Field-effect transistor made of individual V2O5 nanofibers

G. T. Kim, J. Muster, V. Krstic, J. G. Park, Y. W. Park, S. Roth, M. Burghard

Research output: Contribution to journalArticle

143 Citations (Scopus)

Abstract

A field-effect transistor (FET) with a channel length of ∼ 100 nm was constructed from a small number of individual V2O5 fibers of the cross section 1.5nm×10nm. At low temperature, the conductance increases as the gate voltage is changed from negative to positive values, characteristic of a FET with n-type enhancement mode. The carrier mobility, estimated from the low-field regime, is found to increase from 7.7×10-5 cm2/V s at T= 131 K to 9.6×10-3 cm2/V s at T=192 K with an activation energy of Ea=0.18eV. The nonohmic current/voltage dependence at high electric fields was analyzed in the frame of small polaron hopping conduction, yielding a nearest-neighbor hopping distance of ∼ 4 nm.

Original languageEnglish
Pages (from-to)1875-1877
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number14
DOIs
Publication statusPublished - 2000 Apr 3

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Kim, G. T., Muster, J., Krstic, V., Park, J. G., Park, Y. W., Roth, S., & Burghard, M. (2000). Field-effect transistor made of individual V2O5 nanofibers. Applied Physics Letters, 76(14), 1875-1877. https://doi.org/10.1063/1.126197