Abstract
A field-effect transistor (FET) with a channel length of ∼ 100 nm was constructed from a small number of individual V2O5 fibers of the cross section 1.5nm×10nm. At low temperature, the conductance increases as the gate voltage is changed from negative to positive values, characteristic of a FET with n-type enhancement mode. The carrier mobility, estimated from the low-field regime, is found to increase from 7.7×10-5 cm2/V s at T= 131 K to 9.6×10-3 cm2/V s at T=192 K with an activation energy of Ea=0.18eV. The nonohmic current/voltage dependence at high electric fields was analyzed in the frame of small polaron hopping conduction, yielding a nearest-neighbor hopping distance of ∼ 4 nm.
| Original language | English |
|---|---|
| Pages (from-to) | 1875-1877 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 76 |
| Issue number | 14 |
| Publication status | Published - 2000 Apr 3 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Field-effect transistor made of individual V2O5 nanofibers. / Kim, Gyu-Tae; Muster, J.; Krstic, V.; Park, J. G.; Park, Y. W.; Roth, S.; Burghard, M.
In: Applied Physics Letters, Vol. 76, No. 14, 03.04.2000, p. 1875-1877.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Field-effect transistor made of individual V2O5 nanofibers
AU - Kim, Gyu-Tae
AU - Muster, J.
AU - Krstic, V.
AU - Park, J. G.
AU - Park, Y. W.
AU - Roth, S.
AU - Burghard, M.
PY - 2000/4/3
Y1 - 2000/4/3
N2 - A field-effect transistor (FET) with a channel length of ∼ 100 nm was constructed from a small number of individual V2O5 fibers of the cross section 1.5nm×10nm. At low temperature, the conductance increases as the gate voltage is changed from negative to positive values, characteristic of a FET with n-type enhancement mode. The carrier mobility, estimated from the low-field regime, is found to increase from 7.7×10-5 cm2/V s at T= 131 K to 9.6×10-3 cm2/V s at T=192 K with an activation energy of Ea=0.18eV. The nonohmic current/voltage dependence at high electric fields was analyzed in the frame of small polaron hopping conduction, yielding a nearest-neighbor hopping distance of ∼ 4 nm.
AB - A field-effect transistor (FET) with a channel length of ∼ 100 nm was constructed from a small number of individual V2O5 fibers of the cross section 1.5nm×10nm. At low temperature, the conductance increases as the gate voltage is changed from negative to positive values, characteristic of a FET with n-type enhancement mode. The carrier mobility, estimated from the low-field regime, is found to increase from 7.7×10-5 cm2/V s at T= 131 K to 9.6×10-3 cm2/V s at T=192 K with an activation energy of Ea=0.18eV. The nonohmic current/voltage dependence at high electric fields was analyzed in the frame of small polaron hopping conduction, yielding a nearest-neighbor hopping distance of ∼ 4 nm.
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M3 - Article
AN - SCOPUS:0001407345
VL - 76
SP - 1875
EP - 1877
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 14
ER -