Field emission characteristics of cesiated amorphous carbon films by negative carbon ion

Dong Won Han, Yong Hwan Kim, Dong Jun Choi, Eung Joon Chi, Wooyoung Yoon, Hong Koo Baik

Research output: Contribution to journalArticle


Amorphous carbon (a-C) films and cesiated a-C films were synthesized on silicon substrate by Cs ion gun sputter deposition system (Cs IGSDS). The properties of a-C film were analyzed by X-ray photoelectron spectroscopy, Raman spectroscopy, and atomic force microscopy, As the negative carbon ion energy increased, relative sp3 ratio in the a-C film increased, and surface roughness decreased. The field emission characteristics of the a-C films as a function of negative carbon ion energy were examined by diode type I-V measurement at ultra high vacuum system. From I-V measurements, the threshold voltage increased with the increase of negative carbon ion energy, and the range from 11 to 16 V/μm was obtained. To investigate the Cs effect, cesiated a-C films were prepared by Cs+ ion and C- ion co-deposition and field emission characteristics of the cesiated a-C films were observed, too. Compared to non-cesiated a-C films, the threshold voltage is decreased by the Cs co-deposition and the value was about 6 V/μm. In this study, we investigate that the relation between carbon ion energy and field emission, and the effect of Cs in the a-C films were examined.

Original languageEnglish
Pages (from-to)199-204
Number of pages6
JournalThin Solid Films
Publication statusPublished - 1999 Nov 1
Externally publishedYes

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Fingerprint Dive into the research topics of 'Field emission characteristics of cesiated amorphous carbon films by negative carbon ion'. Together they form a unique fingerprint.

  • Cite this