Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping

Seungpil Ko, Junhong Na, Young Sun Moon, Ute Zschieschang, Rachana Acharya, Hagen Klauk, Gyu-Tae Kim, Marko Burghard, Klaus Kern

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Ultrathin sheets of two-dimensional (2D) materials like transition metal dichalcogenides have attracted strong attention as components of high-performance light-harvesting devices. Here, we report the implementation of Schottky junction-based photovoltaic devices through site-selective surface doping of few-layer WSe2 in lateral contact configuration. Specifically, whereas the drain region is covered by a strong molecular p-type dopant (NDP-9) to achieve an Ohmic contact, the source region is coated with an Al2O3 layer, which causes local n-type doping and correspondingly an increase of the Schottky barrier at the contact. By scanning photocurrent microscopy using green laser light, it could be confirmed that photocurent generation is restricted to the region around the source contact. The local photoinduced charge separation is associated with a photoresponsivity of up to 20 mA W-1 and an external quantum efficiency of up to 1.3%. The demonstrated device concept should be easily transferrable to other van der Waals 2D materials.

Original languageEnglish
Pages (from-to)42912-42918
Number of pages7
JournalACS Applied Materials and Interfaces
Volume9
Issue number49
DOIs
Publication statusPublished - 2017 Dec 13

Fingerprint

Doping (additives)
Methyl Green
Ohmic contacts
Photocurrents
Quantum efficiency
Transition metals
Microscopic examination
Scanning
Lasers

Keywords

  • chemical doping
  • light harvesting
  • photovoltaic
  • Schottky junction
  • tungsten diselenide

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Ko, S., Na, J., Moon, Y. S., Zschieschang, U., Acharya, R., Klauk, H., ... Kern, K. (2017). Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping. ACS Applied Materials and Interfaces, 9(49), 42912-42918. https://doi.org/10.1021/acsami.7b13395

Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping. / Ko, Seungpil; Na, Junhong; Moon, Young Sun; Zschieschang, Ute; Acharya, Rachana; Klauk, Hagen; Kim, Gyu-Tae; Burghard, Marko; Kern, Klaus.

In: ACS Applied Materials and Interfaces, Vol. 9, No. 49, 13.12.2017, p. 42912-42918.

Research output: Contribution to journalArticle

Ko, S, Na, J, Moon, YS, Zschieschang, U, Acharya, R, Klauk, H, Kim, G-T, Burghard, M & Kern, K 2017, 'Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping', ACS Applied Materials and Interfaces, vol. 9, no. 49, pp. 42912-42918. https://doi.org/10.1021/acsami.7b13395
Ko, Seungpil ; Na, Junhong ; Moon, Young Sun ; Zschieschang, Ute ; Acharya, Rachana ; Klauk, Hagen ; Kim, Gyu-Tae ; Burghard, Marko ; Kern, Klaus. / Few-Layer WSe2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping. In: ACS Applied Materials and Interfaces. 2017 ; Vol. 9, No. 49. pp. 42912-42918.
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