Ferroelectric properties of highly (111) oriented Pb(Zr 0.4Ti 0.6)O 3 thin films fabricated using sol-gel process

Suk Jung Hyun, Hong No Jun, Sung Park Jong, Sun Hong Kug, Jung Kun Lee

Research output: Contribution to journalArticle

Abstract

The well-crystallized and highly (111)-oriented Pb(Zr 0.4Ti 0.6)O 3(PZT) thin films were prepared using sol-gel process. The P-V curves and switching current characteristics of PZT thin films were investigated as a function of annealing temperature. With increasing the annealing temperature from 400°C to 700°C, the P-V hysteresis loop became more rectangular shaped, the remnant and saturated polarizations increased, and the activation field decreased. The remnant polarization (P r) of the film annealed at 400°C and 700°C was 23 μC/cm 2 and 29 μC/cm 2, respectively. The switching current behavior depending on the annealing temperature was successfully observed. The value of activation field (a) decreased from 422 ±27 kV/cm to 339 ±28 kV/cm with increasing the annealing temperature. These ferroelectric properties of highly (111)-oriented PZT films were discussed in terms of the change in the grain size and domain configuration.

Original languageEnglish
Pages (from-to)181-190
Number of pages10
JournalIntegrated Ferroelectrics
Volume67
DOIs
Publication statusPublished - 2004
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Ferroelectric properties of highly (111) oriented Pb(Zr <sub>0.4</sub>Ti <sub>0.6</sub>)O <sub>3</sub> thin films fabricated using sol-gel process'. Together they form a unique fingerprint.

  • Cite this