Field-controllable exchange bias in epitaxial Fe films grown on GaAs

Seonghoon Choi; Taehee Yoo; S. Khym; Sanghoon Lee; X. Liu; J. K. Furdyna

doi:10.1063/1.4754622

Field-controllable exchange bias in epitaxial Fe films grown on GaAs

Seonghoon Choi, Taehee Yoo, S. Khym, Sanghoon Lee, X. Liu, J. K. Furdyna

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We report that exchange bias observed in epitaxial Fe films grown on GaAs (001) substrates can be controlled by the direction of the cooling field. The effect is investigated by measuring the shift of field-cooled hysteresis loops toward specific field directions, as revealed by field scans of the planar Hall resistance at 3K. The value of the unidirectional magnetic anisotropy corresponding to such field-controllable exchange is obtained from the angular dependence of the planar Hall effect.

Original language	English
Article number	132403
Journal	Applied Physics Letters
Volume	101
Issue number	13
DOIs	https://doi.org/10.1063/1.4754622
Publication status	Published - 2012 Sept 24

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4754622

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title = "Field-controllable exchange bias in epitaxial Fe films grown on GaAs",

abstract = "We report that exchange bias observed in epitaxial Fe films grown on GaAs (001) substrates can be controlled by the direction of the cooling field. The effect is investigated by measuring the shift of field-cooled hysteresis loops toward specific field directions, as revealed by field scans of the planar Hall resistance at 3K. The value of the unidirectional magnetic anisotropy corresponding to such field-controllable exchange is obtained from the angular dependence of the planar Hall effect.",

author = "Seonghoon Choi and Taehee Yoo and S. Khym and Sanghoon Lee and X. Liu and Furdyna, {J. K.}",

note = "Funding Information: This research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology (2012K001244); by the National Research Foundation of Korea (NRF) grant funded by the Government of Korea (MEST) (No. 2010-0025880); and by the National Science Foundation Grant No. DMR10-05851.",

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T1 - Field-controllable exchange bias in epitaxial Fe films grown on GaAs

AU - Choi, Seonghoon

AU - Yoo, Taehee

AU - Khym, S.

AU - Lee, Sanghoon

AU - Liu, X.

AU - Furdyna, J. K.

N1 - Funding Information: This research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology (2012K001244); by the National Research Foundation of Korea (NRF) grant funded by the Government of Korea (MEST) (No. 2010-0025880); and by the National Science Foundation Grant No. DMR10-05851.

PY - 2012/9/24

Y1 - 2012/9/24

N2 - We report that exchange bias observed in epitaxial Fe films grown on GaAs (001) substrates can be controlled by the direction of the cooling field. The effect is investigated by measuring the shift of field-cooled hysteresis loops toward specific field directions, as revealed by field scans of the planar Hall resistance at 3K. The value of the unidirectional magnetic anisotropy corresponding to such field-controllable exchange is obtained from the angular dependence of the planar Hall effect.

AB - We report that exchange bias observed in epitaxial Fe films grown on GaAs (001) substrates can be controlled by the direction of the cooling field. The effect is investigated by measuring the shift of field-cooled hysteresis loops toward specific field directions, as revealed by field scans of the planar Hall resistance at 3K. The value of the unidirectional magnetic anisotropy corresponding to such field-controllable exchange is obtained from the angular dependence of the planar Hall effect.

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U2 - 10.1063/1.4754622

DO - 10.1063/1.4754622

M3 - Article

AN - SCOPUS:84886539881

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 132403

ER -

Field-controllable exchange bias in epitaxial Fe films grown on GaAs

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