Field emission properties from boron nitride nanotube field emitters

Ki Nam Yun, Dong Hoon Shin, Guillaume Leti, Sang Heon Lee, Cheol Jin Lee, Yoon Ho Song, Luhua Li, Ying Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Boron nitride nanotubes (BNNTs) have been studied as a field emission material due to their unique and excellent properties such as high oxidation resistance and negative electron affinity. However, field emission properties of BNNT field emitters were rarely reported until now because it is difficult to synthesize high purity BNNTs and fabricate stable BNNT field emitters. Here, we report high field emission properties from BNNT field emitters fabricated on a tungsten rod.

Original languageEnglish
Title of host publicationIVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages108-109
Number of pages2
ISBN (Print)9781467393577
DOIs
Publication statusPublished - 2015 Aug 26
Event28th International Vacuum Nanoelectronics Conference, IVNC 2015 - Guangzhou, China
Duration: 2015 Jul 132015 Jul 17

Other

Other28th International Vacuum Nanoelectronics Conference, IVNC 2015
CountryChina
CityGuangzhou
Period15/7/1315/7/17

Keywords

  • Boron nitride nanotubes
  • Field emission

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Yun, K. N., Shin, D. H., Leti, G., Lee, S. H., Lee, C. J., Song, Y. H., Li, L., & Chen, Y. (2015). Field emission properties from boron nitride nanotube field emitters. In IVNC 2015 - Technical Digest: 28th International Vacuum Nanoelectronics Conference (pp. 108-109). [7225549] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IVNC.2015.7225549