Field-controllable exchange bias in epitaxial Fe films grown on GaAs

Seonghoon Choi, Taehee Yoo, S. Khym, Sang Hoon Lee, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report that exchange bias observed in epitaxial Fe films grown on GaAs (001) substrates can be controlled by the direction of the cooling field. The effect is investigated by measuring the shift of field-cooled hysteresis loops toward specific field directions, as revealed by field scans of the planar Hall resistance at 3K. The value of the unidirectional magnetic anisotropy corresponding to such field-controllable exchange is obtained from the angular dependence of the planar Hall effect.

Original languageEnglish
Article number132403
JournalApplied Physics Letters
Volume101
Issue number13
DOIs
Publication statusPublished - 2012 Sep 24

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Hall resistance
Hall effect
hysteresis
cooling
anisotropy
shift

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Field-controllable exchange bias in epitaxial Fe films grown on GaAs. / Choi, Seonghoon; Yoo, Taehee; Khym, S.; Lee, Sang Hoon; Liu, X.; Furdyna, J. K.

In: Applied Physics Letters, Vol. 101, No. 13, 132403, 24.09.2012.

Research output: Contribution to journalArticle

Choi, Seonghoon ; Yoo, Taehee ; Khym, S. ; Lee, Sang Hoon ; Liu, X. ; Furdyna, J. K. / Field-controllable exchange bias in epitaxial Fe films grown on GaAs. In: Applied Physics Letters. 2012 ; Vol. 101, No. 13.
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