Abstract
Boron nitride nanotubes (BNNTs) have been studied as a field emission material due to their unique and excellent properties such as high oxidation resistance and negative electron affinity. However, field emission properties of BNNT field emitters were rarely reported until now because it is difficult to synthesize high purity BNNTs and fabricate stable BNNT field emitters. Here, we report high field emission properties from BNNT field emitters fabricated on a tungsten rod.
| Original language | English |
|---|---|
| Title of host publication | IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 108-109 |
| Number of pages | 2 |
| ISBN (Print) | 9781467393577 |
| DOIs | |
| Publication status | Published - 2015 Aug 26 |
| Event | 28th International Vacuum Nanoelectronics Conference, IVNC 2015 - Guangzhou, China Duration: 2015 Jul 13 → 2015 Jul 17 |
Other
| Other | 28th International Vacuum Nanoelectronics Conference, IVNC 2015 |
|---|---|
| Country | China |
| City | Guangzhou |
| Period | 15/7/13 → 15/7/17 |
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Keywords
- Boron nitride nanotubes
- Field emission
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Field emission properties from boron nitride nanotube field emitters. / Yun, Ki Nam; Shin, Dong Hoon; Leti, Guillaume; Lee, Sang Heon; Lee, Cheol Jin; Song, Yoon Ho; Li, Luhua; Chen, Ying.
IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference. Institute of Electrical and Electronics Engineers Inc., 2015. p. 108-109 7225549.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Field emission properties from boron nitride nanotube field emitters
AU - Yun, Ki Nam
AU - Shin, Dong Hoon
AU - Leti, Guillaume
AU - Lee, Sang Heon
AU - Lee, Cheol Jin
AU - Song, Yoon Ho
AU - Li, Luhua
AU - Chen, Ying
PY - 2015/8/26
Y1 - 2015/8/26
N2 - Boron nitride nanotubes (BNNTs) have been studied as a field emission material due to their unique and excellent properties such as high oxidation resistance and negative electron affinity. However, field emission properties of BNNT field emitters were rarely reported until now because it is difficult to synthesize high purity BNNTs and fabricate stable BNNT field emitters. Here, we report high field emission properties from BNNT field emitters fabricated on a tungsten rod.
AB - Boron nitride nanotubes (BNNTs) have been studied as a field emission material due to their unique and excellent properties such as high oxidation resistance and negative electron affinity. However, field emission properties of BNNT field emitters were rarely reported until now because it is difficult to synthesize high purity BNNTs and fabricate stable BNNT field emitters. Here, we report high field emission properties from BNNT field emitters fabricated on a tungsten rod.
KW - Boron nitride nanotubes
KW - Field emission
UR - http://www.scopus.com/inward/record.url?scp=84954170483&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84954170483&partnerID=8YFLogxK
U2 - 10.1109/IVNC.2015.7225549
DO - 10.1109/IVNC.2015.7225549
M3 - Conference contribution
AN - SCOPUS:84954170483
SN - 9781467393577
SP - 108
EP - 109
BT - IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference
PB - Institute of Electrical and Electronics Engineers Inc.
ER -