Field emission properties from boron nitride nanotube field emitters

Ki Nam Yun, Dong Hoon Shin, Guillaume Leti, Sang Heon Lee, Cheol Jin Lee, Yoon Ho Song, Luhua Li, Ying Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Boron nitride nanotubes (BNNTs) have been studied as a field emission material due to their unique and excellent properties such as high oxidation resistance and negative electron affinity. However, field emission properties of BNNT field emitters were rarely reported until now because it is difficult to synthesize high purity BNNTs and fabricate stable BNNT field emitters. Here, we report high field emission properties from BNNT field emitters fabricated on a tungsten rod.

Original languageEnglish
Title of host publicationIVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages108-109
Number of pages2
ISBN (Print)9781467393577
DOIs
Publication statusPublished - 2015 Aug 26
Event28th International Vacuum Nanoelectronics Conference, IVNC 2015 - Guangzhou, China
Duration: 2015 Jul 132015 Jul 17

Other

Other28th International Vacuum Nanoelectronics Conference, IVNC 2015
CountryChina
CityGuangzhou
Period15/7/1315/7/17

Fingerprint

Boron nitride
Field emission
Nanotubes
Electron affinity
Oxidation resistance
Tungsten

Keywords

  • Boron nitride nanotubes
  • Field emission

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Yun, K. N., Shin, D. H., Leti, G., Lee, S. H., Lee, C. J., Song, Y. H., ... Chen, Y. (2015). Field emission properties from boron nitride nanotube field emitters. In IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference (pp. 108-109). [7225549] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IVNC.2015.7225549

Field emission properties from boron nitride nanotube field emitters. / Yun, Ki Nam; Shin, Dong Hoon; Leti, Guillaume; Lee, Sang Heon; Lee, Cheol Jin; Song, Yoon Ho; Li, Luhua; Chen, Ying.

IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference. Institute of Electrical and Electronics Engineers Inc., 2015. p. 108-109 7225549.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yun, KN, Shin, DH, Leti, G, Lee, SH, Lee, CJ, Song, YH, Li, L & Chen, Y 2015, Field emission properties from boron nitride nanotube field emitters. in IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference., 7225549, Institute of Electrical and Electronics Engineers Inc., pp. 108-109, 28th International Vacuum Nanoelectronics Conference, IVNC 2015, Guangzhou, China, 15/7/13. https://doi.org/10.1109/IVNC.2015.7225549
Yun KN, Shin DH, Leti G, Lee SH, Lee CJ, Song YH et al. Field emission properties from boron nitride nanotube field emitters. In IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference. Institute of Electrical and Electronics Engineers Inc. 2015. p. 108-109. 7225549 https://doi.org/10.1109/IVNC.2015.7225549
Yun, Ki Nam ; Shin, Dong Hoon ; Leti, Guillaume ; Lee, Sang Heon ; Lee, Cheol Jin ; Song, Yoon Ho ; Li, Luhua ; Chen, Ying. / Field emission properties from boron nitride nanotube field emitters. IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 108-109
@inproceedings{c3b98248711f4bbfb9c2f7d4a4c1d6f5,
title = "Field emission properties from boron nitride nanotube field emitters",
abstract = "Boron nitride nanotubes (BNNTs) have been studied as a field emission material due to their unique and excellent properties such as high oxidation resistance and negative electron affinity. However, field emission properties of BNNT field emitters were rarely reported until now because it is difficult to synthesize high purity BNNTs and fabricate stable BNNT field emitters. Here, we report high field emission properties from BNNT field emitters fabricated on a tungsten rod.",
keywords = "Boron nitride nanotubes, Field emission",
author = "Yun, {Ki Nam} and Shin, {Dong Hoon} and Guillaume Leti and Lee, {Sang Heon} and Lee, {Cheol Jin} and Song, {Yoon Ho} and Luhua Li and Ying Chen",
year = "2015",
month = "8",
day = "26",
doi = "10.1109/IVNC.2015.7225549",
language = "English",
isbn = "9781467393577",
pages = "108--109",
booktitle = "IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Field emission properties from boron nitride nanotube field emitters

AU - Yun, Ki Nam

AU - Shin, Dong Hoon

AU - Leti, Guillaume

AU - Lee, Sang Heon

AU - Lee, Cheol Jin

AU - Song, Yoon Ho

AU - Li, Luhua

AU - Chen, Ying

PY - 2015/8/26

Y1 - 2015/8/26

N2 - Boron nitride nanotubes (BNNTs) have been studied as a field emission material due to their unique and excellent properties such as high oxidation resistance and negative electron affinity. However, field emission properties of BNNT field emitters were rarely reported until now because it is difficult to synthesize high purity BNNTs and fabricate stable BNNT field emitters. Here, we report high field emission properties from BNNT field emitters fabricated on a tungsten rod.

AB - Boron nitride nanotubes (BNNTs) have been studied as a field emission material due to their unique and excellent properties such as high oxidation resistance and negative electron affinity. However, field emission properties of BNNT field emitters were rarely reported until now because it is difficult to synthesize high purity BNNTs and fabricate stable BNNT field emitters. Here, we report high field emission properties from BNNT field emitters fabricated on a tungsten rod.

KW - Boron nitride nanotubes

KW - Field emission

UR - http://www.scopus.com/inward/record.url?scp=84954170483&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84954170483&partnerID=8YFLogxK

U2 - 10.1109/IVNC.2015.7225549

DO - 10.1109/IVNC.2015.7225549

M3 - Conference contribution

AN - SCOPUS:84954170483

SN - 9781467393577

SP - 108

EP - 109

BT - IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference

PB - Institute of Electrical and Electronics Engineers Inc.

ER -