Abstract
Boron nitride nanotubes (BNNTs) have been studied as a field emission material due to their unique and excellent properties such as high oxidation resistance and negative electron affinity. However, field emission properties of BNNT field emitters were rarely reported until now because it is difficult to synthesize high purity BNNTs and fabricate stable BNNT field emitters. Here, we report high field emission properties from BNNT field emitters fabricated on a tungsten rod.
| Original language | English |
|---|---|
| Title of host publication | IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 108-109 |
| Number of pages | 2 |
| ISBN (Print) | 9781467393577 |
| DOIs | |
| Publication status | Published - 2015 Aug 26 |
| Event | 28th International Vacuum Nanoelectronics Conference, IVNC 2015 - Guangzhou, China Duration: 2015 Jul 13 → 2015 Jul 17 |
Other
| Other | 28th International Vacuum Nanoelectronics Conference, IVNC 2015 |
|---|---|
| Country | China |
| City | Guangzhou |
| Period | 15/7/13 → 15/7/17 |
Keywords
- Boron nitride nanotubes
- Field emission
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Cite this
Yun, K. N., Shin, D. H., Leti, G., Lee, S. H., Lee, C. J., Song, Y. H., Li, L., & Chen, Y. (2015). Field emission properties from boron nitride nanotube field emitters. In IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference (pp. 108-109). [7225549] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IVNC.2015.7225549