing temperature. With increasing the annealing temperature from 400°C to 700°C, the P-V hysteresis loop became more rectangular shaped, the remnant and saturated polarizations increased, and the activation field decreased. The remnant polarization (P r) of the film annealed at 400°C and 700°C was 23 μC/cm 2 and 29 μC/cm 2, respectively. The switching current behavior depending on the annealing temperature was successfully observed. The value of activation field (a) decreased from 422 ±27 kV/cm to 339 ±28 kV/cm with increasing the annealing temperature. These ferroelectric properties of highly (111)-oriented PZT films were discussed in terms of the change in the grain size and domain configuration.",

author = "Hyun, {Suk Jung} and Jun, {Hong No} and Jong, {Sung Park} and Kug, {Sun Hong} and Lee, {Jung Kun}",

year = "2004",

doi = "10.1080/10584580490898984",

language = "English",

volume = "67",

pages = "181--190",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

}

TY - JOUR

T1 - Ferroelectric properties of highly (111) oriented Pb(Zr 0.4Ti 0.6)O 3 thin films fabricated using sol-gel process

AU - Hyun, Suk Jung

AU - Jun, Hong No

AU - Jong, Sung Park

AU - Kug, Sun Hong

AU - Lee, Jung Kun

PY - 2004

Y1 - 2004

N2 - The well-crystallized and highly (111)-oriented Pb(Zr 0.4Ti 0.6)O 3(PZT) thin films were prepared using sol-gel process. The P-V curves and switching current characteristics of PZT thin films were investigated as a function of annealing temperature. With increasing the annealing temperature from 400°C to 700°C, the P-V hysteresis loop became more rectangular shaped, the remnant and saturated polarizations increased, and the activation field decreased. The remnant polarization (P r) of the film annealed at 400°C and 700°C was 23 μC/cm 2 and 29 μC/cm 2, respectively. The switching current behavior depending on the annealing temperature was successfully observed. The value of activation field (a) decreased from 422 ±27 kV/cm to 339 ±28 kV/cm with increasing the annealing temperature. These ferroelectric properties of highly (111)-oriented PZT films were discussed in terms of the change in the grain size and domain configuration.

AB - The well-crystallized and highly (111)-oriented Pb(Zr 0.4Ti 0.6)O 3(PZT) thin films were prepared using sol-gel process. The P-V curves and switching current characteristics of PZT thin films were investigated as a function of annealing temperature. With increasing the annealing temperature from 400°C to 700°C, the P-V hysteresis loop became more rectangular shaped, the remnant and saturated polarizations increased, and the activation field decreased. The remnant polarization (P r) of the film annealed at 400°C and 700°C was 23 μC/cm 2 and 29 μC/cm 2, respectively. The switching current behavior depending on the annealing temperature was successfully observed. The value of activation field (a) decreased from 422 ±27 kV/cm to 339 ±28 kV/cm with increasing the annealing temperature. These ferroelectric properties of highly (111)-oriented PZT films were discussed in terms of the change in the grain size and domain configuration.

UR - http://www.scopus.com/inward/record.url?scp=33751204492&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33751204492&partnerID=8YFLogxK

U2 - 10.1080/10584580490898984

DO - 10.1080/10584580490898984

M3 - Article

AN - SCOPUS:33751204492

VL - 67

SP - 181

EP - 190

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

SN - 1058-4587

ER -