Field-effect transistor made of individual V2O5 nanofibers

Gyu-Tae Kim, J. Muster, V. Krstic, J. G. Park, Y. W. Park, S. Roth, M. Burghard

Research output: Contribution to journalArticle

143 Citations (Scopus)

Abstract

A field-effect transistor (FET) with a channel length of ∼ 100 nm was constructed from a small number of individual V2O5 fibers of the cross section 1.5nm×10nm. At low temperature, the conductance increases as the gate voltage is changed from negative to positive values, characteristic of a FET with n-type enhancement mode. The carrier mobility, estimated from the low-field regime, is found to increase from 7.7×10-5 cm2/V s at T= 131 K to 9.6×10-3 cm2/V s at T=192 K with an activation energy of Ea=0.18eV. The nonohmic current/voltage dependence at high electric fields was analyzed in the frame of small polaron hopping conduction, yielding a nearest-neighbor hopping distance of ∼ 4 nm.

Original languageEnglish
Pages (from-to)1875-1877
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number14
Publication statusPublished - 2000 Apr 3
Externally publishedYes

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field effect transistors
electric potential
carrier mobility
activation energy
conduction
fibers
electric fields
augmentation
cross sections

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, G-T., Muster, J., Krstic, V., Park, J. G., Park, Y. W., Roth, S., & Burghard, M. (2000). Field-effect transistor made of individual V2O5 nanofibers. Applied Physics Letters, 76(14), 1875-1877.

Field-effect transistor made of individual V2O5 nanofibers. / Kim, Gyu-Tae; Muster, J.; Krstic, V.; Park, J. G.; Park, Y. W.; Roth, S.; Burghard, M.

In: Applied Physics Letters, Vol. 76, No. 14, 03.04.2000, p. 1875-1877.

Research output: Contribution to journalArticle

Kim, G-T, Muster, J, Krstic, V, Park, JG, Park, YW, Roth, S & Burghard, M 2000, 'Field-effect transistor made of individual V2O5 nanofibers', Applied Physics Letters, vol. 76, no. 14, pp. 1875-1877.
Kim G-T, Muster J, Krstic V, Park JG, Park YW, Roth S et al. Field-effect transistor made of individual V2O5 nanofibers. Applied Physics Letters. 2000 Apr 3;76(14):1875-1877.
Kim, Gyu-Tae ; Muster, J. ; Krstic, V. ; Park, J. G. ; Park, Y. W. ; Roth, S. ; Burghard, M. / Field-effect transistor made of individual V2O5 nanofibers. In: Applied Physics Letters. 2000 ; Vol. 76, No. 14. pp. 1875-1877.
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