Field emission from well-aligned zinc oxide nanowires grown at low temperature

C. J. Lee, T. J. Lee, S. C. Lyu, Y. Zhang, H. Ruh, H. J. Lee

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1125 Citations (Scopus)

Abstract

Field electron emission from vertically well-aligned zinc oxide (ZnO) nanowires, which were grown by the vapor deposition method at a low temperature of 550°C, was investigated. The high-purity ZnO nanowires showed a single crystalline wurtzite structure. The turn-on voltage for the ZnO nanowires was found to be about 6.0 V/μm at current density of 0.1μA/cm2. The emission current density from the ZnO nanowires reached 1mA/cm2 at a bias field of 11.0 V/μm, which could give sufficient brightness as a field emitter in a flat panel display. Therefore, the well-aligned ZnO nanowires grown at such low temperature can promise the application of a glass-sealed flat panel display in a near future.

Original languageEnglish
Pages (from-to)3648-3650
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number19
DOIs
Publication statusPublished - 2002 Nov 4
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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