Ferromagnetism in GaN and SiC doped with transition metals

S. J. Pearton, Y. D. Park, C. R. Abernathy, M. E. Overberg, G. T. Thaler, Ji Hyun Kim, F. Ren, J. M. Zavada, R. G. Wilson

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

Recent results on achieving ferromagnetism in transition metal-doped GaN, SiC and related materials are discussed. While current generations of semiconductor electronic and photonic devices utilize the charge on electrons and holes in order to perform their specific functionality such as signal processing or light emission, the field of semiconductor spintronics seeks to exploit the spin of charge carriers in new generations of transistors, lasers and integrated magnetic sensors. There is strong potential for new classes of ultra-low power, high-speed memory, logic and photonic devices. The utility of such devices depends on the availability of materials with practical magnetic ordering temperatures and most theories predict that the Curie temperature will be a strong function of bandgap. Here we review the field of wide bandgap dilute magnetic semiconductors, such as GaN, SiC and related materials, exhibiting room temperature ferromagnetism, the origins of the magnetism and its potential applications.

Original languageEnglish
Pages (from-to)493-501
Number of pages9
JournalThin Solid Films
Volume447-448
DOIs
Publication statusPublished - 2004 Jan 30
Externally publishedYes

Fingerprint

Ferromagnetism
ferromagnetism
Transition metals
Photonic devices
transition metals
Energy gap
photonics
Semiconductor materials
Magnetic semiconductors
Magnetic sensors
Magnetoelectronics
Logic devices
Light emission
Magnetism
Curie temperature
Charge carriers
logic
light emission
availability
signal processing

Keywords

  • Ferromagnetism
  • Photonic devices
  • Transition metals

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Pearton, S. J., Park, Y. D., Abernathy, C. R., Overberg, M. E., Thaler, G. T., Kim, J. H., ... Wilson, R. G. (2004). Ferromagnetism in GaN and SiC doped with transition metals. Thin Solid Films, 447-448, 493-501. https://doi.org/10.1016/j.tsf.2003.07.012

Ferromagnetism in GaN and SiC doped with transition metals. / Pearton, S. J.; Park, Y. D.; Abernathy, C. R.; Overberg, M. E.; Thaler, G. T.; Kim, Ji Hyun; Ren, F.; Zavada, J. M.; Wilson, R. G.

In: Thin Solid Films, Vol. 447-448, 30.01.2004, p. 493-501.

Research output: Contribution to journalArticle

Pearton, SJ, Park, YD, Abernathy, CR, Overberg, ME, Thaler, GT, Kim, JH, Ren, F, Zavada, JM & Wilson, RG 2004, 'Ferromagnetism in GaN and SiC doped with transition metals', Thin Solid Films, vol. 447-448, pp. 493-501. https://doi.org/10.1016/j.tsf.2003.07.012
Pearton SJ, Park YD, Abernathy CR, Overberg ME, Thaler GT, Kim JH et al. Ferromagnetism in GaN and SiC doped with transition metals. Thin Solid Films. 2004 Jan 30;447-448:493-501. https://doi.org/10.1016/j.tsf.2003.07.012
Pearton, S. J. ; Park, Y. D. ; Abernathy, C. R. ; Overberg, M. E. ; Thaler, G. T. ; Kim, Ji Hyun ; Ren, F. ; Zavada, J. M. ; Wilson, R. G. / Ferromagnetism in GaN and SiC doped with transition metals. In: Thin Solid Films. 2004 ; Vol. 447-448. pp. 493-501.
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