Ferromagnetism in GaN and SiC doped with transition metals

S. J. Pearton, Y. D. Park, C. R. Abernathy, M. E. Overberg, G. T. Thaler, J. Kim, F. Ren, J. M. Zavada, R. G. Wilson

Research output: Contribution to journalConference article

46 Citations (Scopus)

Abstract

Recent results on achieving ferromagnetism in transition metal-doped GaN, SiC and related materials are discussed. While current generations of semiconductor electronic and photonic devices utilize the charge on electrons and holes in order to perform their specific functionality such as signal processing or light emission, the field of semiconductor spintronics seeks to exploit the spin of charge carriers in new generations of transistors, lasers and integrated magnetic sensors. There is strong potential for new classes of ultra-low power, high-speed memory, logic and photonic devices. The utility of such devices depends on the availability of materials with practical magnetic ordering temperatures and most theories predict that the Curie temperature will be a strong function of bandgap. Here we review the field of wide bandgap dilute magnetic semiconductors, such as GaN, SiC and related materials, exhibiting room temperature ferromagnetism, the origins of the magnetism and its potential applications.

Original languageEnglish
Pages (from-to)493-501
Number of pages9
JournalThin Solid Films
Volume447-448
DOIs
Publication statusPublished - 2004 Jan 30
EventProceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States
Duration: 2002 Apr 282002 May 2

Keywords

  • Ferromagnetism
  • Photonic devices
  • Transition metals

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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  • Cite this

    Pearton, S. J., Park, Y. D., Abernathy, C. R., Overberg, M. E., Thaler, G. T., Kim, J., Ren, F., Zavada, J. M., & Wilson, R. G. (2004). Ferromagnetism in GaN and SiC doped with transition metals. Thin Solid Films, 447-448, 493-501. https://doi.org/10.1016/j.tsf.2003.07.012