Field emission properties from boron nitride nanotube field emitters

Ki Nam Yun; Dong Hoon Shin; Guillaume Leti; Sang Heon Lee; Cheol Jin Lee; Yoon Ho Song; Luhua Li; Ying Chen

doi:10.1109/IVNC.2015.7225549

Field emission properties from boron nitride nanotube field emitters

Ki Nam Yun, Dong Hoon Shin, Guillaume Leti, Sang Heon Lee, Cheol Jin Lee, Yoon Ho Song, Luhua Li, Ying Chen

School of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Boron nitride nanotubes (BNNTs) have been studied as a field emission material due to their unique and excellent properties such as high oxidation resistance and negative electron affinity. However, field emission properties of BNNT field emitters were rarely reported until now because it is difficult to synthesize high purity BNNTs and fabricate stable BNNT field emitters. Here, we report high field emission properties from BNNT field emitters fabricated on a tungsten rod.

Original language	English
Title of host publication	IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	108-109
Number of pages	2
ISBN (Print)	9781467393577
DOIs	https://doi.org/10.1109/IVNC.2015.7225549
Publication status	Published - 2015 Aug 26
Event	28th International Vacuum Nanoelectronics Conference, IVNC 2015 - Guangzhou, China Duration: 2015 Jul 13 → 2015 Jul 17

Other

Other	28th International Vacuum Nanoelectronics Conference, IVNC 2015
Country	China
City	Guangzhou
Period	15/7/13 → 15/7/17

Keywords

Boron nitride nanotubes
Field emission

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/IVNC.2015.7225549

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Cite this

Yun, K. N., Shin, D. H., Leti, G., Lee, S. H., Lee, C. J., Song, Y. H., Li, L., & Chen, Y. (2015). Field emission properties from boron nitride nanotube field emitters. In IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference (pp. 108-109). [7225549] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IVNC.2015.7225549

Field emission properties from boron nitride nanotube field emitters. / Yun, Ki Nam; Shin, Dong Hoon; Leti, Guillaume; Lee, Sang Heon; Lee, Cheol Jin; Song, Yoon Ho; Li, Luhua; Chen, Ying.

IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference. Institute of Electrical and Electronics Engineers Inc., 2015. p. 108-109 7225549.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yun, KN, Shin, DH, Leti, G, Lee, SH, Lee, CJ, Song, YH, Li, L & Chen, Y 2015, Field emission properties from boron nitride nanotube field emitters. in IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference., 7225549, Institute of Electrical and Electronics Engineers Inc., pp. 108-109, 28th International Vacuum Nanoelectronics Conference, IVNC 2015, Guangzhou, China, 15/7/13. https://doi.org/10.1109/IVNC.2015.7225549

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abstract = "Boron nitride nanotubes (BNNTs) have been studied as a field emission material due to their unique and excellent properties such as high oxidation resistance and negative electron affinity. However, field emission properties of BNNT field emitters were rarely reported until now because it is difficult to synthesize high purity BNNTs and fabricate stable BNNT field emitters. Here, we report high field emission properties from BNNT field emitters fabricated on a tungsten rod.",

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