Ferromagnet-Free All-Electric Spin Hall Transistors

Won Young Choi, Hyung Jun Kim, Joonyeon Chang, Suk Hee Han, Adel Abbout, Hamed Ben Mohamed Saidaoui, Aurélien Manchon, Kyoung Jin Lee, Hyun Cheol Koo

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The spin field-effect transistor, an essential building block for spin information processing, shows promise for energy-efficient computing. Despite steady progress, it suffers from a low-output signal because of low spin injection and detection efficiencies. We demonstrate that this low-output obstacle can be overcome by utilizing direct and inverse spin Hall effects for spin injection and detection, respectively, without a ferromagnetic component. The output voltage of our all-electric spin Hall transistor is about two orders of magnitude larger than that of previously reported spin transistors based on ferromagnets or quantum point contacts. Moreover, the symmetry of the spin Hall effect allows all-electric spin Hall transistors to effectively mimic n-type and p-type devices, opening a way of realizing the complementary functionality.

Original languageEnglish
Pages (from-to)7998-8002
Number of pages5
JournalNano Letters
Volume18
Issue number12
DOIs
Publication statusPublished - 2018 Dec 12

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Spin Hall effect
Transistors
transistors
Point contacts
Field effect transistors
Hall effect
output
Electric potential
injection
field effect transistors
electric potential
symmetry

Keywords

  • Rashba effect
  • spin Hall effect
  • spin logic device
  • spin precession
  • Spin transistor

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Choi, W. Y., Kim, H. J., Chang, J., Han, S. H., Abbout, A., Saidaoui, H. B. M., ... Koo, H. C. (2018). Ferromagnet-Free All-Electric Spin Hall Transistors. Nano Letters, 18(12), 7998-8002. https://doi.org/10.1021/acs.nanolett.8b03998

Ferromagnet-Free All-Electric Spin Hall Transistors. / Choi, Won Young; Kim, Hyung Jun; Chang, Joonyeon; Han, Suk Hee; Abbout, Adel; Saidaoui, Hamed Ben Mohamed; Manchon, Aurélien; Lee, Kyoung Jin; Koo, Hyun Cheol.

In: Nano Letters, Vol. 18, No. 12, 12.12.2018, p. 7998-8002.

Research output: Contribution to journalArticle

Choi, WY, Kim, HJ, Chang, J, Han, SH, Abbout, A, Saidaoui, HBM, Manchon, A, Lee, KJ & Koo, HC 2018, 'Ferromagnet-Free All-Electric Spin Hall Transistors', Nano Letters, vol. 18, no. 12, pp. 7998-8002. https://doi.org/10.1021/acs.nanolett.8b03998
Choi WY, Kim HJ, Chang J, Han SH, Abbout A, Saidaoui HBM et al. Ferromagnet-Free All-Electric Spin Hall Transistors. Nano Letters. 2018 Dec 12;18(12):7998-8002. https://doi.org/10.1021/acs.nanolett.8b03998
Choi, Won Young ; Kim, Hyung Jun ; Chang, Joonyeon ; Han, Suk Hee ; Abbout, Adel ; Saidaoui, Hamed Ben Mohamed ; Manchon, Aurélien ; Lee, Kyoung Jin ; Koo, Hyun Cheol. / Ferromagnet-Free All-Electric Spin Hall Transistors. In: Nano Letters. 2018 ; Vol. 18, No. 12. pp. 7998-8002.
@article{e038ba9b46d74fae9201310372931c15,
title = "Ferromagnet-Free All-Electric Spin Hall Transistors",
abstract = "The spin field-effect transistor, an essential building block for spin information processing, shows promise for energy-efficient computing. Despite steady progress, it suffers from a low-output signal because of low spin injection and detection efficiencies. We demonstrate that this low-output obstacle can be overcome by utilizing direct and inverse spin Hall effects for spin injection and detection, respectively, without a ferromagnetic component. The output voltage of our all-electric spin Hall transistor is about two orders of magnitude larger than that of previously reported spin transistors based on ferromagnets or quantum point contacts. Moreover, the symmetry of the spin Hall effect allows all-electric spin Hall transistors to effectively mimic n-type and p-type devices, opening a way of realizing the complementary functionality.",
keywords = "Rashba effect, spin Hall effect, spin logic device, spin precession, Spin transistor",
author = "Choi, {Won Young} and Kim, {Hyung Jun} and Joonyeon Chang and Han, {Suk Hee} and Adel Abbout and Saidaoui, {Hamed Ben Mohamed} and Aur{\'e}lien Manchon and Lee, {Kyoung Jin} and Koo, {Hyun Cheol}",
year = "2018",
month = "12",
day = "12",
doi = "10.1021/acs.nanolett.8b03998",
language = "English",
volume = "18",
pages = "7998--8002",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "12",

}

TY - JOUR

T1 - Ferromagnet-Free All-Electric Spin Hall Transistors

AU - Choi, Won Young

AU - Kim, Hyung Jun

AU - Chang, Joonyeon

AU - Han, Suk Hee

AU - Abbout, Adel

AU - Saidaoui, Hamed Ben Mohamed

AU - Manchon, Aurélien

AU - Lee, Kyoung Jin

AU - Koo, Hyun Cheol

PY - 2018/12/12

Y1 - 2018/12/12

N2 - The spin field-effect transistor, an essential building block for spin information processing, shows promise for energy-efficient computing. Despite steady progress, it suffers from a low-output signal because of low spin injection and detection efficiencies. We demonstrate that this low-output obstacle can be overcome by utilizing direct and inverse spin Hall effects for spin injection and detection, respectively, without a ferromagnetic component. The output voltage of our all-electric spin Hall transistor is about two orders of magnitude larger than that of previously reported spin transistors based on ferromagnets or quantum point contacts. Moreover, the symmetry of the spin Hall effect allows all-electric spin Hall transistors to effectively mimic n-type and p-type devices, opening a way of realizing the complementary functionality.

AB - The spin field-effect transistor, an essential building block for spin information processing, shows promise for energy-efficient computing. Despite steady progress, it suffers from a low-output signal because of low spin injection and detection efficiencies. We demonstrate that this low-output obstacle can be overcome by utilizing direct and inverse spin Hall effects for spin injection and detection, respectively, without a ferromagnetic component. The output voltage of our all-electric spin Hall transistor is about two orders of magnitude larger than that of previously reported spin transistors based on ferromagnets or quantum point contacts. Moreover, the symmetry of the spin Hall effect allows all-electric spin Hall transistors to effectively mimic n-type and p-type devices, opening a way of realizing the complementary functionality.

KW - Rashba effect

KW - spin Hall effect

KW - spin logic device

KW - spin precession

KW - Spin transistor

UR - http://www.scopus.com/inward/record.url?scp=85058343681&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85058343681&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.8b03998

DO - 10.1021/acs.nanolett.8b03998

M3 - Article

C2 - 30472862

AN - SCOPUS:85058343681

VL - 18

SP - 7998

EP - 8002

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 12

ER -