Field emission from Ni-disilicide nanorods formed by using implantation of Ni in Si coupled with laser annealing

Young Woo Ok, Tae Yeon Seong, Chel Jong Choi, K. N. Tu

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

We report on the formation of Ni-disilicide (Ni Si2) nanorods using Ni and Si implantation combined with a laser annealing process. We found that Ni Si2 nanorods are formed when the as-implanted Si samples are laser annealed at the energy density of 700 mJ cm2. Based on the Fowler-Nordheim theory, field emission behavior of the Ni Si2 nanorod samples has been characterized. The turn-on field and a field enhancement factor were measured to be 7.6 Vμm and about 630, respectively. A possible mechanism is given to describe how the Ni Si2 nanorods embedded in crystallized Si are formed during the laser annealing.

Original languageEnglish
Article number043106
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume88
Issue number4
DOIs
Publication statusPublished - 2006 Feb 6

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laser annealing
nanorods
field emission
implantation
flux density
augmentation
lasers

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Field emission from Ni-disilicide nanorods formed by using implantation of Ni in Si coupled with laser annealing. / Ok, Young Woo; Seong, Tae Yeon; Choi, Chel Jong; Tu, K. N.

In: Applied Physics Letters, Vol. 88, No. 4, 043106, 06.02.2006, p. 1-3.

Research output: Contribution to journalArticle

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