Field emission behavior of boron nitride nanotubes

Ki Nam Yun, Sang Heon Lee, Jun Soo Han, Yoon Ho Song, Cheol Jin Lee

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The field emission properties of boron nitride nanotube (BNNT) field emitters according to vacuum pressure were demonstrated. During the short-term emission operation, the field emission behaviors were almost similar, regardless of the vacuum pressure, even though the turn-on electric field of the BNNT field emitter was slightly increased as the vacuum pressure increased. On the other hand, during the long-term emission operation, both the degradation and fluctuations of the emission current of the BNNT field emitters were dramatically increased as the vacuum pressure increased. The degradation of field emission properties of the BNNT emitters according to vacuum pressure is mainly attributed to the ion bombardment effect, rather than the oxidation effect. The field emission behavior under Ar ambient also strongly demonstrates that the degradation and the fluctuation of the emission current are largely dependent on the ion bombardment effect.

Original languageEnglish
Article number085203
JournalNanotechnology
Volume29
Issue number8
DOIs
Publication statusPublished - 2018 Jan 23

Fingerprint

Nanotubes
Boron nitride
Vacuum
Field emission
Pressure
Ion bombardment
Degradation
Ions
Electric fields
boron nitride
Oxidation

Keywords

  • boron nitride nanotubes
  • cold cathode
  • field emission
  • field emitter
  • vacuum condition

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Field emission behavior of boron nitride nanotubes. / Yun, Ki Nam; Lee, Sang Heon; Han, Jun Soo; Song, Yoon Ho; Lee, Cheol Jin.

In: Nanotechnology, Vol. 29, No. 8, 085203, 23.01.2018.

Research output: Contribution to journalArticle

Yun, Ki Nam ; Lee, Sang Heon ; Han, Jun Soo ; Song, Yoon Ho ; Lee, Cheol Jin. / Field emission behavior of boron nitride nanotubes. In: Nanotechnology. 2018 ; Vol. 29, No. 8.
@article{1ab60e1a402f40a2af971c12bcb5ec37,
title = "Field emission behavior of boron nitride nanotubes",
abstract = "The field emission properties of boron nitride nanotube (BNNT) field emitters according to vacuum pressure were demonstrated. During the short-term emission operation, the field emission behaviors were almost similar, regardless of the vacuum pressure, even though the turn-on electric field of the BNNT field emitter was slightly increased as the vacuum pressure increased. On the other hand, during the long-term emission operation, both the degradation and fluctuations of the emission current of the BNNT field emitters were dramatically increased as the vacuum pressure increased. The degradation of field emission properties of the BNNT emitters according to vacuum pressure is mainly attributed to the ion bombardment effect, rather than the oxidation effect. The field emission behavior under Ar ambient also strongly demonstrates that the degradation and the fluctuation of the emission current are largely dependent on the ion bombardment effect.",
keywords = "boron nitride nanotubes, cold cathode, field emission, field emitter, vacuum condition",
author = "Yun, {Ki Nam} and Lee, {Sang Heon} and Han, {Jun Soo} and Song, {Yoon Ho} and Lee, {Cheol Jin}",
year = "2018",
month = "1",
day = "23",
doi = "10.1088/1361-6528/aa9fdb",
language = "English",
volume = "29",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "8",

}

TY - JOUR

T1 - Field emission behavior of boron nitride nanotubes

AU - Yun, Ki Nam

AU - Lee, Sang Heon

AU - Han, Jun Soo

AU - Song, Yoon Ho

AU - Lee, Cheol Jin

PY - 2018/1/23

Y1 - 2018/1/23

N2 - The field emission properties of boron nitride nanotube (BNNT) field emitters according to vacuum pressure were demonstrated. During the short-term emission operation, the field emission behaviors were almost similar, regardless of the vacuum pressure, even though the turn-on electric field of the BNNT field emitter was slightly increased as the vacuum pressure increased. On the other hand, during the long-term emission operation, both the degradation and fluctuations of the emission current of the BNNT field emitters were dramatically increased as the vacuum pressure increased. The degradation of field emission properties of the BNNT emitters according to vacuum pressure is mainly attributed to the ion bombardment effect, rather than the oxidation effect. The field emission behavior under Ar ambient also strongly demonstrates that the degradation and the fluctuation of the emission current are largely dependent on the ion bombardment effect.

AB - The field emission properties of boron nitride nanotube (BNNT) field emitters according to vacuum pressure were demonstrated. During the short-term emission operation, the field emission behaviors were almost similar, regardless of the vacuum pressure, even though the turn-on electric field of the BNNT field emitter was slightly increased as the vacuum pressure increased. On the other hand, during the long-term emission operation, both the degradation and fluctuations of the emission current of the BNNT field emitters were dramatically increased as the vacuum pressure increased. The degradation of field emission properties of the BNNT emitters according to vacuum pressure is mainly attributed to the ion bombardment effect, rather than the oxidation effect. The field emission behavior under Ar ambient also strongly demonstrates that the degradation and the fluctuation of the emission current are largely dependent on the ion bombardment effect.

KW - boron nitride nanotubes

KW - cold cathode

KW - field emission

KW - field emitter

KW - vacuum condition

UR - http://www.scopus.com/inward/record.url?scp=85040971179&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85040971179&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/aa9fdb

DO - 10.1088/1361-6528/aa9fdb

M3 - Article

VL - 29

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 8

M1 - 085203

ER -