Abstract
A field-effect transistor (FET) with a channel length of ∼ 100 nm was constructed from a small number of individual V2O5 fibers of the cross section 1.5nm×10nm. At low temperature, the conductance increases as the gate voltage is changed from negative to positive values, characteristic of a FET with n-type enhancement mode. The carrier mobility, estimated from the low-field regime, is found to increase from 7.7×10-5 cm2/V s at T= 131 K to 9.6×10-3 cm2/V s at T=192 K with an activation energy of Ea=0.18eV. The nonohmic current/voltage dependence at high electric fields was analyzed in the frame of small polaron hopping conduction, yielding a nearest-neighbor hopping distance of ∼ 4 nm.
Original language | English |
---|---|
Pages (from-to) | 1875-1877 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 76 |
Issue number | 14 |
DOIs | |
Publication status | Published - 2000 Apr 3 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)