Ferromagnet-Free All-Electric Spin Hall Transistors

Won Young Choi, Hyung Jun Kim, Joonyeon Chang, Suk Hee Han, Adel Abbout, Hamed Ben Mohamed Saidaoui, Aurélien Manchon, Kyoung Jin Lee, Hyun Cheol Koo

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The spin field-effect transistor, an essential building block for spin information processing, shows promise for energy-efficient computing. Despite steady progress, it suffers from a low-output signal because of low spin injection and detection efficiencies. We demonstrate that this low-output obstacle can be overcome by utilizing direct and inverse spin Hall effects for spin injection and detection, respectively, without a ferromagnetic component. The output voltage of our all-electric spin Hall transistor is about two orders of magnitude larger than that of previously reported spin transistors based on ferromagnets or quantum point contacts. Moreover, the symmetry of the spin Hall effect allows all-electric spin Hall transistors to effectively mimic n-type and p-type devices, opening a way of realizing the complementary functionality.

Original languageEnglish
Pages (from-to)7998-8002
Number of pages5
JournalNano Letters
Volume18
Issue number12
DOIs
Publication statusPublished - 2018 Dec 12

Keywords

  • Rashba effect
  • spin Hall effect
  • spin logic device
  • spin precession
  • Spin transistor

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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  • Cite this

    Choi, W. Y., Kim, H. J., Chang, J., Han, S. H., Abbout, A., Saidaoui, H. B. M., Manchon, A., Lee, K. J., & Koo, H. C. (2018). Ferromagnet-Free All-Electric Spin Hall Transistors. Nano Letters, 18(12), 7998-8002. https://doi.org/10.1021/acs.nanolett.8b03998