Field emission from well-aligned zinc oxide nanowires grown at low temperature

Cheol Jin Lee, T. J. Lee, S. C. Lyu, Y. Zhang, H. Ruh, H. J. Lee

Research output: Contribution to journalArticle

1109 Citations (Scopus)

Abstract

Field electron emission from vertically well-aligned zinc oxide (ZnO) nanowires, which were grown by the vapor deposition method at a low temperature of 550°C, was investigated. The high-purity ZnO nanowires showed a single crystalline wurtzite structure. The turn-on voltage for the ZnO nanowires was found to be about 6.0 V/μm at current density of 0.1μA/cm2. The emission current density from the ZnO nanowires reached 1mA/cm2 at a bias field of 11.0 V/μm, which could give sufficient brightness as a field emitter in a flat panel display. Therefore, the well-aligned ZnO nanowires grown at such low temperature can promise the application of a glass-sealed flat panel display in a near future.

Original languageEnglish
Pages (from-to)3648-3650
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number19
DOIs
Publication statusPublished - 2002 Nov 4
Externally publishedYes

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zinc oxides
field emission
nanowires
flat panel displays
current density
wurtzite
electron emission
brightness
purity
emitters
vapor deposition
glass
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Field emission from well-aligned zinc oxide nanowires grown at low temperature. / Lee, Cheol Jin; Lee, T. J.; Lyu, S. C.; Zhang, Y.; Ruh, H.; Lee, H. J.

In: Applied Physics Letters, Vol. 81, No. 19, 04.11.2002, p. 3648-3650.

Research output: Contribution to journalArticle

Lee, Cheol Jin ; Lee, T. J. ; Lyu, S. C. ; Zhang, Y. ; Ruh, H. ; Lee, H. J. / Field emission from well-aligned zinc oxide nanowires grown at low temperature. In: Applied Physics Letters. 2002 ; Vol. 81, No. 19. pp. 3648-3650.
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