Field-effect transistor made of individual V2O5 nanofibers

G. T. Kim; J. Muster; V. Krstic; J. G. Park; Y. W. Park; S. Roth; M. Burghard

doi:10.1063/1.126197

Field-effect transistor made of individual V₂O₅ nanofibers

G. T. Kim, J. Muster, V. Krstic, J. G. Park, Y. W. Park, S. Roth, M. Burghard

Research output: Contribution to journal › Article › peer-review

146 Citations (Scopus)

Abstract

A field-effect transistor (FET) with a channel length of ∼ 100 nm was constructed from a small number of individual V₂O₅ fibers of the cross section 1.5nm×10nm. At low temperature, the conductance increases as the gate voltage is changed from negative to positive values, characteristic of a FET with n-type enhancement mode. The carrier mobility, estimated from the low-field regime, is found to increase from 7.7×10^-5 cm²/V s at T= 131 K to 9.6×10^-3 cm²/V s at T=192 K with an activation energy of E_a=0.18eV. The nonohmic current/voltage dependence at high electric fields was analyzed in the frame of small polaron hopping conduction, yielding a nearest-neighbor hopping distance of ∼ 4 nm.

Original language	English
Pages (from-to)	1875-1877
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	14
DOIs	https://doi.org/10.1063/1.126197
Publication status	Published - 2000 Apr 3
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.126197

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title = "Field-effect transistor made of individual V2O5 nanofibers",

abstract = "A field-effect transistor (FET) with a channel length of ∼ 100 nm was constructed from a small number of individual V2O5 fibers of the cross section 1.5nm×10nm. At low temperature, the conductance increases as the gate voltage is changed from negative to positive values, characteristic of a FET with n-type enhancement mode. The carrier mobility, estimated from the low-field regime, is found to increase from 7.7×10-5 cm2/V s at T= 131 K to 9.6×10-3 cm2/V s at T=192 K with an activation energy of Ea=0.18eV. The nonohmic current/voltage dependence at high electric fields was analyzed in the frame of small polaron hopping conduction, yielding a nearest-neighbor hopping distance of ∼ 4 nm.",

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AU - Kim, G. T.

AU - Muster, J.

AU - Krstic, V.

AU - Park, J. G.

AU - Park, Y. W.

AU - Roth, S.

AU - Burghard, M.

PY - 2000/4/3

Y1 - 2000/4/3

N2 - A field-effect transistor (FET) with a channel length of ∼ 100 nm was constructed from a small number of individual V2O5 fibers of the cross section 1.5nm×10nm. At low temperature, the conductance increases as the gate voltage is changed from negative to positive values, characteristic of a FET with n-type enhancement mode. The carrier mobility, estimated from the low-field regime, is found to increase from 7.7×10-5 cm2/V s at T= 131 K to 9.6×10-3 cm2/V s at T=192 K with an activation energy of Ea=0.18eV. The nonohmic current/voltage dependence at high electric fields was analyzed in the frame of small polaron hopping conduction, yielding a nearest-neighbor hopping distance of ∼ 4 nm.

AB - A field-effect transistor (FET) with a channel length of ∼ 100 nm was constructed from a small number of individual V2O5 fibers of the cross section 1.5nm×10nm. At low temperature, the conductance increases as the gate voltage is changed from negative to positive values, characteristic of a FET with n-type enhancement mode. The carrier mobility, estimated from the low-field regime, is found to increase from 7.7×10-5 cm2/V s at T= 131 K to 9.6×10-3 cm2/V s at T=192 K with an activation energy of Ea=0.18eV. The nonohmic current/voltage dependence at high electric fields was analyzed in the frame of small polaron hopping conduction, yielding a nearest-neighbor hopping distance of ∼ 4 nm.

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