Field emission performance of boron nitride nanotube emitters according to vacuum pressure

Ki Nam Yun, Jin Woo Jeong, Jun Tae Kang, Sora Park, Jae Woo Kim, Yoon Ho Song, Jun Soo Han, Cheol Jin Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Field emission performance of boron nitride nanotube (BNNT) fabricated by simple filtration-transfer method, were evaluated according to vacuum pressure to estimate its potential use for robust electron sources. Even though there is little change in the current density-electric field characteristics, the stability test for a relatively long time shows somewhat large degradation at a vacuum pressure of over 10-5 Torr. To investigate a key factor of the degradation, we changed the vacuum ambient from air to argon. Under argon ambient condition, the current degradation and fluctuation rates were almost the same as those measured under air ambient at a vacuum pressure of 10-5 Torr. Consequently, ion bombardment dominantly induced the current degradation of the BNNT field emitters rather than oxidation effect.

Original languageEnglish
Title of host publication2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538657171
DOIs
Publication statusPublished - 2018 Nov 1
Event31st International Vacuum Nanoelectronics Conference, IVNC 2018 - Kyoto, Japan
Duration: 2018 Jul 92018 Jul 13

Other

Other31st International Vacuum Nanoelectronics Conference, IVNC 2018
CountryJapan
CityKyoto
Period18/7/918/7/13

Keywords

  • Boron nitride nanotube
  • cold cathode
  • field emitter
  • film emitter

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Yun, K. N., Jeong, J. W., Kang, J. T., Park, S., Kim, J. W., Song, Y. H., Han, J. S., & Lee, C. J. (2018). Field emission performance of boron nitride nanotube emitters according to vacuum pressure. In 2018 31st International Vacuum Nanoelectronics Conference, IVNC 2018 [8520167] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IVNC.2018.8520167